Tungsten compound, raw material for thin film formation and method for producing thin film
Abstract:
The present invention provides a tungsten compound represented by the following general formula (1):




(in the formula, X represents a halogen atom, R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R6 represents a tertiary butyl group or a tertiary pentyl group, and R7 represents an alkyl group having 1 to 5 carbon atoms. However, when R1 to R5 are all hydrogen atoms and R6 is a tertiary butyl group, and when R1 to R5 are all methyl groups and R6 is a tertiary butyl group, R7 represents an alkyl group having 1 to 3 or 5 carbon atoms).
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