Pulsed valve manifold for atomic layer deposition
    1.
    发明授权
    Pulsed valve manifold for atomic layer deposition 有权
    用于原子层沉积的脉冲阀歧管

    公开(公告)号:US09574268B1

    公开(公告)日:2017-02-21

    申请号:US13284738

    申请日:2011-10-28

    IPC分类号: C23C16/455 C23C16/453

    摘要: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

    摘要翻译: 气相沉积装置包括反应器,该反应器包括反应室和用于将蒸汽注入反应室的喷射器。 该装置还包括用于将蒸气输送到喷射器的歧管。 歧管包括具有内孔的歧管主体,在与所述孔的纵向轴线相交的平面内设置在所述主体内的第一分配通道,以及设置在所述主体内并与所述第一分配通道流动连通的多个供应通道,以及 与孔。 每个第一供应通道相对于孔的纵向轴线以锐角设置,并且每个供应通道在与纵向轴线不同的角度位置处与孔连通。 分配通道(因此,供应通道)可以与常见的反应物源连接。 还描述了相关的沉积方法。

    Susceptor heater shim
    3.
    发明授权
    Susceptor heater shim 有权
    受体加热器垫片

    公开(公告)号:US09202727B2

    公开(公告)日:2015-12-01

    申请号:US13411271

    申请日:2012-03-02

    摘要: A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder.

    摘要翻译: 反应空间中的基板支撑组件包括加热器,基板支撑构件和位于加热器和基板支撑构件之间的垫片。 垫片可以可拆卸地固定在加热器和衬底支撑构件之间。 垫片还可包括限定间隙周长的内表面。 间隙可以由衬底支撑构件的底表面和加热器的顶表面进一步限定。 衬底支撑构件还可以包括位于衬底支撑位置的径向外侧的肩部,并且其中垫片内表面与衬底支撑构件肩部径向对准。

    SUSCEPTOR HEATER SHIM
    5.
    发明申请
    SUSCEPTOR HEATER SHIM 有权
    SUSCEPTOR加热器SHIM

    公开(公告)号:US20130230814A1

    公开(公告)日:2013-09-05

    申请号:US13411271

    申请日:2012-03-02

    IPC分类号: F27D3/00 F27D5/00

    摘要: A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder.

    摘要翻译: 反应空间中的基板支撑组件包括加热器,基板支撑构件和位于加热器和基板支撑构件之间的垫片。 垫片可以可拆卸地固定在加热器和衬底支撑构件之间。 垫片还可包括限定间隙周长的内表面。 间隙可以由衬底支撑构件的底表面和加热器的顶表面进一步限定。 衬底支撑构件还可以包括位于衬底支撑位置的径向外侧的肩部,并且其中垫片内表面与衬底支撑构件肩部径向对准。

    Reflex training and improvement system
    6.
    发明授权
    Reflex training and improvement system 有权
    反射训练和改进系统

    公开(公告)号:US08251818B1

    公开(公告)日:2012-08-28

    申请号:US12869954

    申请日:2010-08-27

    IPC分类号: A63F13/00

    摘要: A reflex training system operates on a computer or other processing system, having hand and foot controls for response to stimuli. The use of a computer allows the system to be portable and used in a variety of locations. The system is highly configurable and can be used for training for individuals having different needs and at different levels. The configurability relates to the types of stimuli presented to the user, the types of responses required by the user, and the characteristics of different levels. The system provides a variety of reports relating to performance so that progress can be reviewed. The system can be operated on-line to create a community of users.

    摘要翻译: 反射训练系统在计算机或其他处理系统上操作,具有用于响应于刺激的手和脚控制。 使用计算机允许系统可移植并在各种位置使用。 该系统是高度可配置的,可以用于具有不同需求和不同级别的个人的培训。 可配置性涉及呈现给用户的刺激类型,用户所需的响应类型以及不同级别的特征。 该系统提供了与性能有关的各种报告,以便对进度进行审查。 该系统可以在线运行,以创建一个用户社区。

    Susceptor heater and method of heating a substrate
    7.
    发明授权
    Susceptor heater and method of heating a substrate 有权
    受体加热器和加热基材的方法

    公开(公告)号:US08933375B2

    公开(公告)日:2015-01-13

    申请号:US13535214

    申请日:2012-06-27

    IPC分类号: F27B5/14 F26B19/00

    摘要: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

    摘要翻译: 晶片处理装置可以包括具有顶侧和背面的基座,具有间隔构件和加热构件的基座加热器,可移除地安装在基座和基座加热器之间的垫片,由基座背面形成的空腔,基座 加热器和垫片,与空腔连通的流体入口以及与空腔连通的多个流体出口。

    SUSCEPTOR HEATER AND METHOD OF HEATING A SUBSTRATE
    8.
    发明申请
    SUSCEPTOR HEATER AND METHOD OF HEATING A SUBSTRATE 有权
    SUSCEPTOR加热器和加热基材的方法

    公开(公告)号:US20140000843A1

    公开(公告)日:2014-01-02

    申请号:US13535214

    申请日:2012-06-27

    IPC分类号: H01L21/324 F28F7/00

    摘要: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

    摘要翻译: 晶片处理装置可以包括具有顶侧和背面的基座,具有间隔构件和加热构件的基座加热器,可移除地安装在基座和基座加热器之间的垫片,由基座背面形成的空腔,基座 加热器和垫片,与空腔连通的流体入口以及与空腔连通的多个流体出口。