公开(公告)号：US09040010B2

公开(公告)日：2015-05-26

申请号：US13267490

申请日：2011-10-06

申请人： Jin-Seok Lee ,  Bo-Yun Jang ,  Young-Soo Ahn

发明人： Jin-Seok Lee ,  Bo-Yun Jang ,  Young-Soo Ahn

IPC分类号： C01B33/02 ,  C30B15/18 ,  C30B15/30 ,  C30B15/10 ,  C30B29/06 ,  C30B35/00

CPC分类号： C30B29/06 ,  C30B15/10 ,  C30B35/002 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

摘要翻译： 本公开提供了一种用于制造具有用于硅熔化的双坩埚的单晶硅锭的装置，其可由于双坩埚结构而被再利用。 该装置包括用于硅熔化的双坩埚，其中加入原料硅，加热双坩埚以将原料硅熔化成熔融硅的坩埚加热器，控制双坩埚旋转和升高的坩埚驱动单元， 设置在双坩埚上方并拉出浸入熔融硅中的晶种以产生硅锭。 双坩埚具有在其上侧开口的容器形状，并且包括具有连接内底和内壁的倾斜表面的石墨坩埚和插入到石墨坩埚中并接收装入双重坩埚的原料硅的石英坩埚 坩。

公开(公告)号：US20120288432A1

公开(公告)日：2012-11-15

申请号：US13267490

申请日：2011-10-06

申请人： Jin-Seok LEE ,  Bo-Yun JANG ,  Young-Soo AHN

发明人： Jin-Seok LEE ,  Bo-Yun JANG ,  Young-Soo AHN

IPC分类号： C01B33/02 ,  C30B15/18 ,  C30B15/30 ,  C30B15/10

CPC分类号： C30B29/06 ,  C30B15/10 ,  C30B35/002 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

摘要翻译： 本公开提供了一种用于制造具有用于硅熔化的双坩埚的单晶硅锭的装置，其可由于双坩埚结构而被再利用。 该装置包括用于硅熔化的双坩埚，其中加入原料硅，加热双坩埚以将原料硅熔化成熔融硅的坩埚加热器，控制双坩埚旋转和升高的坩埚驱动单元， 设置在双坩埚上方并拉出浸入熔融硅中的晶种以产生硅锭。 双坩埚具有在其上侧开口的容器形状，并且包括具有连接内底和内壁的倾斜表面的石墨坩埚和插入到石墨坩埚中并接收装入双重坩埚的原料硅的石英坩埚 坩。

公开(公告)号：US08159430B2

公开(公告)日：2012-04-17

申请号：US12043792

申请日：2008-03-06

申请人： Jang-Kun Song ,  Yun Jang ,  Eun-Hee Han

发明人： Jang-Kun Song ,  Yun Jang ,  Eun-Hee Han

IPC分类号： G09G3/36 ,  G02F1/1343

CPC分类号： G09G3/3648 ,  G02F1/133707 ,  G02F1/13624 ,  G02F2001/134345 ,  G09G3/3607 ,  G09G3/3614 ,  G09G3/3688 ,  G09G2300/0876 ,  G09G2320/028

摘要： A liquid crystal display are provided, which includes: a liquid crystal panel assembly including a plurality of pixels arranged in a matrix including a plurality of rows and a plurality of columns, a plurality of gate lines, and a plurality of data lines, wherein the number of the data lines is larger than the number of the columns, the data lines are separated from each other in the panel assembly, each pixel is connected to one of the gate lines and adjacent to two of the data lines, and the pixels in each column are alternately connected to the adjacent data lines at least every one row.

摘要翻译： 提供了一种液晶显示器，其包括：液晶面板组件，包括以矩阵形式排列的多个像素，所述矩阵包括多行和多列，多条栅极线和多条数据线，其中， 数据线的数量大于列的数量，数据线在面板组件中彼此分离，每个像素连接到一条栅极线并且与两条数据线相邻，并且像素在 每列至少每一行交替地连接到相邻数据线。

公开(公告)号：US08137521B2

公开(公告)日：2012-03-20

申请号：US12194361

申请日：2008-08-19

申请人： Yong Hyup Kim ,  Eui Yun Jang

发明人： Yong Hyup Kim ,  Eui Yun Jang

IPC分类号： C25D13/12

CPC分类号： C25D13/02 ,  C25D13/04 ,  C25D13/22

摘要： An apparatus for forming a carbon nanotube sheet is provided. The apparatus includes a bath and a driving unit wherein the bath has a bottom surface and is configured to contain a carbon nanotube colloidal solution. The bottom surface is capable of having an array of capillary tubes. The driving unit is configured to drive at least a part of the carbon nanotube colloidal solution out of the bath through the array of capillary tubes.

摘要翻译： 提供一种用于形成碳纳米管片的设备。 所述装置包括浴和驱动单元，其中所述浴具有底表面并且构造成容纳碳纳米管胶体溶液。 底面能够具有一排毛细管。 所述驱动单元构造成通过所述毛细管阵列将所述碳纳米管胶体溶液的至少一部分驱出所述浴。

公开(公告)号：US20110303290A1

公开(公告)日：2011-12-15

申请号：US13158490

申请日：2011-06-13

申请人： Bo-Yun JANG ,  Jin-Seok LEE ,  Young-Soo AHN

发明人： Bo-Yun JANG ,  Jin-Seok LEE ,  Young-Soo AHN

IPC分类号： H01L31/0264 ,  H01L31/02 ,  C03B19/02 ,  C03B5/23 ,  C01B33/00

CPC分类号： C30B15/007 ,  C30B15/06 ,  C30B15/14 ,  C30B29/06

摘要： The present disclosure provides a method and apparatus for manufacturing a silicon substrate using inert gas blowing during continuous casting to provide excellent productivity and surface quality. The apparatus includes a raw silicon feeder through which raw silicon is fed, a silicon melting unit disposed under the raw silicon feeder and melting the raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer unit transferring the silicon melt tapped from the molten silicon storage unit, and a cooling unit cooling the silicon melt transferred by the transfer unit. Here, the cooling unit cools the silicon melt by blowing inert gas at a rate of 0.1˜2.5 Nm3/h.

摘要翻译： 本公开提供了一种用于在连续铸造期间使用惰性气体吹制制造硅衬底以提供优异的生产率和表面质量的方法和装置。 该装置包括：原料硅供给装置，通过原料硅供给装置配置的硅熔融单元，熔融原料硅以形成熔融硅;熔融硅储存单元，储存从硅熔融单元供给的熔融硅;以及 点击熔融硅以提供具有恒定厚度的硅熔体，转移单元，转移从熔融硅储存单元抽出的硅熔体;以及冷却单元，冷却由转印单元转移的硅熔体。 这里，冷却单元通过以0.1〜2.5Nm 3 / h的速度吹入惰性气体来冷却硅熔体。

公开(公告)号：US08021640B2

公开(公告)日：2011-09-20

申请号：US12198815

申请日：2008-08-26

申请人： Yong Hyup Kim ,  Eui Yun Jang

发明人： Yong Hyup Kim ,  Eui Yun Jang

IPC分类号： D01F9/12

CPC分类号： D21H13/50 ,  Y10S977/742 ,  Y10S977/845

摘要： Techniques and apparatuses for making carbon nanotube (CNT) papers are provided. In one embodiment, a method for making a CNT paper may include disposing a structure having an edge portion including a relatively sharp edge into a CNT colloidal solution and withdrawing the structure from the CNT colloidal solution.

摘要翻译： 提供制造碳纳米管（CNT）纸的技术和装置。 在一个实施例中，制造CNT纸的方法可以包括将具有包括相对锋利边缘的边缘部分的结构设置在CNT胶体溶液中并从CNT胶体溶液中取出结构。

公开(公告)号：US20100095883A1

公开(公告)日：2010-04-22

申请号：US12568436

申请日：2009-09-28

申请人： Bo Yun JANG ,  Young Soo Ahn ,  Joon Soo Kim ,  Sang Hyun Park ,  Dong Kook Kim ,  Gwon Jong Yu

发明人： Bo Yun JANG ,  Young Soo Ahn ,  Joon Soo Kim ,  Sang Hyun Park ,  Dong Kook Kim ,  Gwon Jong Yu

IPC分类号： C30B11/00

CPC分类号： C30B13/14 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1068

摘要： Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible.

摘要翻译： 本文公开了一种用于基于电磁感应的硅熔化的石墨坩埚和使用该方法的硅熔化/精炼装置，其通过间接熔化和直接熔融的组合进行熔融操作。 坩埚由石墨材料形成，并且包括具有开放的上部的圆柱体，硅原料通过该上部装载到坩埚中，以及由感应线圈包围的外壁，其中多个狭缝通过 外壁和坩埚的内壁，使得由在感应线圈中流动的电流产生的电磁力作用于坩埚的内部中心，以防止硅熔体与坩埚的内壁接触。

公开(公告)号：US20100055562A1

公开(公告)日：2010-03-04

申请号：US12199742

申请日：2008-08-27

申请人： Yong Hyup Kim ,  Eui Yun Jang

发明人： Yong Hyup Kim ,  Eui Yun Jang

IPC分类号： H01M4/02 ,  H01B13/004 ,  C23C14/02 ,  B32B5/16

CPC分类号： H01M4/02 ,  H01M4/0402 ,  H01M4/48 ,  H01M4/583 ,  H01M4/96 ,  Y10T428/25

摘要： Techniques for forming nanowire layers on a substrate are provided.

摘要翻译： 提供了在衬底上形成纳米线层的技术。

公开(公告)号：US20100044215A1

公开(公告)日：2010-02-25

申请号：US12194361

申请日：2008-08-19

申请人： Yong Hyup KIM ,  Eui Yun Jang

发明人： Yong Hyup KIM ,  Eui Yun Jang

IPC分类号： C25B1/00 ,  C25B9/00

CPC分类号： C25D13/02 ,  C25D13/04 ,  C25D13/22

摘要： An apparatus for forming a carbon nanotube sheet is provided. The apparatus includes a bath and a driving unit wherein the bath has a bottom surface and is configured to contain a carbon nanotube colloidal solution. The bottom surface is capable of having an array of capillary tubes. The driving unit is configured to drive at least a part of the carbon nanotube colloidal solution out of the bath through the array of capillary tubes.

摘要翻译： 提供一种用于形成碳纳米管片的设备。 所述装置包括浴和驱动单元，其中所述浴具有底表面并且构造成容纳碳纳米管胶体溶液。 底面能够具有一排毛细管。 所述驱动单元构造成通过所述毛细管阵列将所述碳纳米管胶体溶液的至少一部分驱出所述浴。

公开(公告)号：US20090262285A1

公开(公告)日：2009-10-22

申请号：US12489802

申请日：2009-06-23

申请人： Yun JANG ,  Min-Sik JUNG

发明人： Yun JANG ,  Min-Sik JUNG

IPC分类号： G02F1/1335 ,  H01L21/00

CPC分类号： G02B5/201 ,  G02B5/223

摘要： In a method of fabricating a liquid crystal display device, when a photoresist film formed on a substrate for the liquid crystal display device is exposed and developed, protrusions are formed on the substrate for increasing a viewing angle of the liquid crystal display device. Although the substrate is formed with step differences thereon caused by various intermediate films, the protrusions may have a same size since an exposure amount to the photoresist film is varied according to the step differences of the substrate on which the protrusions are formed. Thus, the liquid crystal display device may have an improved display quality.

摘要翻译： 在制造液晶显示装置的方法中，当在用于液晶显示装置的基板上形成的光致抗蚀剂膜曝光和显影时，在基板上形成突起以增加液晶显示装置的视角。 虽然基板由各种中间膜引起的阶梯差异形成，但是由于根据形成有突起的基板的台阶差，对光致抗蚀剂膜的曝光量变化，所以突起可以具有相同的尺寸。 因此，液晶显示装置可以具有改善的显示质量。