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1.发明授权公开(公告)号：US08147041B2
公开(公告)日：2012-04-03
申请号：US12611823
申请日：2009-11-03
申请人： Akira Kuriki , Koji Sumi , Tatsuo Sawasaki , Tatsuro Torimoto , Motoki Takabe
发明人： Akira Kuriki , Koji Sumi , Tatsuo Sawasaki , Tatsuro Torimoto , Motoki Takabe
CPC分类号： B41J2/161 , B41J2/1646 , B41J2002/14241 , B41J2002/14419 , B41J2202/03 , H01L41/0973 , H01L41/1876 , H01L41/318 , Y10T29/42
摘要： A piezoelectric element includes a piezoelectric film containing lead (Pb), zirconium (Zr), and titanium (Ti). The piezoelectric film has a composition satisfying the relationship of Zr/(Ti+Zr)>Ti/(Ti+Zr) and has a polarization-electric field hysteresis loop having a Pm/2Pr of 1.95 or more and a Vc(−) of −1.75 V or more, wherein Pm denotes saturation polarization, Pr denotes remanent polarization, and Vc(−) denotes a negative coercive electric field intensity.
摘要翻译： 压电元件包括含铅（Pb），锆（Zr）和钛（Ti）的压电膜。 该压电膜具有满足Zr /（Ti + Zr）> Ti /（Ti + Zr）的关系的组成，并且具有Pm / 2Pr为1.95以上的极化电场磁滞回线，Vc（ - -1.75V以上，其中Pm表示饱和极化，Pr表示剩余极化，Vc（ - ）表示负矫顽电场强度。
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2.发明申请METHOD FOR MANUFACTURING A LIQUID JET HEAD AND A METHOD FOR MANUFACTURING AN ACTUATOR APPARATUS 审中-公开制造液体喷嘴头的方法及制造执行器装置的方法公开(公告)号：US20090205176A1
公开(公告)日：2009-08-20
申请号：US12350791
申请日：2009-01-08
申请人： Akira Kuriki
发明人： Akira Kuriki
CPC分类号： B41J2/161 , B41J2/055 , B41J2/14233 , B41J2/162 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1632 , B41J2/1646 , B41J2002/14241 , B41J2002/14419 , H01L41/1876 , H01L41/318 , Y10T29/42 , Y10T29/49401
摘要： In order to improve reliability, there are provided a step of forming lower electrode 60 above the surface of a passage forming substrate wafer 110 and a step of forming a piezoelectric layer 70 including a plurality of piezoelectric films 75 above the lower electrode 60 by repeatedly performing a process of forming piezoelectric film 75 in a manner of forming a piezoelectric precursor film and sintering the piezoelectric precursor film. In the step of forming the piezoelectric layer, a temperature of the piezoelectric film 75 is dropped at a temperature drop speed of 25° C./sec or less by 100° C. from a temperature at which the piezoelectric precursor film is sintered, after the piezoelectric precursor film is sintered.
摘要翻译： 为了提高可靠性，提供了在通路形成用基板晶片110的表面的上方形成下电极60的步骤，以及通过重复执行形成包含下电极60上方的多个压电膜75的压电层70的工序 以形成压电前体膜并烧结压电前体膜的方式形成压电膜75的工艺。 在形成压电层的步骤中，压电膜75的温度以25℃/秒或更低的温度下降速率从压电前体膜烧结的温度下降到100℃之后 压电前体膜被烧结。
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公开(公告)号：US07878631B2
公开(公告)日：2011-02-01
申请号：US12408492
申请日：2009-03-20
申请人： Akira Kuriki , Yuka Yonekura
发明人： Akira Kuriki , Yuka Yonekura
IPC分类号： B41J2/045
CPC分类号： B41J2/055 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1645 , B41J2/1646 , B41J2002/14241 , B41J2002/14258 , B41J2002/14419 , H01L41/0973
摘要： A piezoelectric layer held between a first electrode on a substrate side and a second electrode formed on a surface of the piezoelectric layer facing away from the first electrode is formed of a ferroelectric material with a perovskite crystal structure, and the ratio of the surface roughness of the piezoelectric layer to the surface roughness of the first electrode falls within the range of 0.58 to 1.60.
摘要翻译： 保持在基板侧的第一电极和形成在压电层的背离第一电极的表面的第二电极之间的压电层由具有钙钛矿晶体结构的铁电材料形成，并且表面粗糙度 压电层与第一电极的表面粗糙度在0.58〜1.60的范围内。
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公开(公告)号：US07819508B2
公开(公告)日：2010-10-26
申请号：US11392757
申请日：2006-03-30
申请人： Akira Kuriki , Koji Sumi , Hironobu Kazama , Motoki Takabe , Motohisa Noguchi
发明人： Akira Kuriki , Koji Sumi , Hironobu Kazama , Motoki Takabe , Motohisa Noguchi
CPC分类号： H01L41/318 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1629 , B41J2/1632 , B41J2/1646 , B41J2002/14241 , B41J2002/14419 , C23C18/1216 , C23C18/1283 , H01L41/0973 , H01L41/1876 , Y10T29/42 , Y10T29/435 , Y10T29/49155
摘要： A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C. to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C. and at a heating-up rate of 15 [° C./sec] or higher, and the sintering step is performed at a heating-up rate of 100 [° C./sec] to 150 [° C./sec].
摘要翻译： 一种电介质膜的制造方法，其特征在于，包括：涂布包含含有构成含有至少含有铅成分的电介质膜的金属的有机金属化合物的胶体溶液以形成电介质前体膜的涂布步骤; 干燥所述电介质前体膜的干燥步骤; 脱脂步骤，使所述电介质前体膜脱脂; 以及烧结所述电介质前体膜以形成电介质膜的烧结步骤，其中所述干燥步骤包括将所述电介质前体膜加热到低于作为主要溶剂的溶剂的沸点的温度的第一干燥步骤 并将电介质前体膜在该温度下保持一定时间以干燥电介质前体膜;以及第二干燥步骤，在140℃至170℃的温度下干燥该电介质前体膜 在脱脂温度为350℃〜450℃，升温速度为15℃/秒以上的条件下进行脱脂工序，烧结工序在加热 升速率为100 [℃/秒]至150℃/秒。
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5.发明申请METHOD OF MANUFACTURING DIELECTRIC LAYER AND METHOD OF MANUFACTURING LIQUID JET HEAD 有权制造介质层的方法及制造液体喷射头的方法公开(公告)号：US20080199599A1
公开(公告)日：2008-08-21
申请号：US12101057
申请日：2008-04-10
申请人： Akira Kuriki , Hironobu Kazama , Toshinao Shinbo , Koji Sumi
发明人： Akira Kuriki , Hironobu Kazama , Toshinao Shinbo , Koji Sumi
IPC分类号： B05D5/12
CPC分类号： B41J2/161 , B41J2/1628 , B41J2/164 , C23C18/1216 , C23C18/1225 , C23C18/1245 , C23C18/1254 , C23C18/1283 , H01L41/1876 , H01L41/318 , Y10T29/42
摘要： A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.
摘要翻译： 制造电介质膜的方法包括：涂覆由有机金属化合物制成的溶胶并形成电介质前体膜的涂覆步骤，干燥电介质前体膜的干燥步骤，使电介质前体膜脱脂的脱脂步骤和烘烤 烘烤电介质前体膜以形成电介质膜的步骤。 干燥步骤包括：第一干燥步骤，通过将电介质前体膜加热到低于作为溶胶的主要溶剂的溶剂的沸点的温度，然后将电介质前体膜保持在温度为 以及第二干燥步骤，通过再次加热电介质前体膜，然后将电介质前体膜保持在该温度下进一步干燥电介质前体膜一段预定时间。
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6.发明授权Method of manufacturing dielectric layer and method of manufacturing liquid jet head 有权制造介质层的方法和制造液体喷头的方法公开(公告)号：US08003161B2
公开(公告)日：2011-08-23
申请号：US12101057
申请日：2008-04-10
申请人： Akira Kuriki , Hironobu Kazama , Toshinao Shinbo , Koji Sumi
发明人： Akira Kuriki , Hironobu Kazama , Toshinao Shinbo , Koji Sumi
IPC分类号： B05D5/12
CPC分类号： B41J2/161 , B41J2/1628 , B41J2/164 , C23C18/1216 , C23C18/1225 , C23C18/1245 , C23C18/1254 , C23C18/1283 , H01L41/1876 , H01L41/318 , Y10T29/42
摘要： A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.
摘要翻译： 制造电介质膜的方法包括：涂覆由有机金属化合物制成的溶胶并形成电介质前体膜的涂覆步骤，干燥电介质前体膜的干燥步骤，使电介质前体膜脱脂的脱脂步骤和烘烤 烘烤电介质前体膜以形成电介质膜的步骤。 干燥步骤包括：第一干燥步骤，通过将电介质前体膜加热到低于作为溶胶的主要溶剂的溶剂的沸点的温度，然后将电介质前体膜保持在温度为 以及第二干燥步骤，通过再次加热电介质前体膜，然后将电介质前体膜保持在该温度下进一步干燥电介质前体膜一段预定时间。
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公开(公告)号：US07887164B2
公开(公告)日：2011-02-15
申请号：US12404065
申请日：2009-03-13
申请人： Akira Kuriki
发明人： Akira Kuriki
IPC分类号： B41J2/045
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1629 , B41J2/1632 , B41J2/1635 , B41J2/1645 , B41J2/1646 , B41J2002/14241 , B41J2002/14419
摘要： A piezoelectric layer is formed of a plurality of ferroelectric films containing lead (Pb), zirconium (Zr), and titanium (Ti) above a first electrode. A boundary portion between a first ferroelectric film closest to the first electrode and a second ferroelectric film formed above the first ferroelectric film has an area where the maximum value of a concentration of titanium with respect to zirconium is 80% or more.
摘要翻译： 压电层由在第一电极上方含有铅（Pb），锆（Zr）和钛（Ti）的多个铁电体膜形成。 最靠近第一电极的第一铁电体膜和形成在第一铁电体膜上方的第二铁电体膜之间的边界部分具有相对于锆的钛的浓度的最大值为80％以上的面积。
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8.发明申请公开(公告)号：US20100110148A1
公开(公告)日：2010-05-06
申请号：US12611823
申请日：2009-11-03
申请人： Akira Kuriki , Koji Sumi , Tatsuo Sawasaki , Tatsuro Torimoto , Motoki Takabe
发明人： Akira Kuriki , Koji Sumi , Tatsuo Sawasaki , Tatsuro Torimoto , Motoki Takabe
CPC分类号： B41J2/161 , B41J2/1646 , B41J2002/14241 , B41J2002/14419 , B41J2202/03 , H01L41/0973 , H01L41/1876 , H01L41/318 , Y10T29/42
摘要： A piezoelectric element includes a piezoelectric film containing lead (Pb), zirconium (Zr), and titanium (Ti). The piezoelectric film has a composition satisfying the relationship of Zr/(Ti+Zr)>Ti/(Ti+Zr) and has a polarization-electric field hysteresis loop having a Pm/2Pr of 1.95 or more and a Vc(−) of −1.75 V or more, wherein Pm denotes saturation polarization, Pr denotes remanent polarization, and Vc(−) denotes a negative coercive electric field intensity.
摘要翻译： 压电元件包括含铅（Pb），锆（Zr）和钛（Ti）的压电膜。 该压电膜具有满足Zr /（Ti + Zr）> Ti /（Ti + Zr）的关系的组成，并且具有Pm / 2Pr为1.95以上的极化电场磁滞回线，Vc（ - -1.75V以上，其中Pm表示饱和极化，Pr表示剩余极化，Vc（ - ）表示负矫顽电场强度。
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公开(公告)号：US20090237465A1
公开(公告)日：2009-09-24
申请号：US12408492
申请日：2009-03-20
申请人： Akira Kuriki , Yuka Yonekura
发明人： Akira Kuriki , Yuka Yonekura
CPC分类号： B41J2/055 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1645 , B41J2/1646 , B41J2002/14241 , B41J2002/14258 , B41J2002/14419 , H01L41/0973
摘要： A piezoelectric layer held between a first electrode on a substrate side and a second electrode formed on a surface of the piezoelectric layer facing away from the first electrode is formed of a ferroelectric material with a perovskite crystal structure, and the ratio of the surface roughness of the piezoelectric layer to the surface roughness of the first electrode falls within the range of 0.58 to 1.60.
摘要翻译： 保持在基板侧的第一电极和形成在压电层的背离第一电极的表面的第二电极之间的压电层由具有钙钛矿晶体结构的铁电材料形成，并且表面粗糙度 压电层与第一电极的表面粗糙度在0.58〜1.60的范围内。
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10.发明申请Method for producing dielectric film, method for producing piezoelectric element, method for producing liquid-jet head, dielectric film, piezoelectric element, and liquid-jet apparatus 有权电介质膜的制造方法，压电元件的制造方法，液体喷射头的制造方法，电介质膜，压电元件，液体喷射装置公开(公告)号：US20060230590A1
公开(公告)日：2006-10-19
申请号：US11392757
申请日：2006-03-30
申请人： Akira Kuriki , Koji Sumi , Hironobu Kazama , Motoki Takabe , Motohisa Noguchi
发明人： Akira Kuriki , Koji Sumi , Hironobu Kazama , Motoki Takabe , Motohisa Noguchi
IPC分类号： H04R17/00
CPC分类号： H01L41/318 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1629 , B41J2/1632 , B41J2/1646 , B41J2002/14241 , B41J2002/14419 , C23C18/1216 , C23C18/1283 , H01L41/0973 , H01L41/1876 , Y10T29/42 , Y10T29/435 , Y10T29/49155
摘要： A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C. to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C. and at a heating-up rate of 15 [° C./sec] or higher, and the sintering step is performed at a heating-up rate of 100 [° C/sec] to 150 [° C./sec].
摘要翻译： 一种电介质膜的制造方法，其特征在于，包括：涂布包含含有构成含有至少含有铅成分的电介质膜的金属的有机金属化合物的胶体溶液以形成电介质前体膜的涂布步骤; 干燥所述电介质前体膜的干燥步骤; 脱脂步骤，使所述电介质前体膜脱脂; 以及烧结所述电介质前体膜以形成电介质膜的烧结步骤，其中所述干燥步骤包括将所述电介质前体膜加热到低于作为主要溶剂的溶剂的沸点的温度的第一干燥步骤 并将电介质前体膜在该温度下保持一定时间以干燥电介质前体膜;以及第二干燥步骤，在140℃至170℃的温度下干燥该电介质前体膜 在脱脂温度为350℃〜450℃，升温速度为15℃/秒以上的条件下进行脱脂工序，烧结工序在加热 升速率为100 [℃/秒]至150℃/秒。
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