公开(公告)号：US09337093B2

公开(公告)日：2016-05-10

申请号：US13182944

申请日：2011-07-14

申请人： Daisuke Oshida ,  Ippei Kume ,  Makoto Ueki ,  Manabu Iguchi ,  Naoya Inoue ,  Takuya Maruyama ,  Toshiji Taiji ,  Hirokazu Katsuyama

发明人： Daisuke Oshida ,  Ippei Kume ,  Makoto Ueki ,  Manabu Iguchi ,  Naoya Inoue ,  Takuya Maruyama ,  Toshiji Taiji ,  Hirokazu Katsuyama

IPC分类号： H01L21/283 ,  H01L21/768 ,  H01L21/3105 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/76883 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/3105 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.

摘要翻译： 半导体器件包括使用具有六元环结构的环状硅氧烷作为原料形成的绝缘膜; 在绝缘膜中形成的沟槽; 以及由嵌入在沟槽中的金属膜构成的互连。 在半导体装置中，在沟槽的底面上形成改性层，其中每单位体积的碳原子数和/或氮原子数大于绝缘膜内部。

公开(公告)号：US20120015517A1

公开(公告)日：2012-01-19

申请号：US13182944

申请日：2011-07-14

申请人： Daisuke OSHIDA ,  Ippei KUME ,  Makoto UEKI ,  Manabu IGUCHI ,  Naoya INOUE ,  Takuya MARUYAMA ,  Toshiji TAIJI ,  Hirokazu KATSUYAMA

发明人： Daisuke OSHIDA ,  Ippei KUME ,  Makoto UEKI ,  Manabu IGUCHI ,  Naoya INOUE ,  Takuya MARUYAMA ,  Toshiji TAIJI ,  Hirokazu KATSUYAMA

IPC分类号： H01L21/283

CPC分类号： H01L21/76883 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/3105 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.

摘要翻译： 半导体器件包括使用具有六元环结构的环状硅氧烷作为原料形成的绝缘膜; 在绝缘膜中形成的沟槽; 以及由嵌入在沟槽中的金属膜构成的互连。 在半导体装置中，在沟槽的底面上形成改性层，其中每单位体积的碳原子数和/或氮原子数大于绝缘膜内部。

公开(公告)号：US08854156B2

公开(公告)日：2014-10-07

申请号：US13202442

申请日：2010-02-17

申请人： Kazuki Iwashita ,  Hiroshi Tsuchiya ,  Kensuke Tanaka ,  Takuya Maruyama

发明人： Kazuki Iwashita ,  Hiroshi Tsuchiya ,  Kensuke Tanaka ,  Takuya Maruyama

IPC分类号： H03H9/15 ,  H03H9/54 ,  H03H9/17 ,  H03H9/02 ,  H03H9/60 ,  H03H3/02

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/02133 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/605

摘要： A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region. The resonance frequency of the primary thickness-longitudinal vibration of the vibration region (40) is f1 at the first vibration region, is f2 at the third vibration region, wherein f1 and f2 satisfy a relationship of f1

摘要翻译： 1.一种薄膜压电谐振器，包括基板（6）; 压电层（2），具有顶部电极（10）和底部电极（8）的压电谐振器叠层（12）和空腔（4）。 压电谐振器叠层（12）具有顶部电极和底部电极在厚度方向上重叠的振动区域（40），振动区域包括第一振动区域，第二振动区域和第三振动区域。 当从厚度方向观察时，第一振动区域存在于最外侧，第三振动区域存在于最内侧并且不与第一振动区域接触，并且第二振动区域介于第一振动区域和第二振动区域之间， 第三振动区域。 振动区域（40）的初始厚度 - 纵向振动的共振频率在第一振动区域为f1，在第三振动区域为f2，其中f1和f2满足f1

公开(公告)号：US20110298564A1

公开(公告)日：2011-12-08

申请号：US13202442

申请日：2010-02-17

申请人： Kazuki Iwashita ,  Hiroshi Tsuchiya ,  Kensuke Tanaka ,  Takuya Maruyama

发明人： Kazuki Iwashita ,  Hiroshi Tsuchiya ,  Kensuke Tanaka ,  Takuya Maruyama

IPC分类号： H03H9/17 ,  H01L41/047 ,  H01L41/18 ,  H01L41/04

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/02133 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/605

摘要： A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region. The resonance frequency of the primary thickness-longitudinal vibration of the vibration region (40) is f1 at the first vibration region, is f2 at the third vibration region, wherein f1 and f2 satisfy a relationship of f1

摘要翻译： 1.一种薄膜压电谐振器，包括基板（6）; 压电层（2），具有顶部电极（10）和底部电极（8）的压电谐振器叠层（12）和空腔（4）。 压电谐振器叠层（12）具有顶部电极和底部电极在厚度方向上重叠的振动区域（40），振动区域包括第一振动区域，第二振动区域和第三振动区域。 当从厚度方向观察时，第一振动区域存在于最外侧，第三振动区域存在于最内侧并且不与第一振动区域接触，并且第二振动区域介于第一振动区域和第二振动区域之间， 第三振动区域。 振动区域（40）的初始厚度 - 纵向振动的共振频率在第一振动区域为f1，在第三振动区域为f2，其中f1和f2满足f1

公开(公告)号：US07199058B2

公开(公告)日：2007-04-03

申请号：US10767229

申请日：2004-01-29

申请人： Takuya Maruyama ,  Nobuaki Hamanaka

发明人： Takuya Maruyama ,  Nobuaki Hamanaka

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/7681 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76807

摘要： Precision in an etching process is to be improved. A detecting unit 404 detects a variation of plasma emission intensity at a plurality of wavelengths (an emission band having an intensity peak in the proximity of 358 nm and an emission band having an intensity peak in the proximity of 387 nm) during a dry etching process being performed on either of a nitrogen-containing film formed on a semiconductor substrate or a non-nitrogen film provided in direct contact with the nitrogen-containing film in an etching apparatus 402. An arithmetic processing unit 406 performs calculation based on detected variation. A control unit 410 determines an endpoint of the dry etching process in consideration of the calculation result.

摘要翻译： 蚀刻工艺中的精度要提高。 检测单元404在干蚀刻处理期间检测多个波长处的等离子体发射强度的变化（在358nm附近具有强度峰值的发射带和在387nm附近具有强度峰值的发射带）的变化 在形成在半导体衬底上的含氮膜或在与蚀刻装置402中的与含氮膜直接接触的非氮膜中的任一种上进行。算术处理单元406基于检测到的变化进行计算。 考虑到计算结果，控制单元410确定干蚀刻工艺的端点。