公开(公告)号：US11319514B2

公开(公告)日：2022-05-03

申请号：US16490843

申请日：2018-02-28

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takahiro Kishioka ,  Mamoru Tamura ,  Yuki Usui ,  Hiroto Ogata

IPC: B32B43/00 ,  C11D11/00 ,  B08B7/00 ,  C08G73/10 ,  C09J5/00 ,  C09J179/08 ,  C11D7/32 ,  H01L21/02 ,  H01L21/683 ,  B32B38/10

Abstract: A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

公开(公告)号：US12099303B2

公开(公告)日：2024-09-24

申请号：US18271383

申请日：2022-01-26

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Yuki Kato ,  Tomotada Hirohara ,  Mamoru Tamura

IPC: G03F7/11 ,  C08G59/32 ,  C09D163/00 ,  H01L21/027

CPC classification number: G03F7/11 ,  C08G59/3245 ,  C09D163/00 ,  H01L21/0274

Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A resist underlayer film-forming composition includes a solvent and a polymer having a unit structure represented by formula (I):




(in formula (I), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, a methyl group, or an ethyl group, Q1 represents a divalent organic group, R1 represents a tetravalent organic group including a C6-40 aromatic ring structure, and L1 and L2 each independently represent a hydrogen atom or a C1-10 alkyl group optionally substituted with a hydroxy group and optionally interrupted by an oxygen atom).

公开(公告)号：US11635692B2

公开(公告)日：2023-04-25

申请号：US16646987

申请日：2018-09-19

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Mamoru Tamura ,  Hiroto Ogata ,  Takahiro Kishioka

IPC: G03F7/11 ,  C09D163/04 ,  C08G59/14 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/027 ,  H01L21/311

Abstract: A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.

公开(公告)号：US11287741B2

公开(公告)日：2022-03-29

申请号：US16605246

申请日：2018-04-27

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hiroto Ogata ,  Yuto Hashimoto ,  Mamoru Tamura ,  Takahiro Kishioka

IPC: G03F7/11 ,  C08G59/30 ,  C09D163/00 ,  H01L21/027 ,  H01L21/311 ,  H01L21/306 ,  H01L21/308

Abstract: A composition for forming a resist underlayer film that functions as an anti-reflective coating during exposure and can be embedded in a recess having a narrow space and a high aspect ratio, and has excellent resistance to an aqueous hydrogen peroxide solution. A resist underlayer film-forming composition containing a resin, a compound of the following Formula (1a) or (1b): wherein X is carbonyl group or methylene group, 1 and m are each independently an integer of 0 to 5 and satisfy a relational expression of 3≤1+m 10, and n is an integer of 2 to 5, and a solvent, wherein the compound of Formula (1a) or (1b) is contained in an amount of 0.01% by mass to 60% by mass relative to the amount of the resin.