公开(公告)号：US09140549B2

公开(公告)日：2015-09-22

申请号：US13568454

申请日：2012-08-07

申请人： Fumio Ichikawa ,  Yoichi Okumura ,  Takayuki Kikuchi

发明人： Fumio Ichikawa ,  Yoichi Okumura ,  Takayuki Kikuchi

IPC分类号： G01C19/56 ,  G01C19/5607

CPC分类号： G01C19/5607

摘要： A physical quantity detection element includes a base part, a first connection part and a second connection part respectively extending from the base part in opposite directions to each other along the X-axis, a pair of first drive vibrating arm and second drive vibrating arm and a pair of third drive vibrating arm and fourth drive vibrating arm respectively extending from the first connection part or the second connection part in opposite directions to each other along the Y-axis, a first drive detection vibrating arm and a second drive detection vibrating arm obliquely extending from the first connection part, a third drive detection vibrating arm and a fourth drive detection vibrating arm obliquely extending from the second connection part, and a first detection vibrating arm and a second detection vibrating arm respectively extending from the base part in opposite directions to each other along the Y-axis.

摘要翻译： 物理量检测元件包括基部，第一连接部和第二连接部，其分别沿着X轴相对于彼此沿相反方向从基部延伸;一对第一驱动振动臂和第二驱动振动臂， 一对第三驱动振动臂和第四驱动振动臂，其分别从所述第一连接部或所述第二连接部沿着相对于所述Y轴彼此相反的方向延伸;第一驱动检测振动臂和第二驱动检测振动臂， 从第一连接部分延伸，第三驱动检测振动臂和从第二连接部分倾斜延伸的第四驱动检测振动臂，以及第一检测振动臂和第二检测振动臂，分别从基部向相反方向延伸到 彼此沿着Y轴。

公开(公告)号：US20060197174A1

公开(公告)日：2006-09-07

申请号：US11366269

申请日：2006-03-02

申请人： Yoichi Okumura

发明人： Yoichi Okumura

IPC分类号： H01L31/06

CPC分类号： H01L31/105 ,  G01R31/275 ,  H01L31/022416

摘要： A semiconductor device is disclosed. The device has a photodiode isolated by element isolating regions (Ia, 14a, 14b) characterized by the following facts: on the principal surface of first semiconductor layer 11 of the first electroconductive type, second semiconductor layer 12 of the second electroconductive type is formed; element isolating region Ia of the first electroconductive type is formed extending through the second semiconductor layer to reach the outer layer portion of the first semiconductor layer so as to isolate the photodiode region; to the outside of the photodiode region isolated by the element isolating regions, moat region E of the second electroconductive type is formed extending through the second semiconductor layer to reach the outer layer portion of the first semiconductor layer; a voltage different from that applied to the second semiconductor layer in the photodiode region is applied to the moat region, and based on the current flowing between the moat region and the second semiconductor layer in the photodiode region, the presence/absence of an inversion layer of the second electroconductive type formed in the outer layer portion of the first semiconductor layer is detected.

摘要翻译： 公开了一种半导体器件。 器件具有通过元件隔离区（Ia，14a，14b）隔离的光电二极管，其特征在于以下事实：在第一导电类型的第一半导体层11的主表面上，第二导电类型的第二半导体层12是 形成 第一导电类型的元件隔离区域1a形成为延伸穿过第二半导体层到达第一半导体层的外层部分，以隔离光电二极管区域; 通过元件隔离区隔离的光电二极管区域的外部，形成延伸穿过第二半导体层的第二导电类型的护环区域E到达第一半导体层的外层部分; 将与光电二极管区域中的第二半导体层不同的电压施加到护环区域，并且基于在光电二极管区域中的护环区域和第二半导体层之间流动的电流，存在/不存在反转层 检测形成在第一半导体层的外层部分中的第二导电类型。

公开(公告)号：US20060046600A1

公开(公告)日：2006-03-02

申请号：US11206065

申请日：2005-08-18

申请人： Yoichi Okumura ,  Tasuku Ishibashi ,  Takashi Yamada

发明人： Yoichi Okumura ,  Tasuku Ishibashi ,  Takashi Yamada

IPC分类号： H01J9/00 ,  H01J9/24

CPC分类号： H01J9/185

摘要： A connective insulating membrane is formed on only the bottom face of the metallic partition wall. The metallic partition wall is positioned in a predetermined position on the substrate with the connective insulating membrane on the bottom face being in contact with the substrate, and a dielectric film is superimposed on the metallic partition wall. With the dielectric film, the metallic partition wall and the back glass substrate thus positioned, a burning process is performed to fuse the connective insulating film with the substrate, whereby the metallic partition wall is secured to the substrate and the metallic partition wall and the exposed faces of the substrate are covered by a dielectric membrane formed of the dielectric film.

摘要翻译： 仅在金属隔壁的底面上形成连接绝缘膜。 金属隔壁位于基板上的预定位置，底面上的连接绝缘膜与基板接触，电介质膜叠加在金属隔壁上。 通过电介质膜，金属隔壁和后玻璃基板的位置，进行燃烧处理，将连接绝缘膜与基板熔合，由此将金属隔壁固定在基板和金属隔壁上， 基板的表面被由电介质膜形成的电介质膜覆盖。

公开(公告)号：US20130036819A1

公开(公告)日：2013-02-14

申请号：US13568454

申请日：2012-08-07

申请人： Fumio ICHIKAWA ,  Yoichi OKUMURA ,  Takayuki KIKUCHI

发明人： Fumio ICHIKAWA ,  Yoichi OKUMURA ,  Takayuki KIKUCHI

IPC分类号： G01C19/56

CPC分类号： G01C19/5607

摘要： A physical quantity detection element includes a base part, a first connection part and a second connection part respectively extending from the base part in opposite directions to each other along the X-axis, a pair of first drive vibrating arm and second drive vibrating arm and a pair of third drive vibrating arm and fourth drive vibrating arm respectively extending from the first connection part or the second connection part in opposite directions to each other along the Y-axis, a first drive detection vibrating arm and a second drive detection vibrating arm obliquely extending from the first connection part, a third drive detection vibrating arm and a fourth drive detection vibrating arm obliquely extending from the second connection part, and a first detection vibrating arm and a second detection vibrating arm respectively extending from the base part in opposite directions to each other along the Y-axis.

摘要翻译： 物理量检测元件包括基部，第一连接部和第二连接部，其分别沿着X轴相对于彼此沿相反方向从基部延伸;一对第一驱动振动臂和第二驱动振动臂， 一对第三驱动振动臂和第四驱动振动臂，其分别从所述第一连接部或所述第二连接部沿着相对于所述Y轴彼此相反的方向延伸;第一驱动检测振动臂和第二驱动检测振动臂， 从第一连接部分延伸，第三驱动检测振动臂和从第二连接部分倾斜延伸的第四驱动检测振动臂，以及第一检测振动臂和第二检测振动臂，分别从基部向相反方向延伸到 彼此沿着Y轴。

公开(公告)号：US20100184247A1

公开(公告)日：2010-07-22

申请号：US12748912

申请日：2010-03-29

申请人： Yoichi Okumura ,  Ryoichi Kojima

发明人： Yoichi Okumura ,  Ryoichi Kojima

IPC分类号： H01L31/18

CPC分类号： H01L31/101 ,  H01L31/0203 ,  H01L31/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/29099

摘要： A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region 11 is formed in light-receiving region R of first semiconductor region 10. First bumps 12 are formed outside light-receiving region R. Second bump 13 is formed in a ring-shape around light-receiving region R between region R and first bumps 12. Semiconductor chip T is assembled on assembly substrate S, and resin layer 30 is formed between chip T and substrate S in the region outside of said light-receiving region R.

摘要翻译： 具有形成在其上的光电二极管的半导体芯片，包括半导体芯片的半导体器件及其制造方法。 在第一半导体区域10的光接收区域R中形成第二半导体区域11.第一凸块12形成在受光区域R的外部。第二凸块13形成在区域R之间的光接收区域R周围的环状 和第一凸块12.半导体芯片T组装在组装衬底S上，并且在所述光接收区域R外的区域中的芯片T和衬底S之间形成树脂层30。

公开(公告)号：US07714369B2

公开(公告)日：2010-05-11

申请号：US11536127

申请日：2006-09-28

申请人： Yoichi Okumura ,  Ryoichi Kojima

发明人： Yoichi Okumura ,  Ryoichi Kojima

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/148 ,  H01L29/768 ,  H01L31/00 ,  H01L31/06 ,  H01L23/06 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L31/101 ,  H01L31/0203 ,  H01L31/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/29099

摘要： A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region 11 is formed in light-receiving region R of first semiconductor region 10. First bumps 12 are formed outside light-receiving region R. Second bump 13 is formed in a ring-shape around light-receiving region R between region R and first bumps 12. Semiconductor chip T is assembled on assembly substrate S, and resin layer 30 is formed between chip T and substrate S in the region outside of said light-receiving region R.

摘要翻译： 具有形成在其上的光电二极管的半导体芯片，包括半导体芯片的半导体器件及其制造方法。 在第一半导体区域10的光接收区域R中形成第二半导体区域11.第一凸块12形成在受光区域R的外部。第二凸块13形成在区域R之间的光接收区域R周围的环状 和第一凸块12.半导体芯片T组装在组装衬底S上，并且在所述光接收区域R外的区域中的芯片T和衬底S之间形成树脂层30。

公开(公告)号：US07579858B2

公开(公告)日：2009-08-25

申请号：US12205010

申请日：2008-09-05

申请人： Yoichi Okumura

发明人： Yoichi Okumura

IPC分类号： G01R31/26 ,  H01L31/062

CPC分类号： H01L31/105 ,  G01R31/275 ,  H01L31/022416

摘要： A semiconductor device is disclosed. The device has a photodiode isolated by element isolating regions (Ia, 14a, 14b) characterized by the following facts: on the principal surface of first semiconductor layer 11 of the first electroconductive type, second semiconductor layer 12 of the second electroconductive type is formed; element isolating region Ia of the first electroconductive type is formed extending through the second semiconductor layer to reach the outer layer portion of the first semiconductor layer so as to isolate the photodiode region; to the outside of the photodiode region isolated by the element isolating regions, moat region E of the second electroconductive type is formed extending through the second semiconductor layer to reach the outer layer portion of the first semiconductor layer; a voltage different from that applied to the second semiconductor layer in the photodiode region is applied to the moat region, and based on the current flowing between the moat region and the second semiconductor layer in the photodiode region, the presence/absence of an inversion layer of the second electroconductive type formed in the outer layer portion of the first semiconductor layer is detected.

摘要翻译： 公开了一种半导体器件。 器件具有通过元件隔离区（Ia，14a，14b）隔离的光电二极管，其特征在于以下事实：在第一导电类型的第一半导体层11的主表面上形成第二导电类型的第二半导体层12; 第一导电类型的元件隔离区域1a形成为延伸穿过第二半导体层到达第一半导体层的外层部分，以隔离光电二极管区域; 通过元件隔离区隔离的光电二极管区域的外部，形成延伸穿过第二半导体层的第二导电类型的护环区域E到达第一半导体层的外层部分; 将与光电二极管区域中的第二半导体层不同的电压施加到护环区域，并且基于在光电二极管区域中的护环区域和第二半导体层之间流动的电流，存在/不存在反转层 检测形成在第一半导体层的外层部分中的第二导电类型。

公开(公告)号：US20060244380A1

公开(公告)日：2006-11-02

申请号：US11386084

申请日：2006-03-22

申请人： Masaki Yoshinari ,  Yoichi Okumura ,  Tasuku Ishibashi ,  Yoichi Shintani

发明人： Masaki Yoshinari ,  Yoichi Okumura ,  Tasuku Ishibashi ,  Yoichi Shintani

IPC分类号： H01J17/49

CPC分类号： H01J11/32 ,  H01J11/12 ,  H01J2211/245 ,  H01J2211/323 ,  H01J2211/326

摘要： In a PDP having row electrode pairs and column electrodes formed on the front glass substrate placed parallel to the back glass substrate with a discharge in between, each of the column electrodes faces a central area between adjacent transparent electrodes of the row electrode in the row direction, and is placed in a position closer to the transparent electrode serving as its partner for initiating an address discharge than to the unrelated transparent electrode located on the opposite side of the column electrode.

摘要翻译： 在具有平行于后玻璃基板放置在其间的前玻璃基板上的行电极对和列电极的PDP中，每个列电极面对行电极的相邻透明电极之间的行方向上的中心区域 并且被放置在比位于列电极的相对侧的不相关的透明电极更靠近透明电极的位置，该透明电极用作其起始寻址放电的对象。

公开(公告)号：US20060163641A1

公开(公告)日：2006-07-27

申请号：US11266988

申请日：2005-11-04

申请人： Yoichi Okumura

发明人： Yoichi Okumura

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L21/823462 ,  H01L21/823418 ,  H01L21/823493 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823892 ,  H01L21/84

摘要： A semiconductor device and method of its manufacturing method are provided for realizing smaller low voltage transistors while maintaining the characteristics of high voltage transistors. A first transistor formation region is separated by selectively leaving first element-separating insulator film. A second transistor formation region is separated by selectively oxidized second element-separating insulator film. On the region separated by first element-separating insulator film, a first transistor having a first channel-formation region, first source/drain regions, and first gate-insulation film with a first film thickness and first gate electrode are formed. On the region separated by second element-separating insulator film, second transistors having a second channel-formation region, second source/drain region second gate-insulation film with thickness thinner than the first film thickness, and a second gate electrode are formed.

摘要翻译： 提供了一种半导体器件及其制造方法，用于在保持高压晶体管的特性的同时实现更小的低电压晶体管。 通过选择性地离开第一元件分离绝缘膜来分离第一晶体管形成区域。 通过选择性氧化的第二元件分离绝缘膜分离第二晶体管形成区域。 在由第一元件分离绝缘膜隔开的区域上，形成具有第一沟道形成区域，第一源极/漏极区域和具有第一膜厚度的第一栅极绝缘膜和第一栅极电极的第一晶体管。 在由第二元件分离绝缘膜隔开的区域上形成第二晶体管，具有第二沟道形成区域，厚度比第一膜厚度薄的第二源极/漏极区域第二栅极绝缘膜和第二栅极电极。

公开(公告)号：US20050285530A1

公开(公告)日：2005-12-29

申请号：US11148182

申请日：2005-06-09

申请人： Takashi Yamada ,  Masaki Yoshinari ,  Yoichi Okumura ,  Tausuku Ishibashi

发明人： Takashi Yamada ,  Masaki Yoshinari ,  Yoichi Okumura ,  Tausuku Ishibashi

IPC分类号： H01J11/14 ,  H01J11/22 ,  H01J11/24 ,  H01J11/26 ,  H01J11/32 ,  H01J11/34 ,  H01J11/38 ,  H01J11/02

CPC分类号： H01J11/32 ,  H01J11/14 ,  H01J11/38 ,  H01J2211/323

摘要： Row electrode pairs each extending in the row direction and column electrodes each extending in the column direction are provided on the front glass substrate placed opposite the back glass substrate with the discharge space in between. The row electrode pairs and the column electrodes are covered by a first dielectric layer and a second dielectric layer so as to be separated from each other. Each of the recessed trenches is formed in a portion of the first and second dielectric layers between a transparent electrode of the row electrode and the column electrode between which an address discharge is produced in the discharge cell.

摘要翻译： 每个沿行方向延伸的行电极对和各列沿列方向延伸的列电极设置在与后玻璃基板相对放置的前玻璃基板上，其间具有放电空间。 行电极对和列电极被第一电介质层和第二电介质层覆盖以便彼此分离。 每个凹槽形成在第一和第二电介质层的一部分之间，在行电极的透明电极和列电极之间，在放电单元中产生寻址放电。