Invention Grant
- Patent Title: Semiconductor chip having a photodiode
- Patent Title (中): 具有光电二极管的半导体芯片
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Application No.: US11536127Application Date: 2006-09-28
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Publication No.: US07714369B2Publication Date: 2010-05-11
- Inventor: Yoichi Okumura , Ryoichi Kojima
- Applicant: Yoichi Okumura , Ryoichi Kojima
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Priority: JP2005-289708 20051003
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113 ; H01L27/148 ; H01L29/768 ; H01L31/00 ; H01L31/06 ; H01L23/06 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region 11 is formed in light-receiving region R of first semiconductor region 10. First bumps 12 are formed outside light-receiving region R. Second bump 13 is formed in a ring-shape around light-receiving region R between region R and first bumps 12. Semiconductor chip T is assembled on assembly substrate S, and resin layer 30 is formed between chip T and substrate S in the region outside of said light-receiving region R.
Public/Granted literature
- US20070096177A1 Semiconductor Chip Having a Photodiode, Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2007-05-03
Information query
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