Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13182944Application Date: 2011-07-14
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Publication No.: US09337093B2Publication Date: 2016-05-10
- Inventor: Daisuke Oshida , Ippei Kume , Makoto Ueki , Manabu Iguchi , Naoya Inoue , Takuya Maruyama , Toshiji Taiji , Hirokazu Katsuyama
- Applicant: Daisuke Oshida , Ippei Kume , Makoto Ueki , Manabu Iguchi , Naoya Inoue , Takuya Maruyama , Toshiji Taiji , Hirokazu Katsuyama
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2010-160825 20100715
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L21/768 ; H01L21/3105 ; H01L23/532 ; H01L21/02
Abstract:
The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.
Public/Granted literature
- US20120015517A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-01-19
Information query
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