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公开(公告)号:US11287742B2
公开(公告)日:2022-03-29
申请号:US16625957
申请日:2018-06-22
发明人: Hirokazu Nishimaki , Takafumi Endo
IPC分类号: G03F7/16 , G03F7/11 , C08G61/12 , C09D165/00 , H01L21/027
摘要: A method for reducing the level difference (iso-dense bias) (reverse bump) of a resist underlayer film formed on a semiconductor substrate having a stepped portion and a non-stepped portion by 5 nm or more, which comprises a step of applying the composition to an upper surface of the semiconductor substrate having a stepped portion and a non-stepped portion. A method for reducing the level difference (iso-dense bias) of a resist underlayer film, comprising the steps of adding a fluorine-containing surfactant to a resist underlayer film-forming composition containing a polymer and a solvent and applying the composition containing the fluorine-containing surfactant to an upper surface of a semiconductor substrate having a stepped portion and a non-stepped portion. The level difference of a resist underlayer film formed on a semiconductor substrate between a stepped portion and a non-stepped portion (i.e., reverse bump) is reduced by 5 nm or more.
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公开(公告)号:US12044969B2
公开(公告)日:2024-07-23
申请号:US17438786
申请日:2020-03-05
IPC分类号: H01L51/00 , C08G59/24 , G03F7/11 , H01L21/3105
CPC分类号: G03F7/11 , C08G59/24 , C08G59/245 , H01L21/31058
摘要: A resist underlayer film-forming composition revealing high reflow properties while applying and heating the composition on a substrate, allowing a flat application on a multi-level substrate thus forming a flat film. The composition includes a copolymer having a repeating structural unit of the following Formula (1) and/or a repeating structural unit of the following Formula (2) and an organic solvent:
(in Formulae (1) and (2), R1 is a functional group of Formula (3); in Formula (3), Q1 and Q2 are each independently a hydrogen atom or a C1-5 alkyl group, and * is a dangling bond to an oxygen atom; and in Formula (2), X1 is a C1-50 organic group, and i and j are each independently 0 or 1).-
公开(公告)号:US12025916B2
公开(公告)日:2024-07-02
申请号:US16971357
申请日:2019-02-20
IPC分类号: G03F7/11 , C08L61/06 , G03F7/16 , G03F7/20 , H01L21/027
CPC分类号: G03F7/11 , C08L61/06 , G03F7/168 , G03F7/2037 , H01L21/0275
摘要: A resist underlayer film-forming composition including a novolac resin having a structural group (C) formed by reaction between an aromatic ring of an aromatic compound (A) having at least two amino groups and three C6-40 aromatic rings and a vinyl group of an aromatic vinyl compound (B). The structural group (C) may be a group of the following Formula (1):
[wherein R1 is a divalent group containing at least two amino groups and at least three C6-40 aromatic rings]. R1 may be a divalent organic group prepared by removal of two hydrogen atoms from aromatic rings of a compound of the following Formula (2):
R1 may be a divalent organic group prepared by removal of two hydrogen atoms from aromatic rings of N,N′-diphenyl-1,4-phenylenediamine.-
公开(公告)号:US11472168B2
公开(公告)日:2022-10-18
申请号:US16761089
申请日:2018-10-30
发明人: Hiroshi Ogino , Hirokazu Nishimaki , Ryo Karasawa , Tetsuya Shinjo , Satoshi Kamibayashi , Shunsuke Moriya , Takahisa Okuno
IPC分类号: B32B27/38 , C09J7/38 , B32B7/023 , B32B7/06 , B32B7/12 , B32B27/16 , C09J183/04 , H01L21/304 , H01L21/683
摘要: A laminated body for polishing a back surface of a wafer, the laminated body including an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.
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公开(公告)号:US10585353B2
公开(公告)日:2020-03-10
申请号:US16302603
申请日:2017-05-02
IPC分类号: H01L21/308 , G03F7/11 , H01L21/306 , C09D161/12 , G03F7/038 , G03F7/32 , C08G8/04 , C09D161/06 , H01L21/02 , H01L21/027 , H01L21/311 , C08G8/00 , G03F7/16
摘要: There is provided a novel resist underlayer film forming composition comprising a polymer having a repeating structural unit of formula (1a) and/or (1b): [wherein two R1s are each independently a C1-10 alkyl group, a C2-6 alkenyl group, an aromatic hydrocarbon group, a halogen atom, a nitro group, or an amino group, two R2s are each independently a hydrogen atom, a C1-10 alkyl group, a C2-6 alkenyl group, an acetal group, an acyl group, or a glycidyl group, R3 is an aromatic hydrocarbon group optionally having a substituent or a heterocyclic group, R4 is a hydrogen atom, a phenyl group, or a naphthyl group, two ks are each independently 0 or 1, m is an integer of 3 to 500, p is an integer of 3 to 500, X is a benzene ring, and two —C(CH3)2— groups bonded to the benzene ring are in a meta position or a para position], and a solvent.
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