Composition for forming resist underlayer film having improved flattening properties

    公开(公告)号:US11287742B2

    公开(公告)日:2022-03-29

    申请号:US16625957

    申请日:2018-06-22

    摘要: A method for reducing the level difference (iso-dense bias) (reverse bump) of a resist underlayer film formed on a semiconductor substrate having a stepped portion and a non-stepped portion by 5 nm or more, which comprises a step of applying the composition to an upper surface of the semiconductor substrate having a stepped portion and a non-stepped portion. A method for reducing the level difference (iso-dense bias) of a resist underlayer film, comprising the steps of adding a fluorine-containing surfactant to a resist underlayer film-forming composition containing a polymer and a solvent and applying the composition containing the fluorine-containing surfactant to an upper surface of a semiconductor substrate having a stepped portion and a non-stepped portion. The level difference of a resist underlayer film formed on a semiconductor substrate between a stepped portion and a non-stepped portion (i.e., reverse bump) is reduced by 5 nm or more.