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公开(公告)号：US09881796B2
公开(公告)日：2018-01-30
申请号：US14823293
申请日：2015-08-11
Applicant: ADEKA CORPORATION
Inventor： Hiroki Sato , Junji Ueyama
IPC: H01L21/28 , C23C16/40 , C07F11/00 , C23C16/455 , H01L29/51 , H01L21/285 , H01L21/768 , H01L29/49
CPC classification number: H01L21/28194 , C07F11/005 , C23C16/40 , C23C16/405 , C23C16/45553 , H01L21/28556 , H01L21/76841 , H01L29/4966 , H01L29/517 , Y02E10/541 , Y02P70/521
Abstract: Disclosed is a method for manufacturing a molybdenum oxide-containing thin film, involving vaporizing a starting material for forming a thin film containing a compound represented by the following general formula (I) to give vapor containing a molybdenum amide compound, introducing the obtained vapor onto a substrate, and further introducing an oxidizing gas to cause decomposition and/or a chemical reaction to form a thin film on the substrate. In the formula, R1 and R2 each represents a straight or branched alkyl group having 1 to 4 carbon atom(s), R3 represents a t-butyl group or a t-amyl group, y represents 0 or 2, x is 4 when y is 0, or x is 2 when y is 2, wherein R1 and R2 that are plurally present may be the same or different.
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Patent Agency Ranking
公开(公告)号：US09695207B2
公开(公告)日：2017-07-04
申请号：US14421154
申请日：2013-10-15
Applicant: ADEKA CORPORATION
Inventor： Hiroki Sato , Junji Ueyama
CPC classification number: C07F17/00 , C07F11/00 , C23C16/18 , C23C16/405 , C23C16/44 , C23C16/45525
Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.)
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3.发明申请METHOD FOR PRODUCING THIN FILM CONTAINING MOLYBDENUM, THIN-FILM-FORMING MATERIAL, AND MOLYBDENUM IMIDE COMPOUND 有权生产含有薄膜，薄膜形成材料和多晶硅化合物的薄膜的方法公开(公告)号：US20150203521A1
公开(公告)日：2015-07-23
申请号：US14421154
申请日：2013-10-15
Applicant: ADEKA CORPORATION
Inventor： Hiroki Sato , Junji Ueyama
IPC: C07F17/00 , C23C16/44 , C23C16/455 , C07F11/00
CPC classification number: C07F17/00 , C07F11/00 , C23C16/18 , C23C16/405 , C23C16/44 , C23C16/45525
Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.)
Abstract translation: 在本发明的制造薄膜的方法中，包括将由下述式（I）表示的含有酰亚胺化合物的薄膜形成材料蒸发而得到的蒸气导入到基板上， 包括酰亚胺化合物; 然后通过钼酰亚胺化合物的分解和/或化学反应在衬底上形成包括钼的薄膜。 （式中，R1〜R10各自表示氢原子或碳原子数1〜5的直链或支链烷基，R11表示碳原子数为1〜8的直链或支链烷基。）
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公开(公告)号：US10927460B2
公开(公告)日：2021-02-23
申请号：US16302895
申请日：2017-02-27
Applicant: ADEKA CORPORATION
Inventor： Hiroki Sato , Naoki Yamada , Tsubasa Shiratori , Haruyoshi Sato
IPC: C23C16/455 , C23C16/40
Abstract: A raw material for forming a thin film that includes a compound represented by General Formula (1) below. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms; R2 to R5 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms; A represents an alkanediyl group having 1 to 4 carbon atoms; and M represents titanium, zirconium or hafnium. Provided that when M represents zirconium, A represents an alkanediyl group having 3 or 4 carbon atoms. When M represents titanium or hafnium, it is preferred that A represents an alkanediyl group having 2 or 3 carbon atoms. When M represents zirconium, it is preferred that A represent an alkanediyl group having 3 carbon atoms.
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公开(公告)号：US10150789B2
公开(公告)日：2018-12-11
申请号：US15598450
申请日：2017-05-18
Applicant: ADEKA CORPORATION
Inventor： Hiroki Sato , Junji Ueyama
Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms).
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公开(公告)号：US09988411B2
公开(公告)日：2018-06-05
申请号：US15598398
申请日：2017-05-18
Applicant: ADEKA CORPORATION
Inventor： Hiroki Sato , Junji Ueyama
CPC classification number: C07F17/00 , C07F11/00 , C23C16/18 , C23C16/405 , C23C16/44 , C23C16/45525
Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.)
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