公开(公告)号：US20120248551A1

公开(公告)日：2012-10-04

申请号：US13079492

申请日：2011-04-04

申请人： Peter Baars ,  Marco Lepper ,  Uwe Kahler ,  Vivien Schroeder

发明人： Peter Baars ,  Marco Lepper ,  Uwe Kahler ,  Vivien Schroeder

IPC分类号： H01L29/772 ,  H01L21/28

CPC分类号： H01L21/2855 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/32134 ,  H01L29/4958 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/7843

摘要： The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing an O2 flash while shaping gate spacers, and then cleaning and applying a second application of Aqua Regia. Embodiments include sputter depositing a layer of Ni/Pt on a semiconductor substrate, annealing the Ni/Pt layer, wet stripping unreacted Ni, annealing the Ni stripped Ni/Pt layer, stripping unreacted Pt from the annealed Ni/Pt layer, e.g., with Aqua Regia, treating the Pt stripped Ni/Pt layer with an oxygen plasma, cleaning the Ni/Pt layer, and stripping unreacted Pt from the cleaned Ni/Pt layer, e.g., with a second application of Aqua Regia.

摘要翻译： 在形成含Pt的NiSi之后剩余的Pt残余物的量通过在形成浇口间隔件的同时进行O2闪光，然后清洗并应用Aqua Regia的第二次应用来减少。 实施例包括在半导体衬底上溅射沉积Ni / Pt层，退火Ni / Pt层，湿剥离未反应的Ni，退火Ni剥离的Ni / Pt层，从退火的Ni / Pt层剥离未反应的Pt，例如， Aqua Regia，用氧等离子体处理Pt剥离的Ni / Pt层，清洁Ni / Pt层，以及从清洁的Ni / Pt层剥离未反应的Pt，例如，通过第二次应用Aqua Regia。

公开(公告)号：US20060108324A1

公开(公告)日：2006-05-25

申请号：US10995025

申请日：2004-11-22

申请人： Ronald Gottzein ,  Jens Bachmann ,  Dirk Efferenn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Wen-Bin Lin ,  Lee Donohue

发明人： Ronald Gottzein ,  Jens Bachmann ,  Dirk Efferenn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Wen-Bin Lin ,  Lee Donohue

IPC分类号： C23G1/00 ,  H01L21/302 ,  B44C1/22

CPC分类号： G03F7/427 ,  C23G5/00 ,  H01J37/32192 ,  H01J2237/3342 ,  H01L21/02071

摘要： The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presence of molecular nitrogen gas (N2); (b) a stabilization step in the presence of pure molecular nitrogen gas (N2); (c) a passivation step employing a plasma containing at least one of the group of water, nitrogen and oxygen; and (d) a stripping step containing oxygen to remove the residue, comprising resist.

摘要翻译： 本发明涉及从半导体衬底上的金属结构去除包含聚合物抗蚀剂和金属氧化物的残余物的方法，该方法包括以下步骤：（a）在分子氮存在下用金属结构加热衬底 气体（N 2/2）; （b）在纯分子氮气（N 2 O 2）存在下的稳定步骤; （c）使用包含一组水，氮和氧中的至少一种的等离子体的钝化步骤; 和（d）包含氧以除去残留物的剥离步骤，包括抗蚀剂。

公开(公告)号：US20050073046A1

公开(公告)日：2005-04-07

申请号：US10937903

申请日：2004-09-10

申请人： Uwe Kahler ,  Dirk Offenberg

发明人： Uwe Kahler ,  Dirk Offenberg

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L29/40

CPC分类号： H01L21/76877

摘要： A method for fabricating an integrated circuit device, an electrically conductive substrate being provided, an insulation layer being deposited on the substrate, the insulation layer being etched in structures, a contact-making layer being deposited on the patterned insulation layer and on the substrate in depressions which have first and second lateral dimensions, the contact-making layer being etched back in such a way that the contact-making layer is preserved in the structures with the depressions which have first lateral dimensions of the order of magnitude of the structure depth of the insulation layer and the contact-making layer is removed in the structures with depressions which have second lateral dimensions significantly greater than the structure depth of the insulation layer.

摘要翻译： 一种制造集成电路器件的方法，提供导电衬底，绝缘层沉积在衬底上，绝缘层在结构上被蚀刻，接触层沉积在图案化的绝缘层上和衬底上 凹陷具有第一和第二横向尺寸，接触层被回蚀，使接触层保留在具有第一横向尺寸为结构深度的数量级的凹陷的结构中 在具有凹陷的结构中去除绝缘层和接触层，所述凹陷具有明显大于绝缘层的结构深度的第二横向尺寸。

公开(公告)号：US08883586B2

公开(公告)日：2014-11-11

申请号：US13079492

申请日：2011-04-04

申请人： Peter Baars ,  Marco Lepper ,  Uwe Kahler ,  Vivien Schroeder

发明人： Peter Baars ,  Marco Lepper ,  Uwe Kahler ,  Vivien Schroeder

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/285 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02

CPC分类号： H01L21/2855 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/32134 ,  H01L29/4958 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/7843

摘要： The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing an O2 flash while shaping gate spacers, and then cleaning and applying a second application of Aqua Regia. Embodiments include sputter depositing a layer of Ni/Pt on a semiconductor substrate, annealing the Ni/Pt layer, wet stripping unreacted Ni, annealing the Ni stripped Ni/Pt layer, stripping unreacted Pt from the annealed Ni/Pt layer, e.g., with Aqua Regia, treating the Pt stripped Ni/Pt layer with an oxygen plasma, cleaning the Ni/Pt layer, and stripping unreacted Pt from the cleaned Ni/Pt layer, e.g., with a second application of Aqua Regia.

摘要翻译： 在形成含Pt的NiSi之后剩余的Pt残余物的量通过在形成浇口间隔件的同时进行O2闪光，然后清洗并应用Aqua Regia的第二次应用来减少。 实施例包括在半导体衬底上溅射沉积Ni / Pt层，退火Ni / Pt层，湿剥离未反应的Ni，退火Ni剥离的Ni / Pt层，从退火的Ni / Pt层剥离未反应的Pt，例如， Aqua Regia，用氧等离子体处理Pt剥离的Ni / Pt层，清洁Ni / Pt层，以及从清洁的Ni / Pt层剥离未反应的Pt，例如，通过第二次应用Aqua Regia。

公开(公告)号：US07413993B2

公开(公告)日：2008-08-19

申请号：US10995025

申请日：2004-11-22

申请人： Ronald Gottzein ,  Jens Bachmann ,  Dirk Efferenn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Wen-Bin Lin ,  Lee Donohue

发明人： Ronald Gottzein ,  Jens Bachmann ,  Dirk Efferenn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Wen-Bin Lin ,  Lee Donohue

IPC分类号： H01L21/302

CPC分类号： G03F7/427 ,  C23G5/00 ,  H01J37/32192 ,  H01J2237/3342 ,  H01L21/02071

摘要： The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presence of molecular nitrogen gas (N2); (b) a stabilization step in the presence of pure molecular nitrogen gas (N2); (c) a passivation step employing a plasma containing at least one of the group of water, nitrogen and oxygen; and (d) a stripping step containing oxygen to remove the residue, comprising resist.

摘要翻译： 本发明涉及从半导体衬底上的金属结构去除包含聚合物抗蚀剂和金属氧化物的残余物的方法，该方法包括以下步骤：（a）在分子氮存在下用金属结构加热衬底 气体（N 2/2）; （b）在纯分子氮气（N 2 O 2）存在下的稳定步骤; （c）使用包含一组水，氮和氧中的至少一种的等离子体的钝化步骤; 和（d）包含氧以除去残留物的剥离步骤，包括抗蚀剂。

公开(公告)号：US07115501B2

公开(公告)日：2006-10-03

申请号：US10937903

申请日：2004-09-10

申请人： Uwe Kahler ,  Dirk Offenberg

发明人： Uwe Kahler ,  Dirk Offenberg

IPC分类号： H01L21/4763

CPC分类号： H01L21/76877

摘要： A method for fabricating an integrated circuit device, an electrically conductive substrate being provided, an insulation layer being deposited on the substrate, the insulation layer being etched in structures, a contact-making layer being deposited on the patterned insulation layer and on the substrate in depressions which have first and second lateral dimensions, the contact-making layer being etched back in such a way that the contact-making layer is preserved in the structures with the depressions which have first lateral dimensions of the order of magnitude of the structure depth of the insulation layer and the contact-making layer is removed in the structures with depressions which have second lateral dimensions significantly greater than the structure depth of the insulation layer.

摘要翻译： 一种制造集成电路器件的方法，提供导电衬底，绝缘层沉积在衬底上，绝缘层在结构上被蚀刻，接触层沉积在图案化的绝缘层上和衬底上 凹陷具有第一和第二横向尺寸，接触层被回蚀，使接触层保留在具有第一横向尺寸为结构深度的数量级的凹陷的结构中 在具有凹陷的结构中去除绝缘层和接触层，所述凹陷具有明显大于绝缘层的结构深度的第二横向尺寸。

公开(公告)号：US07157381B2

公开(公告)日：2007-01-02

申请号：US10868309

申请日：2004-06-15

申请人： Dirk Efferenn ,  Jens Hahn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Jens Bachmann ,  Wen-Bin Lin ,  Grit Bonsdorf

发明人： Dirk Efferenn ,  Jens Hahn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Jens Bachmann ,  Wen-Bin Lin ,  Grit Bonsdorf

IPC分类号： H01L21/302

CPC分类号： H01L21/32134 ,  H01L21/76838 ,  H01L21/76849

摘要： A method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits includes the following steps: providing a substrate; providing a whisker-containing layer made of aluminum metal or an aluminum alloy on the substrate; back-etching and/or resputtering the whisker-containing layer such that the whiskers are essentially removed; and structuring the whisker-free layer into the lines.

摘要翻译： 一种在集成电路中提供无晶须的铝金属线或铝合金线的方法包括以下步骤：提供基板; 在基板上提供由铝金属或铝合金制成的含晶须层; 背面蚀刻和/或重新溅射含晶须层，使得晶须基本上被除去; 并将不含晶须的层结构化成线。

公开(公告)号：US20050277300A1

公开(公告)日：2005-12-15

申请号：US10868309

申请日：2004-06-15

申请人： Dirk Efferenn ,  Jens Hahn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Jens Bachmann ,  Wen-Bin Lin ,  Grit Bonsdorf

发明人： Dirk Efferenn ,  Jens Hahn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Jens Bachmann ,  Wen-Bin Lin ,  Grit Bonsdorf

IPC分类号： H01L21/302 ,  H01L21/3213 ,  H01L21/768

CPC分类号： H01L21/32134 ,  H01L21/76838 ,  H01L21/76849

摘要： A method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits includes the following steps: providing a substrate; providing a whisker-containing layer made of aluminum metal or an aluminum alloy on the substrate; back-etching and/or resputtering the whisker-containing layer such that the whiskers are essentially removed; and structuring the whisker-free layer into the lines.

摘要翻译： 一种在集成电路中提供无晶须的铝金属线或铝合金线的方法包括以下步骤：提供基板; 在基板上提供由铝金属或铝合金制成的含晶须层; 背面蚀刻和/或重新溅射含晶须层，使得晶须基本上被除去; 并将不含晶须的层结构化成线。