公开(公告)号：US20070224837A1

公开(公告)日：2007-09-27

申请号：US11698212

申请日：2007-01-26

申请人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

发明人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

IPC分类号： H01L21/31

CPC分类号： C23C16/45565 ,  C23C8/02 ,  C23C8/34 ,  C23C8/36 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/32055

摘要： A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) is generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure.

摘要翻译： 一种具有良好电特性的电子器件（例如，高性能MOS型半导体器件）结构的制造方法，其中使用SiO 2膜或SiON膜作为具有极高的绝缘膜 薄（例如2.5nm以下）膜厚，多晶硅，非晶硅或SiGe用作电极。 在包含氧气和惰性气体的工艺气体的存在下，通过照射包括Si的晶片W产生包括氧气和惰性气体（或包含氮气和惰性气体的等离子体，或包含氮气，惰性气体和氢气的等离子体）的等离子体 作为通过平面天线构件SPA的微波的主要组件。 通过使用由此产生的等离子体在晶片表面上形成氧化膜（或氧氮化物膜），并且根据需要形成多晶硅，非晶硅或SiGe的电极，从而形成电子器件结构。

公开(公告)号：US20050233599A1

公开(公告)日：2005-10-20

申请号：US11153551

申请日：2005-06-16

申请人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

发明人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

IPC分类号： C23C8/02 ,  C23C8/34 ,  C23C8/36 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  H01L21/31 ,  H01L21/3105

CPC分类号： C23C16/45565 ,  C23C8/02 ,  C23C8/34 ,  C23C8/36 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/32055

摘要： A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) it generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure.

摘要翻译： 一种具有良好电特性的电子器件（例如，高性能MOS型半导体器件）结构的制造方法，其中使用SiO 2膜或SiON膜作为具有极高的绝缘膜 薄（例如2.5nm以下）膜厚，多晶硅，非晶硅或SiGe用作电极。 在包含氧气和惰性气体的工艺气体的存在下，包括氧气和惰性气体（或包含氮气和惰性气体的等离子体或包含氮气，惰性气体和氢气的等离子体）在内的等离子体是通过照射包括Si 作为通过平面天线构件SPA的微波的主要组件。 通过使用由此产生的等离子体在晶片表面上形成氧化膜（或氧氮化物膜），并且根据需要形成多晶硅，非晶硅或SiGe的电极，从而形成电子器件结构。

公开(公告)号：US06897149B2

公开(公告)日：2005-05-24

申请号：US10470198

申请日：2002-01-25

申请人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

发明人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L29/51 ,  H01L21/44

CPC分类号： C23C16/56 ,  C23C16/401 ,  C23C16/402 ,  H01J37/3222 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/76826 ,  H01L21/76828 ,  H01L29/517 ,  H01L29/518

摘要： A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconductor layer with excellent electrical characteristics. A substrate incorporating single-crystal silicon as a main component is CVD-treated to form an insulating layer. The substrate is then exposed to a plasma generated from a process gas by microwave radiation from a plane antenna having a plurality of slots, to thereby modify the insulating film.

摘要翻译： 一种具有绝缘层和具有优异电气特性的半导体层的高品质MOS型半导体的电子器件材料的制造方法。 以单晶硅为主要成分的基板进行CVD处理以形成绝缘层。 然后通过来自具有多个槽的平面天线的微波辐射将衬底暴露于由工艺气体产生的等离子体，从而改变绝缘膜。

公开(公告)号：US07622402B2

公开(公告)日：2009-11-24

申请号：US10509371

申请日：2003-03-31

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/31

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31645 ,  H01L21/31662 ,  H01L28/56 ,  H01L29/517 ,  H01L29/518

摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.

摘要翻译： 基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。 在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

公开(公告)号：US20080274370A1

公开(公告)日：2008-11-06

申请号：US12145971

申请日：2008-06-25

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

IPC分类号： B32B15/00 ,  B32B15/20

CPC分类号： H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3165 ,  H01L21/3185 ,  Y10T428/12736 ,  Y10T428/12806

摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

摘要翻译： 在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性 原理。 通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。 此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

公开(公告)号：US20070218687A1

公开(公告)日：2007-09-20

申请号：US11798029

申请日：2007-05-09

申请人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

发明人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

IPC分类号： H01L21/44

CPC分类号： H01L21/28185 ,  C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01J37/3222 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76828 ,  H01L29/40114 ,  H01L29/517 ,  H01L29/518

摘要： A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.

摘要翻译： 一种制造高品质MOS型半导体的电子器件材料的方法，包括绝缘层和电特性优异的半导体层。 该方法包括：将包含单晶硅作为主要成分的待处理衬底进行CVD处理，从而形成绝缘层; 以及通过经由具有多个狭缝的平面天线构件基于微波照射从处理气体产生的等离子体曝光被处理基板的步骤，由此通过使用由此产生的等离子体来修正绝缘膜 。

公开(公告)号：US5391506A

公开(公告)日：1995-02-21

申请号：US9747

申请日：1993-01-27

申请人： Yoshihide Tada ,  Hiroyasu Kunitomo

发明人： Yoshihide Tada ,  Hiroyasu Kunitomo

IPC分类号： H01L21/336 ,  H01L21/764 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L21/265 ,  H01L21/76 ,  H01L29/06

CPC分类号： H01L21/823821 ,  H01L21/764 ,  H01L21/8238 ,  H01L27/0921 ,  H01L27/0924 ,  H01L29/66575 ,  H01L29/66795 ,  H01L29/7851

摘要： A projection is formed in a substrate by anisotropic etching and a transistor is contained in the projection. The central portion of the projection covered with a gate electrode is formed as a channel region, and drain and source regions are formed on both sides of the projection by oblique ion implantation with the gate electrode as a mask. Formed below the drain, source, and channel regions is an element isolation section having the composition of the substrate intact. This eliminates the need for an oxide insulating layer below the transistor for easy manufacturing. Carriers generated in the channel region by ionization by collision can also be discharged to the substrate.

摘要翻译： 通过各向异性蚀刻在衬底中形成突起，并且晶体管被包含在突起中。 由栅极电极覆盖的突起的中心部分形成为沟道区域，并且通过以栅极电极为掩模的斜离子注入形成漏极和源极区域，并在该突起的两侧形成漏极和源极区域。 在漏极，源极和沟道区之下形成元件隔离部分，其具有完整的基板的组成。 这就不需要在晶体管下方的氧化物绝缘层，以便于制造。 通过碰撞电离在通道区域中产生的载体也可以被排出到基板。

公开(公告)号：US07662236B2

公开(公告)日：2010-02-16

申请号：US12145971

申请日：2008-06-25

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

IPC分类号： B08B3/12 ,  B08B6/00 ,  B08B7/00

CPC分类号： H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3165 ,  H01L21/3185 ,  Y10T428/12736 ,  Y10T428/12806

摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

摘要翻译： 在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性 原理。 通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。 此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

公开(公告)号：US08021987B2

公开(公告)日：2011-09-20

申请号：US12632131

申请日：2009-12-07

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/38 ,  H01L21/469

CPC分类号： H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

摘要翻译： 通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。 通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

公开(公告)号：US20100096707A1

公开(公告)日：2010-04-22

申请号：US12647902

申请日：2009-12-28

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3165 ,  H01L21/3185 ,  Y10T428/12736 ,  Y10T428/12806

摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

摘要翻译： 在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性 原理。 通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。 此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。