公开(公告)号：US08735304B2

公开(公告)日：2014-05-27

申请号：US13429742

申请日：2012-03-26

申请人： Yuichiro Morozumi ,  Takuya Sugawara ,  Koji Akiyama ,  Shingo Hishiya ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yuichiro Morozumi ,  Takuya Sugawara ,  Koji Akiyama ,  Shingo Hishiya ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02189 ,  C23C16/18 ,  C23C16/405 ,  C23C16/45529 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L28/40 ,  H01L29/66181

摘要： A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.

摘要翻译： 形成包括氧化锆膜的电介质膜的方法包括：通过提供锆材料和氧化剂在待处理的基板上形成氧化锆膜，所述锆材料包括包含结构中的环戊二烯基环的Zr化合物， 并且通过供给钛材料和氧化剂在氧化锆膜上形成氧化钛膜，所述钛材料包括结构中包含环戊二烯基环的Ti化合物。

公开(公告)号：US08336487B2

公开(公告)日：2012-12-25

申请号：US13095444

申请日：2011-04-27

申请人： Yoshihiro Ishida ,  Katsushige Harada ,  Takuya Sugawara

发明人： Yoshihiro Ishida ,  Katsushige Harada ,  Takuya Sugawara

IPC分类号： C23C16/52 ,  C23C16/40 ,  C23C16/455 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31641 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45546

摘要： The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.

摘要翻译： 本发明包括将待加工物体插入可维持真空的处理容器中，并使处理容器真空; 通过在处理容器中交替地向处理容器供给锆源和氧化剂多次，并在衬底上交替地供给硅源和氧化剂的步骤，从而在衬底上形成ZrO 2膜的顺序 进行一次或多次，其中调节每个序列的执行次数，使得膜的Si浓度为约1atm％至约4atm％; 并且通过进行一个或多个循环的成膜顺序，形成具有预定厚度的氧化锆基膜，其中一个循环表示每个ZrO 2成膜顺序和SiO 2成膜顺序重复调节次数 表演。

公开(公告)号：US08021987B2

公开(公告)日：2011-09-20

申请号：US12632131

申请日：2009-12-07

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/38 ,  H01L21/469

CPC分类号： H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

摘要翻译： 通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。 通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

公开(公告)号：US07968472B2

公开(公告)日：2011-06-28

申请号：US12536913

申请日：2009-08-06

申请人： Yoshihiro Ishida ,  Katsushige Harada ,  Takuya Sugawara

发明人： Yoshihiro Ishida ,  Katsushige Harada ,  Takuya Sugawara

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31641 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45546

摘要： The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.

摘要翻译： 本发明包括将待加工物体插入可维持真空的处理容器中，并使处理容器真空; 通过在处理容器中交替地向处理容器供给锆源和氧化剂多次，并在衬底上交替地供给硅源和氧化剂的步骤，从而在衬底上形成ZrO 2膜的顺序 进行一次或多次，其中调节每个序列的执行次数，使得膜的Si浓度为约1atm％至约4atm％; 并且通过进行一个或多个循环的成膜顺序，形成具有预定厚度的氧化锆基膜，其中一个循环表示每个ZrO 2成膜顺序和SiO 2成膜顺序重复调节次数 表演。

公开(公告)号：US07955922B2

公开(公告)日：2011-06-07

申请号：US11972989

申请日：2008-01-11

申请人： Hajime Nakabayashi ,  Takuya Sugawara ,  Takashi Kobayashi ,  Junichi Kitagawa ,  Yoshitsugu Tanaka

发明人： Hajime Nakabayashi ,  Takuya Sugawara ,  Takashi Kobayashi ,  Junichi Kitagawa ,  Yoshitsugu Tanaka

IPC分类号： H01L21/8238

CPC分类号： H01L29/66818

摘要： A method for manufacturing a fin-type field effect transistor simply and securely by using a SOI (Silicon On Insulator) wafer, capable of suppressing an undercut formation, is disclosed. The method includes forming a fin-shaped protrusion by selectively dry-etching a single crystalline silicon layer until an underlying buried oxide layer is exposed; forming a sacrificial oxide film by oxidizing a surface of the protrusion including a damage inflicted thereon; and forming a fin having a clean surface by removing the sacrificial oxide film by etching, wherein an etching rate r1 of the sacrificial oxide film is higher than an etching rate r2 of the buried oxide layer during the etching.

摘要翻译： 公开了通过使用能够抑制底切形成的SOI（硅绝缘体）晶片简单且可靠地制造鳍式场效应晶体管的方法。 该方法包括：通过选择性地干蚀刻单晶硅层形成鳍形突起，直到暴露底层掩埋氧化物层; 通过氧化所述突起的表面而形成牺牲氧化膜，所述表面包括其上的损伤; 并且通过蚀刻去除牺牲氧化膜，形成具有干净表面的翅片，其中牺牲氧化膜的蚀刻速率r1高于蚀刻期间掩埋氧化物层的蚀刻速率r2。

公开(公告)号：US20110124175A1

公开(公告)日：2011-05-26

申请号：US13055154

申请日：2009-07-08

申请人： Takuya Sugawara ,  Yoshihiro Sato

发明人： Takuya Sugawara ,  Yoshihiro Sato

IPC分类号： H01L21/02 ,  B01J19/08

CPC分类号： H01L21/76886 ,  H01L21/76849 ,  H01L21/76862 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： An alteration method of a titanium nitride film, comprising exposing a titanium nitride film formed on a semiconductor substrate to plasma obtained by exciting a process gas that includes noble gas or nitrogen and excludes oxygen, thereby increasing a specific resistance of the titanium nitride film.

摘要翻译： 氮化钛膜的改变方法，包括将形成在半导体衬底上的氮化钛膜暴露于通过激发包含惰性气体或氮气的处理气体而获得的等离子体，并排除氧气，从而增加氮化钛膜的电阻率。

公开(公告)号：US20100096707A1

公开(公告)日：2010-04-22

申请号：US12647902

申请日：2009-12-28

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3165 ,  H01L21/3185 ,  Y10T428/12736 ,  Y10T428/12806

摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

摘要翻译： 在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性 原理。 通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。 此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

公开(公告)号：US20100068896A1

公开(公告)日：2010-03-18

申请号：US12560766

申请日：2009-09-16

申请人： Takuya SUGAWARA ,  Koji YAMASHITA

发明人： Takuya SUGAWARA ,  Koji YAMASHITA

IPC分类号： H01L21/31

CPC分类号： H01L21/31155 ,  C23C14/5833 ,  C23C14/584 ,  C23C14/5853 ,  C23C16/56

摘要： A method of processing a substrate to form a thin film into which an impurity is introduced, the method including forming a thin film on the substrate; and introducing the impurity to the thin film by irradiating a gas cluster ion beam, which is generated by ionizing and accelerating a gas cluster of the impurity, onto the thin film.

摘要翻译： 一种处理衬底以形成其中引入杂质的薄膜的方法，所述方法包括在衬底上形成薄膜; 并通过将通过电离并加速杂质的气体簇产生的气体团簇离子束照射到薄膜上而将杂质引入到薄膜中。

公开(公告)号：US20070204959A1

公开(公告)日：2007-09-06

申请号：US11747289

申请日：2007-05-11

申请人： Toshio NAKANISHI ,  Takuya Sugawara ,  Seiji Matsuyama ,  Masaru Sasaki

发明人： Toshio NAKANISHI ,  Takuya Sugawara ,  Seiji Matsuyama ,  Masaru Sasaki

IPC分类号： H01L21/3065

CPC分类号： H01L21/28185 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/2236 ,  H01L21/28202 ,  H01L21/3003 ,  H01L21/3144 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/518

摘要： A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. By use of this method, it is possible to recover the degradation in the electric property of an insulating film due to a turnaround phenomenon which can occur at the time of nitriding an Si substrate, etc.

摘要翻译： 一种电子设备的处理方法，至少包括：在电子器件基板的表面上提供氮自由基的氮化步骤（a），从而在其表面上形成氮化物膜; 以及将氢自由基供给到电子器件基板的表面的氢化步骤（b）。 通过使用该方法，由于在Si衬底等的氮化时可能发生的周转现象，可以恢复绝缘膜的电性能的劣化。

公开(公告)号：US07226848B2

公开(公告)日：2007-06-05

申请号：US10500214

申请日：2002-12-25

申请人： Takuya Sugawara ,  Seiji Matsuyama ,  Masaru Sasaki

发明人： Takuya Sugawara ,  Seiji Matsuyama ,  Masaru Sasaki

IPC分类号： H01L21/322

CPC分类号： H01L21/28194 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/3003 ,  H01L27/10873 ,  H01L29/518

摘要： A method of hydrogen sintering a substrate including a semiconductor device formed thereon comprises the steps of exciting a processing gas comprising a noble gas and a hydrogen gas to form a plasma comprising hydrogen radicals and hydrogen ions, and exposing the substrate to the plasma. A preferred method comprises forming a gate insulation film on a substrate, forming a polysilicon electrode on the gate insulation film, and exposing the polysilicon electrode to an atmosphere comprising hydrogen radicals and hydrogen ions.

摘要翻译： 一种氢烧结包括形成在其上的半导体器件的衬底的方法包括以下步骤：激发包括惰性气体和氢气的处理气体，以形成包含氢自由基和氢离子的等离子体，并将衬底暴露于等离子体。 优选的方法包括在衬底上形成栅极绝缘膜，在栅极绝缘膜上形成多晶硅电极，并将多晶硅电极暴露于包含氢自由基和氢离子的气氛中。