Invention Grant
- Patent Title: Manufacturing method of semiconductor device and semiconductor device produced therewith
- Patent Title (中): 由此制造的半导体装置及半导体装置的制造方法
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Application No.: US11661705Application Date: 2005-09-01
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Publication No.: US08288295B2Publication Date: 2012-10-16
- Inventor: Yoshiaki Oku , Nobutoshi Fujii , Kazuo Kohmura
- Applicant: Yoshiaki Oku , Nobutoshi Fujii , Kazuo Kohmura
- Applicant Address: JP Kyoto JP Kanagawa
- Assignee: Rohm Co., Ltd.,ULVAC
- Current Assignee: Rohm Co., Ltd.,ULVAC
- Current Assignee Address: JP Kyoto JP Kanagawa
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2004-255462 20040902
- International Application: PCT/JP2005/016030 WO 20050901
- International Announcement: WO2006/025500 WO 20060309
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided.A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.
Public/Granted literature
- US20080122101A1 Manufacturing Method Of Semiconductor Device And Semiconductor Device Produced Therewith Public/Granted day:2008-05-29
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