公开(公告)号：US20140295107A2

公开(公告)日：2014-10-02

申请号：US14136329

申请日：2013-12-20

申请人： Akinobu SATO ,  Akiko SUZUKI ,  Emmanuel BOURELLE ,  Jiro MATSUO ,  Toshio SEKI

发明人： Akinobu SATO ,  Akiko SUZUKI ,  Emmanuel BOURELLE ,  Jiro MATSUO ,  Toshio SEKI

IPC分类号： H01J37/317

CPC分类号： C23F4/00 ,  H01J27/026 ,  H01J37/20 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01L21/3065

摘要： A scratch or similar surface roughness in a solid surface is reduced by gas cluster ion beam irradiation. A gas-cluster-ion-beam solid surface smoothing method includes an irradiation step in which the solid surface is irradiated with a gas cluster ion beam. The irradiation step includes a process of causing clusters from a plurality of directions to collide with at least an area (spot) irradiated with the gas cluster ion beam in the solid surface. Collision of clusters from a plurality of directions with the spot can be brought about by emitting a divergent gas cluster ion beam which releases clusters in diverging directions with respect to the beam center, for example.

摘要翻译： 通过气体簇离子束照射，固体表面的划痕或类似表面粗糙度降低。 气体 - 团簇 - 离子束固体表面平滑化方法包括其中固体表面被气体团簇离子束照射的照射步骤。 照射步骤包括使来自多个方向的簇的至少一部分与固体表面中的气体簇离子束照射的区域（点）发生碰撞的处理。 可以通过发射例如相对于光束中心发散发散簇的发散气体簇离子束来产生具有点的多个方向的簇的碰撞。

公开(公告)号：US08764952B2

公开(公告)日：2014-07-01

申请号：US10573942

申请日：2004-09-29

申请人： Akinobu Sato ,  Akiko Suzuki ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki ,  Takaaki Aoki

发明人： Akinobu Sato ,  Akiko Suzuki ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki ,  Takaaki Aoki

IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  A61N5/00 ,  G21G5/00 ,  G21K5/10 ,  H01J37/08 ,  C23C14/02 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01J37/3244 ,  C23F4/00 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0812 ,  H01J2237/3151

摘要： In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle θ chosen to be something like 90° as a first step, and subsequently at an irradiation angle θ chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.

摘要翻译： 在固体表面上照射气体团簇离子束并平滑固体表面的方法中，将固体表面和气体团簇离子束之间形成的角度选择在1°和小于30°的角度之间。 在固体表面比较粗糙的情况下，通过首先以照射角照射光束来提高加工效率; 选择作为第一步的90°，随后在照射角度＆amp; 选择为1°至小于30°作为第二步。 或者，将上述第一步骤和第二步骤的组合重复多次。

公开(公告)号：US08268183B2

公开(公告)日：2012-09-18

申请号：US12312266

申请日：2007-10-30

申请人： Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

发明人： Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

IPC分类号： B44C1/22 ,  C23F1/00 ,  G21G5/00

CPC分类号： H01L21/3083 ,  H01J2237/0812 ,  H01L21/3065

摘要： A solid surface is processed while corner portions of a relief structure are protected from deformation. A method of processing a solid surface with a gas cluster ion beam includes a cluster protection layer formation step of forming, on the solid surface, a relief structure having protrusions with a cluster protection layer formed to cover an upper part thereof and recesses without the cluster protection layer; an irradiation step of emitting a gas cluster ion beam onto the solid surface having the relief structure formed in the cluster protection layer formation step; and a removal step of removing the cluster protection layer. A thickness T of the cluster protection layer satisfies T > nY + ( b 2 ⁢ Y 2 ⁢ n - nY 2 ⁡ ( b 4 - 16 ⁢ a 2 ) 1 2 2 ) 1 2 , where n is a dose of the gas cluster ion beam, and Y is an etching efficiency of the cluster protection layer, expressed as an etching volume per cluster (a and b are constants).

摘要翻译： 处理浮雕结构的角部以防止变形的实心表面。 用气体簇离子束处理固体表面的方法包括：簇保护层形成步骤，在固体表面上形成具有突起的浮雕结构，所述突起具有形成为覆盖其上部的簇保护层和没有簇的凹部 保护层; 在所述簇保护层形成工序中形成有具有所述浮雕结构的固体表面上的气体簇离子束的照射工序; 以及去除簇保护层的去除步骤。 簇保护层的厚度T满足T> nY +（b 2 Y 2 n-nY 2⁡（b 4 - 16 a 2）1 2 2）1 2，其中n是气体簇的剂量 离子束，Y是簇保护层的蚀刻效率，表示为每簇的蚀刻体积（a和b是常数）。

公开(公告)号：US08178857B2

公开(公告)日：2012-05-15

申请号：US11920362

申请日：2006-05-18

申请人： Akinobu Sato ,  Akiko Suzuki ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

发明人： Akinobu Sato ,  Akiko Suzuki ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

IPC分类号： G21G5/00

CPC分类号： H01L21/32137 ,  C23F4/00 ,  H01J2237/057 ,  H01J2237/0812 ,  H01J2237/20207 ,  H01J2237/3151 ,  H01L21/3065 ,  H01L21/31116

摘要： A method for flattening a sample surface by irradiating the sample surface with a gas cluster ion beam, generates clusters of source gas in a cluster generating chamber, ionizes the generated clusters in an ionization chamber, accelerates the ionized cluster beam in an electric field of an accelerating electrode, selects a cluster size using a magnetic field of a sorting mechanism, and irradiates the surface of a sample. An irradiation angle between the sample surface and the gas cluster ion beam is less than 30° and an average cluster size of the gas cluster ion beam is 50 or above.

摘要翻译： 通过用气体簇离子束照射样品表面来平坦化样品表面的方法，在簇生成室中产生源气体簇，将电离室中产生的簇电离，在离子化的电场中加速离子化的簇束 加速电极，使用分选机构的磁场选择簇尺寸，并照射样品的表面。 样品表面和气体团簇离子束之间的照射角度小于30°，气体团簇离子束的平均簇尺寸为50以上。

公开(公告)号：US20080315128A1

公开(公告)日：2008-12-25

申请号：US11920362

申请日：2006-05-18

申请人： Akinobu Sato ,  Akiko Suzuki ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

发明人： Akinobu Sato ,  Akiko Suzuki ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

IPC分类号： G21G5/00

CPC分类号： H01L21/32137 ,  C23F4/00 ,  H01J2237/057 ,  H01J2237/0812 ,  H01J2237/20207 ,  H01J2237/3151 ,  H01L21/3065 ,  H01L21/31116

摘要： A method for flattening a sample surface by irradiating the sample surface with a gas cluster ion beam, generates clusters of source gas in a cluster generating chamber, ionizes the generated clusters in an ionization chamber, accelerates the ionized cluster beam in an electric field of an accelerating electrode, selects a cluster size using a magnetic field of a sorting mechanism, and irradiates the surface of a sample. An irradiation angle between the sample surface and the gas cluster ion beam is less than 30° and an average cluster size of the gas cluster ion beam is 50 or above.

摘要翻译： 通过用气体簇离子束照射样品表面来平坦化样品表面的方法，在簇生成室中产生源气体簇，将电离室中产生的簇电离，在离子化的电场中加速离子化的簇束 加速电极，使用分选机构的磁场选择簇尺寸，并照射样品的表面。 样品表面和气体团簇离子束之间的照射角度小于30°，气体团簇离子束的平均簇尺寸为50以上。

公开(公告)号：US20060043317A1

公开(公告)日：2006-03-02

申请号：US11173023

申请日：2005-07-05

申请人： Shigeru Ono ,  Shinji Sasaki ,  Kenji Furusawa ,  Jiro Matsuo ,  Toshio Seki

发明人： Shigeru Ono ,  Shinji Sasaki ,  Kenji Furusawa ,  Jiro Matsuo ,  Toshio Seki

IPC分类号： H01J37/08

CPC分类号： H01J37/3053 ,  H01J2237/04756 ,  H01J2237/0812 ,  H01J2237/304

摘要： In a cluster ion beam irradiation apparatus including an apparatus for measuring size and energy distribution of gas cluster ions by using the time of flight (TOF) mass spectrometry, a unit for applying a retarding voltage is disposed in a stage preceding a TOF measuring instrument including a drift tube and a current measuring instrument. By measuring the size and energy distribution of the gas cluster ions and adjusting ionization conditions, cluster ions having predetermined energy and size are supplied to a work surface. In addition, a product of a pressure in an ion transportation device and an ion transportation length is controlled so as to satisfy the relation P×L≦30/N2/3/E1/2 Pa.m, where N is the size of gas cluster ions used for irradiation, and E is kinetic energy (eV) of the gas cluster ions.

摘要翻译： 在包括用于通过使用飞行时间（TOF）质谱法测量气体簇离子的尺寸和能量分布的装置的集束离子束照射装置中，在TOF测量仪器之前的阶段中设置用于施加延迟电压的单元，包括 漂移管和电流测量仪器。 通过测量气体团簇离子的尺寸和能量分布并调节电离条件，将具有预定能量和尺寸的簇离子供应到工作表面。 此外，控制离子输送装置中的压力和离子输送长度的乘积，以满足关系式PxL <= 30 / N 2/3 / E 1/2 Pa.m，其中N是用于照射的气体簇离子的大小，E是气体簇离子的动能（eV）。

公开(公告)号：US20050155951A1

公开(公告)日：2005-07-21

申请号：US11008606

申请日：2004-12-08

申请人： Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki ,  Takaaki Aoki

发明人： Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki ,  Takaaki Aoki

IPC分类号： H01L21/302 ,  B44C1/22 ,  G02B6/122 ,  G02B6/136 ,  H01L21/3065

CPC分类号： B82Y20/00 ,  B81C1/00531 ,  B81C1/00619 ,  G02B6/1225 ,  G02B6/136 ,  H01J2237/0812 ,  H01L21/3065

摘要： In a dry etching method in which clusters formed by agglomeration of atoms or molecules are ionized and accelerated as a cluster ion beam for irradiation of an object surface to etch away therefrom its constituent atoms, the clusters are mixed clusters 42 formed by agglomeration of two or more kinds of atoms or molecules, and the mixed clusters 42 contain atoms 43 of at least one of argon, neon, xenon and krypton, and a component 44 that is deposited on the object surface to form a thin film by reaction therewith. With this method, it is possible to provide an extremely reduced sidewall surface roughness and high vertical machining accuracy.

摘要翻译： 在干法蚀刻方法中，通过原子或分子的聚集形成的团簇被离子化并加速作为用于照射物体表面的簇离子束以从其中去除其组成原子，所述簇是通过两个或多个 更多种类的原子或分子，并且混合簇42包含氩，氖，氙和氪中的至少一种的原子43和沉积在物体表面上以通过与其反应形成薄膜的成分44。 通过这种方法，可以提供极小的侧壁表面粗糙度和高垂直加工精度。

公开(公告)号：US08461051B2

公开(公告)日：2013-06-11

申请号：US13059340

申请日：2009-08-10

申请人： Kunihiko Koike ,  Takehiko Senoo ,  Yu Yoshino ,  Shuhei Azuma ,  Jiro Matsuo ,  Toshio Seki ,  Satoshi Ninomiya

发明人： Kunihiko Koike ,  Takehiko Senoo ,  Yu Yoshino ,  Shuhei Azuma ,  Jiro Matsuo ,  Toshio Seki ,  Satoshi Ninomiya

IPC分类号： H01L21/302 ,  H01L23/20 ,  G21G5/00 ,  C23C14/32

CPC分类号： H01L21/3065 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C1/00531 ,  B81C2201/0132 ,  G02B1/00 ,  H01L21/76898

摘要： A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.

摘要翻译： 提供了使用电中性反应簇处理样品的方法。 通过从其中放置样品的真空处理室的气体喷射部分喷射由反应性气体和沸点低于反应气体的气体的混合气体喷射样品的表面 通过在混合气体未液化的范围内的压力沿预定方向，同时绝热膨胀混合气体，由此产生反应性簇并将反应性簇相对于真空处理室中的样品喷射。

公开(公告)号：US20110147896A1

公开(公告)日：2011-06-23

申请号：US13059340

申请日：2009-08-10

申请人： Kunihiko Koike ,  Takehiko Senoo ,  Yu Yoshino ,  Shuhei Azuma ,  Jiro Matsuo ,  Toshio Seki ,  Satoshi Ninomiya

发明人： Kunihiko Koike ,  Takehiko Senoo ,  Yu Yoshino ,  Shuhei Azuma ,  Jiro Matsuo ,  Toshio Seki ,  Satoshi Ninomiya

IPC分类号： H01L29/06 ,  C23F1/00 ,  H01L21/465 ,  H01L21/467 ,  C23F1/04 ,  B29D11/00 ,  H05K3/00

CPC分类号： H01L21/3065 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C1/00531 ,  B81C2201/0132 ,  G02B1/00 ,  H01L21/76898

摘要： A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.

摘要翻译： 提供了使用电中性反应簇处理样品的方法。 通过从其中放置样品的真空处理室的气体喷射部分喷射由反应性气体和沸点低于反应气体的气体的混合气体喷射样品的表面 通过在混合气体未液化的范围内的压力沿预定方向，同时绝热膨胀混合气体，由此产生反应性簇并将反应性簇相对于真空处理室中的样品喷射。

公开(公告)号：US07563379B2

公开(公告)日：2009-07-21

申请号：US11008606

申请日：2004-12-08

申请人： Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki ,  Takaaki Aoki

发明人： Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki ,  Takaaki Aoki

IPC分类号： H01L21/302

CPC分类号： B82Y20/00 ,  B81C1/00531 ,  B81C1/00619 ,  G02B6/1225 ,  G02B6/136 ,  H01J2237/0812 ,  H01L21/3065

摘要： In a dry etching method in which clusters formed by agglomeration of atoms or molecules are ionized and accelerated as a cluster ion beam for irradiation of an object surface to etch away therefrom its constituent atoms, the clusters are mixed clusters 42 formed by agglomeration of two or more kinds of atoms or molecules, and the mixed clusters 42 contain atoms 43 of at least one of argon, neon, xenon and krypton, and a component 44 that is deposited on the object surface to form a thin film by reaction therewith. With this method, it is possible to provide an extremely reduced sidewall surface roughness and high vertical machining accuracy.

摘要翻译： 在干法蚀刻方法中，通过原子或分子的聚集形成的团簇被离子化并加速作为用于照射物体表面的簇离子束以从其中去除其组成原子，所述簇是通过两个或多个 更多种类的原子或分子，并且混合簇42包含氩，氖，氙和氪中的至少一种的原子43和沉积在物体表面上以通过与其反应形成薄膜的成分44。 通过这种方法，可以提供极小的侧壁表面粗糙度和高垂直加工精度。