Water-absorbing hydrogel and method for producing the same

    公开(公告)号:US12227623B2

    公开(公告)日:2025-02-18

    申请号:US16495020

    申请日:2018-03-14

    Inventor: Yoshihiro Kudo

    Abstract: A hydrogel that exhibits excellent water absorbency even when dried, and has flexibility, shape stability, and shape retention properties, and a method for producing the hydrogel. A hydrogel comprising a water-soluble organic polymer, a silicate, a dispersant for the silicate, and a water-absorbing polymer. A method for producing a hydrogel including a formation step of forming a hydrogel comprising a water-soluble organic polymer, a silicate, a dispersant for the silicate, a water-absorbing polymer, and at least one solvent selected from the group having water and a water-soluble organic solvent, and as an optical step, a solvent removal step of removing a portion of the solvent in the hydrogel.

    WAFER EDGE PROTECTIVE FILM-FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING

    公开(公告)号:US20250014901A1

    公开(公告)日:2025-01-09

    申请号:US18688610

    申请日:2022-09-01

    Abstract: Provided are a protective film that can completely cover the edge of a substrate (wafer) for semiconductor manufacturing via a simple coating method in the manufacture of a semiconductor device, a protective film-forming composition for forming the protective film, a wafer for semiconductor manufacturing that is manufactured using the protective film, and a method for manufacturing the wafer for semiconductor manufacturing and a semiconductor device. Also provided is a wafer edge protective film-forming composition for semiconductor manufacturing, the composition containing a solvent and a polymer or compound having a crosslinkable group. Preferably, the composition has a viscosity of 100 cps or less at 25° C. and is photosensitive. Preferably, the crosslinkable group is selected from the group consisting of an epoxy group, a (meth)acrylic group, a vinyl group, a carboxylic acid group, a thiol group, a silanol group, a cinnamoyl group, and a hydroxyl group.

    Method for producing coating film-forming composition for lithography

    公开(公告)号:US12153348B2

    公开(公告)日:2024-11-26

    申请号:US17296408

    申请日:2019-12-18

    Abstract: A method for producing a coating film-forming composition for lithography, including a step for passing a liquid through a filter cartridge. The filter cartridge is obtained by layering more than one type of filtration base fabrics or winding same around a hollow inner tube, wherein: the fabrics are non-woven fabrics in which metal-adsorbing groups are chemically bonded to polyolefin fibers; the fabrics contain non-woven fabric layers A and B; layer A is configured from polyolefin fibers to which sulfonic acid groups are chemically bonded as metal-adsorbing groups; and layer B is configured from polyolefin fibers to which at least one type selected from among amino groups, N-methyl-D-glucamine groups, iminodiacetic acid groups, iminodiethanol groups, amidoxime groups, phosphoric acid groups, carboxylic acid groups and ethylenediamine triacetic acid groups chemically bonded as metal-adsorbing groups. Thus, the amount of metal impurities that are the cause of minute defects on a wafer can be reduced.

    PRIMER FOR SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING A PATTERN

    公开(公告)号:US20240385521A1

    公开(公告)日:2024-11-21

    申请号:US18785814

    申请日:2024-07-26

    Abstract: A surface modifier for a resist pattern, which is to be applied to a substrate prior to the formation of a resist pattern with a thickness of 0.10 μm or less on the substrate to thereby enhance the adhesion between the substrate and the resist pattern, including at least one member selected from among a compound represented by average compositional formula (1), a hydrolysate thereof and a hydrolytic condensate thereof: R1aR2b(OX)cSiO(4−a−b−c)/2 (1), wherein: R1 represents a —(CH2)nY group; Y represents a cyclohexenyl group, etc.; n is an integer of 0-4; R2 represents a monovalent C1-4 hydrocarbon group; X represents a hydrogen atom or a monovalent C1-4 hydrocarbon group; a is a numerical value of 1-2; b is a numerical value of 0-1; and c is a numerical value of 0-2, provided that a+b+c is not greater than 4.

    COMPOSITION FOR FORMING THIN FILM FOR ENERGY STORAGE DEVICE ELECTRODE

    公开(公告)号:US20240379967A1

    公开(公告)日:2024-11-14

    申请号:US18287409

    申请日:2022-03-28

    Abstract: Provided is a composition, which is for forming a thin film for an energy storage device electrode and contains a conductive carbon material, a heterocyclic compound containing at least two nitrogen atoms constituting a ring, a dispersant, and a solvent, as a composition which is for forming a thin film for an energy storage device electrode and can be suitably used for forming a conductive thin film, and from which an undercoat layer exhibiting the effect of suppressing migration can be provided, in particular, in an energy storage device.

    COMPOSITION FOR FORMING OPTICAL WAVEGUIDE
    9.
    发明公开

    公开(公告)号:US20240317928A1

    公开(公告)日:2024-09-26

    申请号:US18575497

    申请日:2022-06-28

    CPC classification number: C08G59/245 C08G59/226 C08G59/687 G02B1/048

    Abstract: A composition which can resolve the conflicting relationship between patternability, film formability, and high refractive index required for an optical waveguide-forming composition, and which can satisfy these requirements. The optical waveguide-forming composition including: a fluorene skeleton-containing epoxy compound (A) of the following Formula [1]:




    (in Formula [1], L1 and L2 are each independently a naphthalenediyl group possibly having a substituent; and m and n are each independently an integer of 0 to 10); a monofunctional or bifunctional alicyclic epoxy compound (B); a monofunctional or bifunctional aromatic epoxy compound (C) different from the compound (A); and a photoacid generator (D), and an optical waveguide including a cured product of the optical waveguide-forming composition.

    Resist underlayer film-forming composition including reaction product of acid dianhydride

    公开(公告)号:US12099303B2

    公开(公告)日:2024-09-24

    申请号:US18271383

    申请日:2022-01-26

    CPC classification number: G03F7/11 C08G59/3245 C09D163/00 H01L21/0274

    Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A resist underlayer film-forming composition includes a solvent and a polymer having a unit structure represented by formula (I):




    (in formula (I), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, a methyl group, or an ethyl group, Q1 represents a divalent organic group, R1 represents a tetravalent organic group including a C6-40 aromatic ring structure, and L1 and L2 each independently represent a hydrogen atom or a C1-10 alkyl group optionally substituted with a hydroxy group and optionally interrupted by an oxygen atom).

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