METHOD FOR MANUFACTURING PIEZOELECTRIC FILM ELEMENT, AND PIEZOELECTRIC FILM ELEMENT
    8.
    发明申请
    METHOD FOR MANUFACTURING PIEZOELECTRIC FILM ELEMENT, AND PIEZOELECTRIC FILM ELEMENT 有权
    压电薄膜元件制造方法及压电薄膜元件

    公开(公告)号:US20090100656A1

    公开(公告)日:2009-04-23

    申请号:US12254921

    申请日:2008-10-21

    申请人: Xiaoxing WANG

    发明人: Xiaoxing WANG

    IPC分类号: H01L41/24 H01L41/04

    摘要: A method for manufacturing a piezoelectric film element includes foursteps. The first is to form a bottom electrode on a Si substrate. The second is to form a seed layer with a layered perovskite structure on the bottom electrode. The third is to form a Bi4Ti3O12—BaBi4Ti4O15 based piezoelectric film on the seed layer. The final step is to form an top electrode on the piezoelectric film.

    摘要翻译: 一种制造压电薄膜元件的方法包括四步。 首先是在Si衬底上形成底部电极。 第二个是在底部电极上形成层状钙钛矿结构的种子层。 第三是在种子层上形成Bi4Ti3O12-BaBi4Ti4O15基压电薄膜。 最后一步是在压电薄膜上形成顶部电极。