公开(公告)号：US09416445B2

公开(公告)日：2016-08-16

申请号：US14374728

申请日：2012-02-08

申请人： Yu Yoshino ,  Kunihiko Koike ,  Manabu Saeda ,  Toshiki Manabe

发明人： Yu Yoshino ,  Kunihiko Koike ,  Manabu Saeda ,  Toshiki Manabe

IPC分类号： C03C15/00 ,  B05D7/22 ,  C23C16/44 ,  H01L21/67 ,  C23C16/455

CPC分类号： C23C16/4404 ,  C23C16/4405 ,  C23C16/45561 ,  H01L21/67069

摘要： Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF3 in a reaction chamber during process operation.The method includes: integrally connecting a gas supply passage (2) and a gas discharge passage (3) to a processing chamber (1) of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber (1) and the gas supply passage (2) among the processing chamber (1), the gas supply passage (2), and the gas discharge passage (3), which are integrally formed, to coat the inner surfaces of at least the processing chamber (1) and the gas supply passage (2) with a fluoride film.

摘要翻译： 提供了一种处理三氟化氮供给通道的内表面的方法，其能够可靠地防止在处理操作期间反应室中ClF 3的浓度降低。 该方法包括：将气体供给通路（2）和气体排出通路（3）整体连接到使用三氟化铬作为蚀刻气体的处理装置的处理室（1） 并且在处理室（1）内的至少处理室（1）和气体供给通道（2）的内表面上施加浓度等于或高于在蚀刻处理操作期间供应的三氟化氯气体浓度的三氟化氯气体 ），气体供给通路（2）和气体排出通路（3），其一体形成，以至少将处理室（1）和气体供给通路（2）的内表面涂覆氟化膜 。

公开(公告)号：US20120247670A1

公开(公告)日：2012-10-04

申请号：US13429720

申请日：2012-03-26

申请人： Kazuya DOBASHI ,  Kensuke INAI ,  Akitaka SHIMIZU ,  Kenta YASUDA ,  Yu YOSHINO ,  Toshihiro AIDA ,  Takehiko SENOO

发明人： Kazuya DOBASHI ,  Kensuke INAI ,  Akitaka SHIMIZU ,  Kenta YASUDA ,  Yu YOSHINO ,  Toshihiro AIDA ,  Takehiko SENOO

IPC分类号： C23F1/08 ,  A47L9/08 ,  A47L5/00

CPC分类号： H01L21/67028 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/45587 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67051 ,  H01L21/67069

摘要： A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

摘要翻译： 基板清洗装置包括支撑单元，设置在具有气体排出口的处理室中，用于支撑基板; 一个或多个喷嘴单元，每个喷嘴单元用于将气体簇喷射到由支撑单元支撑的基板的周边部分，以从周边部分去除不需要的物质; 以及用于在喷射气体簇期间改变支撑单元和喷嘴单元的相对位置的移动机构。 每个喷嘴单元排出具有高于处理室中的压力的​​清洁气体，使得清洁气体被绝热膨胀以形成原子和/或分子的聚集体。

公开(公告)号：US20150041430A1

公开(公告)日：2015-02-12

申请号：US14374728

申请日：2012-02-08

申请人： Yu Yoshino ,  Kunihiko Koike ,  Manabu Saeda ,  Toshiki Manabe

发明人： Yu Yoshino ,  Kunihiko Koike ,  Manabu Saeda ,  Toshiki Manabe

IPC分类号： C23C16/44 ,  H01L21/67

CPC分类号： C23C16/4404 ,  C23C16/4405 ,  C23C16/45561 ,  H01L21/67069

摘要： Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF3 in a reaction chamber during process operation.The method includes: integrally connecting a gas supply passage (2) and a gas discharge passage (3) to a processing chamber (1) of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber (1) and the gas supply passage (2) among the processing chamber (1), the gas supply passage (2), and the gas discharge passage (3), which are integrally formed, to coat the inner surfaces of at least the processing chamber (1) and the gas supply passage (2) with a fluoride film.

摘要翻译： 提供了一种处理三氟化氮供给通道的内表面的方法，其能够可靠地防止在处理操作期间反应室中ClF 3的浓度降低。 该方法包括：将气体供给通路（2）和气体排出通路（3）整体连接到使用三氟化铬作为蚀刻气体的处理装置的处理室（1） 并且在处理室（1）内的至少处理室（1）和气体供给通道（2）的内表面上施加浓度等于或高于在蚀刻处理操作期间供应的三氟化氯气体浓度的三氟化氯气体， ），气体供给通路（2）和气体排出通路（3），其一体形成，以至少将处理室（1）和气体供给通路（2）的内表面涂覆氟化膜 。

公开(公告)号：US08461051B2

公开(公告)日：2013-06-11

申请号：US13059340

申请日：2009-08-10

申请人： Kunihiko Koike ,  Takehiko Senoo ,  Yu Yoshino ,  Shuhei Azuma ,  Jiro Matsuo ,  Toshio Seki ,  Satoshi Ninomiya

发明人： Kunihiko Koike ,  Takehiko Senoo ,  Yu Yoshino ,  Shuhei Azuma ,  Jiro Matsuo ,  Toshio Seki ,  Satoshi Ninomiya

IPC分类号： H01L21/302 ,  H01L23/20 ,  G21G5/00 ,  C23C14/32

CPC分类号： H01L21/3065 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C1/00531 ,  B81C2201/0132 ,  G02B1/00 ,  H01L21/76898

摘要： A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.

摘要翻译： 提供了使用电中性反应簇处理样品的方法。 通过从其中放置样品的真空处理室的气体喷射部分喷射由反应性气体和沸点低于反应气体的气体的混合气体喷射样品的表面 通过在混合气体未液化的范围内的压力沿预定方向，同时绝热膨胀混合气体，由此产生反应性簇并将反应性簇相对于真空处理室中的样品喷射。

公开(公告)号：US20110147896A1

公开(公告)日：2011-06-23

申请号：US13059340

申请日：2009-08-10

申请人： Kunihiko Koike ,  Takehiko Senoo ,  Yu Yoshino ,  Shuhei Azuma ,  Jiro Matsuo ,  Toshio Seki ,  Satoshi Ninomiya

发明人： Kunihiko Koike ,  Takehiko Senoo ,  Yu Yoshino ,  Shuhei Azuma ,  Jiro Matsuo ,  Toshio Seki ,  Satoshi Ninomiya

IPC分类号： H01L29/06 ,  C23F1/00 ,  H01L21/465 ,  H01L21/467 ,  C23F1/04 ,  B29D11/00 ,  H05K3/00

CPC分类号： H01L21/3065 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C1/00531 ,  B81C2201/0132 ,  G02B1/00 ,  H01L21/76898

摘要： A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.

摘要翻译： 提供了使用电中性反应簇处理样品的方法。 通过从其中放置样品的真空处理室的气体喷射部分喷射由反应性气体和沸点低于反应气体的气体的混合气体喷射样品的表面 通过在混合气体未液化的范围内的压力沿预定方向，同时绝热膨胀混合气体，由此产生反应性簇并将反应性簇相对于真空处理室中的样品喷射。

公开(公告)号：US09214364B2

公开(公告)日：2015-12-15

申请号：US13429720

申请日：2012-03-26

申请人： Kazuya Dobashi ,  Kensuke Inai ,  Akitaka Shimizu ,  Kenta Yasuda ,  Yu Yoshino ,  Toshihiro Aida ,  Takehiko Senoo

发明人： Kazuya Dobashi ,  Kensuke Inai ,  Akitaka Shimizu ,  Kenta Yasuda ,  Yu Yoshino ,  Toshihiro Aida ,  Takehiko Senoo

IPC分类号： H01L21/67 ,  C23C16/455 ,  H01J37/32

CPC分类号： H01L21/67028 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/45587 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67051 ,  H01L21/67069

摘要： A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

摘要翻译： 基板清洗装置包括支撑单元，设置在具有气体排出口的处理室中，用于支撑基板; 一个或多个喷嘴单元，每个喷嘴单元用于将气体簇喷射到由支撑单元支撑的基板的周边部分，以从周边部分去除不需要的物质; 以及用于在喷射气体簇期间改变支撑单元和喷嘴单元的相对位置的移动机构。 每个喷嘴单元排出具有高于处理室中的压力的​​清洁气体，使得清洁气体被绝热膨胀以形成原子和/或分子的聚集体。

公开(公告)号：US20120071003A1

公开(公告)日：2012-03-22

申请号：US13233150

申请日：2011-09-15

申请人： Kazuya Dobashi ,  Takashi Fuse ,  Satohiko Hoshino ,  Takehiko Senoo ,  Yu Yoshino

发明人： Kazuya Dobashi ,  Takashi Fuse ,  Satohiko Hoshino ,  Takehiko Senoo ,  Yu Yoshino

IPC分类号： H01L21/31 ,  C23C14/16 ,  C23F1/08 ,  C23C14/34 ,  C23C16/455 ,  C23C16/48

CPC分类号： H01L21/306 ,  C23C14/02 ,  C23C14/165 ,  C23C14/568 ,  H01M4/0421 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/386 ,  H01M10/0525

摘要： Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged from the nozzle part under a vacuum atmosphere. By doing this, the mixed gas is adiabatically expanded and the Ar atoms or ClF3 molecules are combined, which become a gas cluster. The gas cluster is irradiated to the surface of the silicon substrate without being ionized and, as a result, the surface of the silicon surface becomes a porous state. Then, lithium is grown on the surface of the silicon substrate in a separate vacuum chamber 41 by sputtering without breaking the vacuum.

摘要翻译： 公开了一种技术，其中喷嘴部分安装在真空室中，并且硅衬底被保持以面对喷嘴部分的排放孔。 例如，从喷嘴部供给ClF 3气体和Ar气体，在真空气氛下从喷嘴部排出混合气体。 通过这样做，混合气体绝热膨胀，Ar原子或ClF3分子结合成为气体簇。 将气体簇照射到硅衬底的表面而不被电离，结果，硅表面变成多孔状态。 然后，通过溅射在单独的真空室41中在硅衬底的表面上生长锂，而不破坏真空。