公开(公告)号：US20120231562A1

公开(公告)日：2012-09-13

申请号：US13408293

申请日：2012-02-29

申请人： Yukari Takeya ,  Hayato Iwamoto ,  Yoshiya Hagimoto ,  Eizo Motooka

发明人： Yukari Takeya ,  Hayato Iwamoto ,  Yoshiya Hagimoto ,  Eizo Motooka

IPC分类号： H01L21/66 ,  B05C11/00

摘要： A semiconductor manufacturing apparatus includes: a treatment chamber treating a treated film of a wafer using a desired chemical fluid; a film thickness measurement unit measuring an initial film thickness of the treated film before treatment and a final film thickness of the treated film after treatment; and a main body controlling unit calculating a treatment speed of the chemical fluid from the initial film thickness, the final film thickness, and a chemical fluid treatment time taken from the initial film thickness to the final film thickness to calculate a chemical fluid treatment time for a wafer to be treated next from the calculated treatment speed.

摘要翻译： 半导体制造装置包括：使用期望的化学流体处理晶片的处理膜的处理室; 测量处理前处理膜的初始膜厚和处理后处理膜的最终膜厚的膜厚测量单元; 以及主体控制单元，其从初始膜厚度，最终膜厚度和从初始膜厚度到最终膜厚度的化学流体处理时间计算化学流体的处理速度，以计​​算化学流体处理时间， 接下来从计算出的处理速度处理待处理的晶片。

公开(公告)号：US20120077348A1

公开(公告)日：2012-03-29

申请号：US13311617

申请日：2011-12-06

申请人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

发明人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

IPC分类号： H01L21/306 ,  B08B3/08

CPC分类号： H01L21/02052 ,  H01L21/31133

摘要： There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

摘要翻译： 提供了一种基板处理方法，用于通过将药液供给到基板的表面进行处理，其中在将化学液体供给到基板的预定区域之前，具有低于化学品的电阻率的液体物质 将液体供给到基板的表面，使得液体物质至少润湿预定面积，然后将化学液体供给到预定区域，使得在基板上进行处理，并将化学液体供给到表面 的基底。

公开(公告)号：US20130009321A1

公开(公告)日：2013-01-10

申请号：US13533526

申请日：2012-06-26

申请人： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

发明人： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC分类号： H01L23/48 ,  H01L23/482 ,  H01L21/02

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

摘要： Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

公开(公告)号：US20070105242A1

公开(公告)日：2007-05-10

申请号：US11542138

申请日：2006-10-04

申请人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

发明人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

IPC分类号： H01L21/00

CPC分类号： H01L21/02052 ,  H01L21/31133

摘要： There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

摘要翻译： 提供了一种基板处理方法，用于通过将药液供给到基板的表面进行处理，其中在将化学液体供给到基板的预定区域之前，具有低于化学品的电阻率的液体物质 将液体供给到基板的表面，使得液体物质至少润湿预定面积，然后将化学液体供给到预定区域，使得在基材上进行处理，并将化学液体供给到表面 的基底。

公开(公告)号：US10699968B2

公开(公告)日：2020-06-30

申请号：US13408293

申请日：2012-02-29

申请人： Yukari Takeya ,  Hayato Iwamoto ,  Yoshiya Hagimoto ,  Eizo Motooka

发明人： Yukari Takeya ,  Hayato Iwamoto ,  Yoshiya Hagimoto ,  Eizo Motooka

IPC分类号： H01L21/66 ,  B05C11/00 ,  B24B57/02 ,  B24B37/26 ,  B24B37/005 ,  B24B37/32 ,  B24B53/017

摘要： A semiconductor manufacturing apparatus includes: a treatment chamber treating a treated film of a wafer using a desired chemical fluid; a film thickness measurement unit measuring an initial film thickness of the treated film before treatment and a final film thickness of the treated film after treatment; and a main body controlling unit calculating a treatment speed of the chemical fluid from the initial film thickness, the final film thickness, and a chemical fluid treatment time taken from the initial film thickness to the final film thickness to calculate a chemical fluid treatment time for a wafer to be treated next from the calculated treatment speed.

公开(公告)号：US20090014812A1

公开(公告)日：2009-01-15

申请号：US12168427

申请日：2008-07-07

申请人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

发明人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

IPC分类号： H01L21/8236 ,  H01L27/088

CPC分类号： H01L21/82385 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823835 ,  H01L21/823857 ,  H01L21/823871 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

摘要翻译： 本文公开了一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

公开(公告)号：US08896125B2

公开(公告)日：2014-11-25

申请号：US13533526

申请日：2012-06-26

申请人： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

发明人： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L21/768 ,  H01L27/146 ,  H01L27/06

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

摘要： Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

摘要翻译： 本发明公开了一种半导体器件，包括：第一基板，包括第一电极和由用于第一电极的扩散防止材料构成的第一绝缘膜，并且覆盖第一电极的周边，第一电极和第一绝缘膜协作 彼此配置接合面; 以及第二基板，其接合并设置在所述第一基板上并且包括接合到所述第一电极的第二电极，以及由用于所述第二电极的扩散防止材料构成并覆盖所述第二电极的周边的第二绝缘膜，所述第二电极 并且所述第二绝缘膜彼此配合以配置到所述第一基板的接合面。

公开(公告)号：US08088693B2

公开(公告)日：2012-01-03

申请号：US11542138

申请日：2006-10-04

申请人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

发明人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

IPC分类号： H01L21/302

CPC分类号： H01L21/02052 ,  H01L21/31133

摘要： There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

摘要翻译： 提供了一种基板处理方法，用于通过将药液供给到基板的表面进行处理，其中在将化学液体供给到基板的预定区域之前，具有低于化学品的电阻率的液体物质 将液体供给到基板的表面，使得液体物质至少润湿预定面积，然后将化学液体供给到预定区域，使得在基板上进行处理，并将化学液体供给到表面 的基底。

公开(公告)号：US20110269280A1

公开(公告)日：2011-11-03

申请号：US13181583

申请日：2011-07-13

申请人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

发明人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

IPC分类号： H01L21/8234

CPC分类号： H01L21/82385 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823835 ,  H01L21/823857 ,  H01L21/823871 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

摘要翻译： 一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

公开(公告)号：US07994603B2

公开(公告)日：2011-08-09

申请号：US12168427

申请日：2008-07-07

申请人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

发明人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

IPC分类号： H01L21/70

CPC分类号： H01L21/82385 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823835 ,  H01L21/823857 ,  H01L21/823871 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

摘要翻译： 本文公开了一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。