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    METHODS OF FORMING THIN FILMS AND METHODS OF FABRICATING INTEGRATED CIRCUIT DEVICES USING THE SAME
    4.
    发明申请
    METHODS OF FORMING THIN FILMS AND METHODS OF FABRICATING INTEGRATED CIRCUIT DEVICES USING THE SAME 有权
    形成薄膜的方法和使用其制造集成电路器件的方法

    公开(公告)号：US20170062205A1

    公开(公告)日：2017-03-02

    申请号：US15182744

    申请日：2016-06-15

    Applicant: Samsung Electronics Co., Ltd. ,  Adeka Corporation

    Inventor： Jae wan Chang ,  Youn soo Kim ,  Tsubasa Shiratori

    IPC: H01L21/02 ,  H01L21/306 ,  H01L21/31 ,  H01L29/66

    CPC classification number: H01L21/0228 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/30604 ,  H01L21/31 ,  H01L29/66795

    Abstract: Provided herein are methods of forming thin films. In some embodiments, to form a thin film, a precursor adsorption layer including an organic ligand is formed by supplying a precursor including a metal or silicon central atom, and the organic ligand onto a lower structure. An intermediate result layer is formed by supplying a non-oxidant onto the precursor adsorption layer. In forming the intermediate result layer, the organic ligand included in the precursor adsorption layer is substituted with a substituent. An oxide film including the central atom is formed from the intermediate result layer by supplying an oxidant onto the intermediate result layer.

    Abstract translation: 本文提供了形成薄膜的方法。 在一些实施方案中，为了形成薄膜，通过向下部结构提供包含金属或硅中心原子的前体和有机配体而形成包含有机配体的前体吸附层。 通过向前体吸附层上提供非氧化剂形成中间结果层。 在形成中间结果层时，包含在前体吸附层中的有机配体被取代基取代。 通过向中间结果层提供氧化剂，由中间结果层形成包含中心原子的氧化物膜。

    Raw material for forming thin film, and method for manufacturing thin film
    7.
    发明授权
    Raw material for forming thin film, and method for manufacturing thin film 有权

    公开(公告)号：US10927460B2

    公开(公告)日：2021-02-23

    申请号：US16302895

    申请日：2017-02-27

    Applicant: ADEKA CORPORATION

    Inventor： Hiroki Sato ,  Naoki Yamada ,  Tsubasa Shiratori ,  Haruyoshi Sato

    IPC: C23C16/455 ,  C23C16/40

    Abstract: A raw material for forming a thin film that includes a compound represented by General Formula (1) below. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms; R2 to R5 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms; A represents an alkanediyl group having 1 to 4 carbon atoms; and M represents titanium, zirconium or hafnium. Provided that when M represents zirconium, A represents an alkanediyl group having 3 or 4 carbon atoms. When M represents titanium or hafnium, it is preferred that A represents an alkanediyl group having 2 or 3 carbon atoms. When M represents zirconium, it is preferred that A represent an alkanediyl group having 3 carbon atoms.

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