公开(公告)号：US11316018B2

公开(公告)日：2022-04-26

申请号：US16497714

申请日：2018-03-07

申请人： AIR WATER INC.

发明人： Mitsuhisa Narukawa ,  Sumito Ouchi ,  Hiroki Suzuki ,  Keisuke Kawamura

IPC分类号： H01L29/267 ,  H01L21/02 ,  H01L29/16 ,  H01L29/20 ,  H01L29/778

摘要： A compound semiconductor substrate includes a SiC (silicon carbide) layer, a AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a GaN (gallium nitride) layer as an electron transition layer formed on the composite layer, and an Al nitride semiconductor layer as a barrier layer formed on the GaN layer. The composite layer includes C—GaN layers stacked in a vertical direction, and an AlN layer formed between the C—GaN layers.

公开(公告)号：US20200020778A1

公开(公告)日：2020-01-16

申请号：US16497714

申请日：2018-03-07

申请人： AIR WATER INC.

发明人： Mitsuhisa Narukawa ,  Sumito OUCHI ,  Hiroki Suzuki ,  Keisuke Kawamura

IPC分类号： H01L29/267 ,  H01L21/02

摘要： A compound semiconductor substrate includes a SiC (silicon carbide) layer, a AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a GaN (gallium nitride) layer as an electron transition layer formed on the composite layer, and an Al nitride semiconductor layer as a barrier layer formed on the GaN layer. The composite layer includes C—GaN layers stacked in a vertical direction, and an AlN layer formed between the C—GaN layers.

公开(公告)号：US10354864B2

公开(公告)日：2019-07-16

申请号：US15761841

申请日：2016-10-17

申请人： AIR WATER INC.

发明人： Mitsuhisa Narukawa ,  Akira Fukazawa ,  Hiroki Suzuki ,  Keisuke Kawamura

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L21/02 ,  C23C16/34 ,  H01L29/778 ,  H01L29/812 ,  H01L33/32 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

摘要： A compound semiconductor substrate having a desired quality is provided.A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.

公开(公告)号：US11476115B2

公开(公告)日：2022-10-18

申请号：US16461173

申请日：2017-11-10

申请人： AIR WATER INC.

发明人： Mitsuhisa Narukawa ,  Hiroki Suzuki ,  Sumito Ouchi

IPC分类号： H01L21/02 ,  C23C16/34 ,  C30B25/18 ,  C30B29/38 ,  H01L29/16 ,  H01L29/20 ,  H01L29/205 ,  H01L29/267 ,  H01L29/778 ,  H01L29/812

摘要： A method for manufacturing a compound semiconductor substrate comprises: a step to form an SiC (silicon carbide) layer on a Si (silicon) substrate, a step to form a LT (Low Temperature)-AlN (aluminum nitride) layer with a thickness of 12 nanometers or more and 100 nanometers or less on the SiC layer at 700 degrees Celsius or more and 1000 degrees Celsius or less, a step to form a HT (High Temperature)-AlN layer on the LT-AlN layer at a temperature higher than the temperature at which the LT-AlN layer was formed, a step to form an Al (aluminum) nitride semiconductor layer on the HT-AlN layer, a step to form a GaN (gallium nitride) layer on the Al nitride semiconductor layer, and a step to form an Al nitride semiconductor layer on the GaN layer.

公开(公告)号：US10186421B2

公开(公告)日：2019-01-22

申请号：US15556531

申请日：2016-01-14

申请人： AIR WATER INC.

发明人： Akira Fukazawa ,  Mitsuhisa Narukawa ,  Keisuke Kawamura

IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L29/812 ,  H01L29/267 ,  H01L29/45 ,  H01L29/47

摘要： A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.

公开(公告)号：US20180277363A1

公开(公告)日：2018-09-27

申请号：US15761841

申请日：2016-10-17

申请人： AIR WATER INC.

发明人： Mitsuhisa Narukawa ,  Akira Fukazawa ,  Hiroki Suzuki ,  Keisuke Kawamura

IPC分类号： H01L21/02 ,  H01L29/205 ,  H01L29/10 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

CPC分类号： H01L21/02447 ,  C23C16/34 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66431 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/812 ,  H01L33/32

摘要： A compound semiconductor substrate having a desired quality is provided.A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.

公开(公告)号：US20190279864A1

公开(公告)日：2019-09-12

申请号：US16461173

申请日：2017-11-10

申请人： AIR WATER INC.

发明人： Mitsuhisa Narukawa ,  Hiroki Suzuki ,  Sumito Ouchi

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/16 ,  H01L29/267 ,  C30B29/38 ,  C30B25/18 ,  C23C16/34

摘要： A method for manufacturing a compound semiconductor substrate comprises: a step to form an SiC (silicon carbide) layer on a Si (silicon) substrate, a step to form a LT (Low Temperature)-AlN (aluminum nitride) layer with a thickness of 12 nanometers or more and 100 nanometers or less on the SiC layer at 700 degrees Celsius or more and 1000 degrees Celsius or less, a step to form a HT (High Temperature)-AlN layer on the LT-AlN layer at a temperature higher than the temperature at which the LT-AlN layer was formed, a step to form an Al (aluminum) nitride semiconductor layer on the HT-AlN layer, a step to form a GaN (gallium nitride) layer on the Al nitride semiconductor layer, and a step to form an Al nitride semiconductor layer on the GaN layer.