摘要:
A piezoelectric element includes: a first electrode formed above a base substrate; a piezoelectric layer formed above the first electrode; and a second electrode formed above the piezoelectric layer, wherein the piezoelectric layer has a plurality of voids.
摘要:
A method for forming a piezoelectric thin film includes applying a colloid solution onto a substrate, forming a dried film by drying the colloid solution, forming an inorganic film by degreasing the dried film, and crystallizing the inorganic film. The colloid solution contains lead acetate as a material of lead oxide, an organic metal compound as a material of metal oxides other than lead oxide, a carboxylic acid, and polyethylene glycol.
摘要:
Some kinds of carboxylic acids have a stabilizing effect on metal alkoxides and, in a precursor solution, are unlikely to cause a reduced storage stability and an increased viscosity of the precursor solution even when their content is increased; they can be used in the solvent component of the precursor solution. The carboxylic acid content is preferably in a range of 20% by mass to 60% by mass, both inclusive, of the total amount of the raw materials used to prepare the precursor solution. The carboxylic acid component prevents the hydrolysis due to the moisture in the air when the carboxylic acid content is equal to or more than 20% by mass. When the carboxylic acid content is equal to or less than 60% by mass, furthermore, the resulting precursor film will have a sufficiently large thickness.
摘要:
A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a firing step of firing the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C. to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C. and at a heating-up rate of 15 [° C./sec] or higher, and the firing step is performed at a heating-up rate of 100 [° C./sec] to 150 [° C./sec].