Invention Grant
- Patent Title: Tungsten compound, raw material for thin film formation and method for producing thin film
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Application No.: US16631245Application Date: 2018-07-04
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Publication No.: US11807652B2Publication Date: 2023-11-07
- Inventor: Akio Saito , Tsubasa Shiratori , Yutaro Aoki
- Applicant: ADEKA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: ADEKA CORPORATION
- Current Assignee: ADEKA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP 17158565 2017.08.21
- International Application: PCT/JP2018/025392 2018.07.04
- International Announcement: WO2019/039103A 2019.02.28
- Date entered country: 2020-01-15
- Main IPC: C07F11/00
- IPC: C07F11/00 ; C23C16/40 ; C23C16/455 ; H01L21/02

Abstract:
The present invention provides a tungsten compound represented by the following general formula (1):
(in the formula, X represents a halogen atom, R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R6 represents a tertiary butyl group or a tertiary pentyl group, and R7 represents an alkyl group having 1 to 5 carbon atoms. However, when R1 to R5 are all hydrogen atoms and R6 is a tertiary butyl group, and when R1 to R5 are all methyl groups and R6 is a tertiary butyl group, R7 represents an alkyl group having 1 to 3 or 5 carbon atoms).
(in the formula, X represents a halogen atom, R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R6 represents a tertiary butyl group or a tertiary pentyl group, and R7 represents an alkyl group having 1 to 5 carbon atoms. However, when R1 to R5 are all hydrogen atoms and R6 is a tertiary butyl group, and when R1 to R5 are all methyl groups and R6 is a tertiary butyl group, R7 represents an alkyl group having 1 to 3 or 5 carbon atoms).
Public/Granted literature
- US20200216479A1 TUNGSTEN COMPOUND, RAW MATERIAL FOR THIN FILM FORMATION AND METHOD FOR PRODUCING THIN FILM Public/Granted day:2020-07-09
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