Abstract:
The various embodiments disclosed herein utilize multiple lasers that have different wavelengths and a single detection path. The lasers are mounted orthogonal to one another so that one laser will provide a forward angle light scatter (FALS) signal in the detection path, and one laser will provide a side scatter signal in the detection path (i.e., the single detection optics are approximately in-line with the FALS laser and approximately orthogonal to the side scatter laser). The single detector path spectrally separates the forward and side scatter signals prior to applying them to their respective detectors for measurement.
Abstract:
A damper having an elastic body formed from a cross-linking product of an EPDM composition, which comprises (a) 100 parts by weight of at least one kind of EPDM, whose propylene content in sum total of ethylene and propylene in the copolymerization rubber is 35-50 wt. %, the EPDM having a Mooney viscosity (ML100) of not less than 40, (b) 5-50 parts by weight of α-olefin oligomer, which is a polymer of α-olefin represented by the general formula, CH2CHR, where R is an alkyl group having 3-12 carbon atoms, with a number average molecular weight Mn of 300-1,400 and (c) 1-10 parts by weight of an organic peroxide cross-linking agent.
Abstract:
According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first and second semiconductor layers and a light emitting layer. The first electrode includes a first region, a second region, and a third region provided between them. The first semiconductor layer includes a first portion on the first region and a second portion on the second region. The light emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and a sixth portion on the fourth portion. The insulating layer is provided between the first and second portions on the third region and between the third and fourth portions. The second electrode includes a seventh portion provided on the insulating layer, eighth and ninth portions contacting side surfaces of the fifth and sixth portions.
Abstract:
A chain tensioner device having a first slide surface of a main arm pivotably supported at an upper end thereof, and a second slide surface of a sub-arm pivotably supported at a lower end thereof. The first and second slide surfaces slidably abut against each other. When the main arm is biased toward a timing chain via the sub-arm by a biasing force of a plunger of a tensioner lifter, a stroke of the main arm is increased with respect to a stroke of the plunger.
Abstract:
A seat sliding device allows a vehicle seat to be positioned in the vehicle front back direction. The seat sliding device includes a pair of rail units aligned in the lateral direction of the seat. Each of the rail units includes a first rail member, which is attached to a seat mounting surface, and a second rail member, which is attached to the seat. Three rollers are arranged in each rail unit, and the second rail member is supported on the first rail member at three points by the three rollers.
Abstract:
According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Alx1Ga1-x1-y1Iny1N (0
Abstract translation:根据一个实施例,半导体发光器件包括第一层,第二层和发光部分。 第一层包括n型GaN和n型AlGaN中的至少一种。 第二层包括p型AlGaN。 发光部分具有单个量子阱结构。 单量子阱结构包括第一阻挡层,第二阻挡层和阱层。 第一阻挡层设置在第一层和第二层之间,并且包括Al x Ga 1-x-y 1 In y 1 N(0
Abstract:
A fine particle measuring device includes an optical filter that is divided into a plurality of areas and is disposed on an optical path on which light emitted from a fine particle, which is irradiated with light, is guided to an optical detector. In the fine particle measuring device, the optical filter includes a first area having wavelength selectivity by which the first area blocks reflected light from the fine particle and an unnecessary scattered light component and transmits fluorescence, and a second area that is disposed around at least the first area and has no wavelength selectivity so as to transmit a necessary scattered light component.
Abstract:
According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light-emitting layer, a third semiconductor layer and a first electrode. The light-emitting layer is provided between the first and second semiconductor layers. The third semiconductor layer is provided on opposite side of the first semiconductor layer from the light-emitting layer, has a lower impurity concentration than the first semiconductor layer, and includes an opening exposing part of the first semiconductor layer. The first electrode is in contact with the first semiconductor layer through the opening. The third semiconductor layer further includes a rough surface portion which is provided on opposite side from the first semiconductor layer and includes a surface asperity larger than wavelength in the third semiconductor layer of peak wavelength of emission light emitted from the light-emitting layer.
Abstract:
A chain tensioner device having a first slide surface of a main arm pivotably supported at an upper end thereof, and a second slide surface of a sub-arm pivotably supported at a lower end thereof. The first and second slide surfaces slidably abut against each other. When the main arm is biased toward a timing chain via the sub-arm by a biasing force of a plunger of a tensioner lifter, a stroke of the main arm is increased with respect to a stroke of the plunger.
Abstract:
According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity. The first electrode is in contact with the first surface asperity through the opening, and reflective to emission light emitted from the light-emitting layer.