ETCHING METHOD AND DEVICES PRODUCED USING THE ETCHING METHOD
    2.
    发明申请
    ETCHING METHOD AND DEVICES PRODUCED USING THE ETCHING METHOD 有权
    蚀刻方法和使用蚀刻方法生产的装置

    公开(公告)号:US20140124477A1

    公开(公告)日:2014-05-08

    申请号:US14127277

    申请日:2012-07-13

    CPC classification number: C23F1/30 C09K13/04 G06F3/044

    Abstract: A double ITO structure, containing sequential layers of indium tin oxide (ITO), silicon dioxide (SiO2) (which may include a dopant material) and ITO, is selectively protected by a patterned photo-resist mask. The sequential layers are etched together in a single etching step using an etchant composition which is an acidic solution containing a transition metal chloride and hydrochloric acid (HCl). Thus, the double ITO structure is etched using a substantially fluoride-free etchant composition.

    Abstract translation: 包含铟锡氧化物(ITO),二氧化硅(SiO 2)(其可以包括掺杂剂材料)和ITO的顺序层的双ITO结构被图案化的光刻胶掩模选择性地保护。 使用蚀刻剂组合物在单个蚀刻步骤中将顺序层蚀刻在一起,该蚀刻剂组合物是含有过渡金属氯化物和盐酸(HCl)的酸性溶液。 因此,使用基本上不含氟化物的蚀刻剂组合物来蚀刻双ITO结构。

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