公开(公告)号：US08642444B2

公开(公告)日：2014-02-04

申请号：US12944193

申请日：2010-11-11

申请人： Nobutoshi Fujii

发明人： Nobutoshi Fujii

IPC分类号： H01L21/30

CPC分类号： H01L27/1469 ,  H01L21/76251 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14683 ,  H01L31/18 ,  H04N5/374 ,  Y10T428/24421

摘要： Disclosed herein is a method of manufacturing a bonded substrate, including the steps of: forming a first bonding layer on a surface on one side of a semiconductor substrate; forming a second bonding layer on a surface on one side of a support substrate; adhering the first bonding layer and the second bonding layer to each other; a heat treatment for bonding the first bonding layer and the second bonding layer to each other; and thinning the semiconductor substrate from a surface on the other side of the semiconductor substrate to form a semiconductor layer.

摘要翻译： 这里公开了一种制造键合衬底的方法，包括以下步骤：在半导体衬底的一侧的表面上形成第一接合层; 在支撑基板的一侧的表面上形成第二结合层; 将第一接合层和第二接合层彼此粘合; 用于将第一接合层和第二接合层彼此接合的热处理; 以及从所述半导体衬底的另一侧的表面使所述半导体衬底变薄以形成半导体层。

公开(公告)号：US08212338B2

公开(公告)日：2012-07-03

申请号：US12760041

申请日：2010-04-14

申请人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

发明人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

IPC分类号： H01L21/00

CPC分类号： H01L21/7682 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1047

摘要： A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided.A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

摘要翻译： 提供具有足够低介电常数和高机械强度的半导体器件（具有层间绝缘膜）。 半导体器件的制造方法包括：在半导体衬底的表面上形成有多个孔布置在主要由Si-O键构成的骨架周围的电介质薄膜的步骤，在该半导体衬底的表面上具有期望的元件区域 形成了; 通过掩模在电介质薄膜的表面上施加图案的步骤; 以及使含有至少一种四甲基环四硅氧烷（TMCTS），六甲基二硅氮烷（HMDS）和三甲基氯硅烷（TMCS））的气体与电介质薄膜的图案化表面接触的步骤。

公开(公告)号：US07585789B2

公开(公告)日：2009-09-08

申请号：US11604598

申请日：2006-11-27

申请人： Yasuyoshi Hyodo ,  Kazuo Kohmura ,  Nobutoshi Fujii ,  Nobutaka Kunimi ,  Keizo Kinoshita

发明人： Yasuyoshi Hyodo ,  Kazuo Kohmura ,  Nobutoshi Fujii ,  Nobutaka Kunimi ,  Keizo Kinoshita

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31695 ,  B01D67/0072 ,  B01D71/70 ,  B01D2325/02 ,  B01D2325/26 ,  C23C16/401 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274

摘要： A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si—O bond in its molecule in a gaseous phase into a reaction chamber; forming a siloxane oligomer through plasma reaction of the silicon compound; and supplying an organic amine in a gaseous phase into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a porous film on the semiconductor substrate.

摘要翻译： 在半导体衬底上形成多孔膜的方法包括：将在其分子中含有至少一个Si-O键的硅化合物在气相中供给到反应室中; 通过硅化合物的等离子体反应形成硅氧烷低聚物; 并将气相中的有机胺供给到反应室中，并使有机胺与硅氧烷低聚物反应，从而在半导体衬底上形成多孔膜。

公开(公告)号：US20130009321A1

公开(公告)日：2013-01-10

申请号：US13533526

申请日：2012-06-26

申请人： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

发明人： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC分类号： H01L23/48 ,  H01L23/482 ,  H01L21/02

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

摘要： Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

公开(公告)号：US08288295B2

公开(公告)日：2012-10-16

申请号：US11661705

申请日：2005-09-01

申请人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

发明人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

IPC分类号： H01L21/31

CPC分类号： H01L21/76826 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L2221/1047

摘要： A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided.A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.

摘要翻译： 提供了具有提高电介质薄膜和导电层之间的粘合性并具有高可靠性的布线结构的半导体器件。 本发明的方法包括：在主要由Si-O键构成的骨架周围配置有多个孔的电介质薄膜的表面供给反应性等离子体的工序，进行预处理; 通过溅射法在预处理的电介质薄膜的表面上形成导电膜的步骤; 在预处理步骤之前，使含有至少一种四甲基环四硅氧烷（TMCTS），六甲基二硅氮烷（HMDS）和三甲基氯硅烷（TMCS）分子的气体与电介质薄膜的表面接触。

公开(公告)号：US07727907B2

公开(公告)日：2010-06-01

申请号：US11661706

申请日：2005-09-01

申请人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

发明人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

IPC分类号： H01L21/31

CPC分类号： H01L21/7682 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1047

摘要： A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided.A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

摘要翻译： 提供具有足够低介电常数和高机械强度的半导体器件（具有层间绝缘膜）。 半导体器件的制造方法包括：在半导体衬底的表面上形成有多个孔布置在主要由Si-O键构成的骨架周围的电介质薄膜的步骤，在该半导体衬底的表面上具有期望的元件区域 形成了; 通过掩模在电介质薄膜的表面上施加图案的步骤; 以及使含有至少一种四甲基环四硅氧烷（TMCTS），六甲基二硅氮烷（HMDS）和三甲基氯硅烷（TMCS））的气体与电介质薄膜的图案化表面接触的步骤。

公开(公告)号：US20090206453A1

公开(公告)日：2009-08-20

申请号：US11884358

申请日：2006-02-15

申请人： Nobutoshi Fujii ,  Kazuo Kohmura ,  Hidenori Miyoshi ,  Hirofumi Tanaka ,  Shunsuke Oike ,  Masami Murakami ,  Takeshi Kubota ,  Yoshito Kurano

发明人： Nobutoshi Fujii ,  Kazuo Kohmura ,  Hidenori Miyoshi ,  Hirofumi Tanaka ,  Shunsuke Oike ,  Masami Murakami ,  Takeshi Kubota ,  Yoshito Kurano

IPC分类号： H01L29/00 ,  B05D7/22 ,  B32B3/26

CPC分类号： H01L21/76826 ,  C01B33/12 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31608 ,  H01L21/31695 ,  Y10T428/249994

摘要： A hydrophobic compound having at least one each of hydrophobic group (an alkyl group having 1 to 6 carbon atoms or a —C6H5 group) and polymerizable group (a hydrogen atom, a hydroxyl group or a halogen atom) is allowed to undergo a gas-phase polymerization reaction, under reduced pressure (of not more than 30 kPa), in the presence of a raw porous silica film and to thus form a modified porous silica film wherein a hydrophobic polymer thin film is formed on the inner walls of holes present in the raw porous silica film. The resulting porous silica film has a low relative dielectric constant and a low refractive index and the silica film is likewise improved in the mechanical strength and hydrophobicity. A semiconductor device is produced using the porous silica film.

摘要翻译： 具有疏水性基团（具有1〜6个碳原子的烷基或-C 6 H 5基团）和可聚合基团（氢原子，羟基或卤素原子）中的至少一种的疏水化合物被允许进行气 - 在减压（不大于30kPa）的条件下，在原料多孔二氧化硅膜的存在下进行相聚合反应，从而形成改性多孔二氧化硅膜，其中在存在于孔中的孔的内壁上形成疏水性聚合物薄膜 原料多孔二氧化硅膜。 所得到的多孔二氧化硅膜的相对介电常数低，折射率低，二氧化硅膜的机械强度和疏水性同样提高。 使用多孔二氧化硅膜制造半导体器件。

公开(公告)号：US20080122101A1

公开(公告)日：2008-05-29

申请号：US11661705

申请日：2005-09-01

申请人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

发明人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76826 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L2221/1047

摘要： A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided.A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethylsilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.

摘要翻译： 提供了具有提高电介质薄膜和导电层之间的粘合性并具有高可靠性的布线结构的半导体器件。 本发明的方法包括：在主要由Si-O键构成的骨架周围配置有多个孔的电介质薄膜的表面供给反应性等离子体的工序，进行预处理; 通过溅射法在预处理的电介质薄膜的表面上形成导电膜的步骤; 在预处理步骤之前，使含有至少一种四甲基环四硅氧烷（TMCTS），六甲基硅氮烷（HMDS）和三甲基氯硅烷（TMCS）分子的气体与电介质薄膜的表面接触。

公开(公告)号：US06946161B2

公开(公告)日：2005-09-20

申请号：US10645581

申请日：2003-08-22

申请人： Kazuhiro Yamada ,  Nobutoshi Fujii

发明人： Kazuhiro Yamada ,  Nobutoshi Fujii

IPC分类号： C01B33/12 ,  C09D183/04 ,  C23C18/12 ,  H01L21/316 ,  B05D3/02

CPC分类号： C23C18/122 ,  C23C18/1212 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695

摘要： A method for forming a porous silica film having mechanical strength utilizeses a surfactant, one or more kinds of nonionic surfactant(s) having a 0.1 weight % concentration according to the Du Nouy method expression and a surface tension of 45 mN/m or larger at 25° C. is (are) used as a surfactant, a mixed solution obtained by mixing this nonionic surfactant, a hydrolyzable alkoxysilane compound, water and an alcohol is coated on the substrate, and the surfactant in this mixed solution is decomposed or burned out to form a porous silica film. The surfactant is suitably represented by formula OH(CH2CH2O)x(CH(CH3)CH2O)y(CH2CH2O)xH where x and y denote an integer satisfying 1≦x≦185 and 5≦y≦70, respectively. Alternatively, a mixed solution in which a dimethyldialkoxysilane is added may be used.

摘要翻译： 形成具有机械强度的多孔二氧化硅膜的方法利用表面活性剂，根据Du Nouy方法表达式具有0.1重量％浓度的一种或多种非离子表面活性剂和45mN / m以上的表面张力 25℃作为表面活性剂，通过将该非离子表面活性剂，可水解烷氧基硅烷化合物，水和醇混合而获得的混合溶液涂布在基材上，并将该混合溶液中的表面活性剂分解或烧尽 以形成多孔二氧化硅膜。 表面活性剂适当地由式OH（CH 2 CH 2 CH 2）x（CH（CH 3 CH 3）CH 2） （CH 2 CH 2 CH 2）x H其中x和y表示满足1 <= x <= 185且5 <= y <= 70的整数 ， 分别。 或者，可以使用其中加入二甲基二烷氧基硅烷的混合溶液。

公开(公告)号：US20120193009A1

公开(公告)日：2012-08-02

申请号：US13349707

申请日：2012-01-13

申请人： Nobutoshi Fujii

发明人： Nobutoshi Fujii

IPC分类号： B32B37/00

CPC分类号： H01L21/67092 ,  H01L21/187 ,  Y10T156/10

摘要： A substrate bonding method includes: applying a predetermined load to a first substrate by causing a pressing member to come into surface contact with a predetermined region of the first substrate; and simultaneously with the applying of the predetermined load or after applying the predetermined load to the first substrate, in the state where the pressing member comes into surface contact with the first substrate, causing the first substrate to come into contact with a second substrate.

摘要翻译： 基板接合方法包括：通过使按压部件与第一基板的预定区域进行表面接触，将预定的载荷施加到第一基板; 并且在施加预定负载的同时或在将预定负载施加到第一基板之后，在按压部件与第一基板进行表面接触的状态下，使第一基板与第二基板接触。