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    Resist underlayer film forming composition which contains compound having glycoluril skeleton as additive
    1.
    发明授权
    Resist underlayer film forming composition which contains compound having glycoluril skeleton as additive 有权

    公开(公告)号：US11131928B2

    公开(公告)日：2021-09-28

    申请号：US16088440

    申请日：2017-03-29

    申请人： NISSAN CHEMICAL CORPORATION

    发明人： Yuki Usui ,  Takahiro Kishioka ,  Yasushi Sakaida ,  Hiroto Ogata

    IPC分类号： G03F7/11 ,  C08K5/3445 ,  C08L63/00 ,  C08K5/00 ,  G03F7/40

    摘要： The invention provides a resist underlayer film forming composition which contains a compound having a glycoluril skeleton and which prevents collapse of a resist pattern formed on a substrate in a lithography process during semiconductor production; a resist underlayer film which uses this composition; and a method for producing a semiconductor device. The compound is of formula (1-1), wherein each of R1-R4 represents a C2-C10 alkyl group wherein a hydrogen atom is substituted by at least one substituent selected from the group consisting of a hydroxy group, a thiol group, a carboxyl group, C1-C5 alkoxyethyl groups, C1-C5 alkylsulfanyl groups and organic groups containing an ester bond, or a C2-C10 alkenyl group; the R1-R4 moieties may be the same as or different from each other; and each of R5 and R6 represents a hydrogen atom or a group selected from among C1-C10 alkyl groups and a phenyl group.

    Resist underlying film forming composition
    5.
    发明授权
    Resist underlying film forming composition 有权

    公开(公告)号：US11635692B2

    公开(公告)日：2023-04-25

    申请号：US16646987

    申请日：2018-09-19

    申请人： NISSAN CHEMICAL CORPORATION

    发明人： Mamoru Tamura ,  Hiroto Ogata ,  Takahiro Kishioka

    IPC分类号： G03F7/11 ,  C09D163/04 ,  C08G59/14 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/027 ,  H01L21/311

    摘要： A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.

    Resist underlayer film-forming composition
    6.
    发明授权
    Resist underlayer film-forming composition 有权

    公开(公告)号：US11287741B2

    公开(公告)日：2022-03-29

    申请号：US16605246

    申请日：2018-04-27

    申请人： NISSAN CHEMICAL CORPORATION

    发明人： Hiroto Ogata ,  Yuto Hashimoto ,  Mamoru Tamura ,  Takahiro Kishioka

    IPC分类号： G03F7/11 ,  C08G59/30 ,  C09D163/00 ,  H01L21/027 ,  H01L21/311 ,  H01L21/306 ,  H01L21/308

    摘要： A composition for forming a resist underlayer film that functions as an anti-reflective coating during exposure and can be embedded in a recess having a narrow space and a high aspect ratio, and has excellent resistance to an aqueous hydrogen peroxide solution. A resist underlayer film-forming composition containing a resin, a compound of the following Formula (1a) or (1b): wherein X is carbonyl group or methylene group, 1 and m are each independently an integer of 0 to 5 and satisfy a relational expression of 3≤1+m 10, and n is an integer of 2 to 5, and a solvent, wherein the compound of Formula (1a) or (1b) is contained in an amount of 0.01% by mass to 60% by mass relative to the amount of the resin.