公开(公告)号：US10253408B2

公开(公告)日：2019-04-09

申请号：US15559127

申请日：2016-05-17

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Akihiro Nishida ,  Nana Sugiura

IPC: C07F13/00 ,  C07F15/04 ,  C07F15/06 ,  C23C16/18 ,  H01L21/285

Abstract: A novel compound represented by the general formula (I) or (II) below: [in the formula, each of R1 and R2 independently represent a C1˜12 hydrocarbon group, and Si(R3)3 is optionally substituted for a hydrogen atom in the hydrocarbon group; however, R1 and R2 are different groups; R3 represents a methyl or ethyl group; M represents a metal atom or silicon atom; and n is an integer from 1 to 4].

公开(公告)号：US11623935B2

公开(公告)日：2023-04-11

申请号：US17312637

申请日：2019-12-03

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Tomoharu Yoshino ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C23C16/18 ,  C23C16/455 ,  C07F7/22

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

公开(公告)号：US11618762B2

公开(公告)日：2023-04-04

申请号：US17490227

申请日：2021-09-30

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Nana Okada ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. wherein R1 represents an isopropyl group, R2 represents a methyl group, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents a propane-1,2-diyl group and M represents copper, nickel, cobalt or manganese.

公开(公告)号：US20150175642A1

公开(公告)日：2015-06-25

申请号：US14413102

申请日：2013-10-21

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Naoki Yamada ,  Tsubasa Shiratori ,  Akio Saito ,  Tomoharu Yoshino

IPC: C07F15/06 ,  C23C16/18 ,  C07F15/04 ,  C23C16/40 ,  C07F1/08 ,  C07C251/08

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

Abstract translation: 公开了具有适合用于通过CVD形成薄膜的材料的物理性质的金属醇盐化合物，特别是具有适用于形成金属 - 铜薄膜的材料的物理性质的金属醇盐化合物。 金属醇盐化合物由通式（I）表示。 还描述了包含金属醇盐化合物的薄膜形成材料。 （式中，R1表示甲基或乙基，R2表示氢原子或甲基，R3表示C1-3直链或支链烷基，M表示金属原子或硅原子，n表示 金属原子或硅原子的化合价。

公开(公告)号：US11555044B2

公开(公告)日：2023-01-17

申请号：US17281105

申请日：2019-09-24

Applicant: ADEKA CORPORATION

Inventor： Nana Okada ,  Tomoharu Yoshino ,  Atsushi Yamashita

IPC: C23C16/455 ,  C23C16/18 ,  C07F5/00

Abstract: The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A1 represents an alkanediyl group having 1 to 5 carbon atoms.

公开(公告)号：US11161867B2

公开(公告)日：2021-11-02

申请号：US16346724

申请日：2017-10-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Nana Okada ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.).

公开(公告)号：US10920313B2

公开(公告)日：2021-02-16

申请号：US16326973

申请日：2017-07-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C23C16/18 ,  C07C251/08 ,  C07F13/00 ,  C07F15/04 ,  C23C16/455

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 represents a C1-6 linear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which R1 in General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.

公开(公告)号：US09663538B2

公开(公告)日：2017-05-30

申请号：US14434139

申请日：2013-11-26

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C07F5/06 ,  C23C16/40 ,  C23C16/06 ,  C23C16/44

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R1 and R2 each represent straight or branched C2-C5 alkyl, and R3 represent methyl or ethyl. R1 and R2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.

公开(公告)号：US11760771B2

公开(公告)日：2023-09-19

申请号：US16760171

申请日：2018-07-27

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Nana Okada ,  Masako Hatase

IPC: C07F15/00 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285

CPC classification number: C07F15/0046 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/28568

Abstract: A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

公开(公告)号：US10882874B2

公开(公告)日：2021-01-05

申请号：US16308900

申请日：2017-05-15

Applicant: ADEKA CORPORATION

Inventor： Makoto Okabe ,  Akihiro Nishida ,  Tomoharu Yoshino

IPC: C07F9/00 ,  C23C16/18 ,  H01L21/285 ,  C07C251/08 ,  C23C16/34 ,  C23C16/455

Abstract: A vanadium compound represented by following General Formula (1). In General Formula (1), R1 represents a linear or branched alkyl group having 1 to 7 carbon atoms and n represents a number from 2 to 4. R1 preferably represents a secondary alkyl or a tertiary alkyl. It is preferred that in General Formula (1), n is 2 and R1 is tert-butyl group or tert-pentyl group, since the compound has a broad ALD window and high thermal decomposition temperature to be able to form a good quality vanadium-containing thin film that has a small carbon residue when used as an ALD material.