公开(公告)号：US20240377745A1

公开(公告)日：2024-11-14

申请号：US18292733

申请日：2022-07-28

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Satoshi TAKEDA ,  Shuhei SHIGAKI ,  Makoto NAKAJIMA

IPC: G03F7/11 ,  C08G77/26 ,  C09D183/08 ,  H01L21/311

Abstract: A silicon-containing resist underlayer film having a maximum optical absorption coefficient (k value) in a wavelength range from 220 nm to 300 nm of 0.05 or greater.

公开(公告)号：US20240004296A1

公开(公告)日：2024-01-04

申请号：US18037151

申请日：2021-11-16

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hikaru TOKUNAGA ,  Hirokazu NISHIMAKI ,  Makoto NAKAJIMA

IPC: G03F7/11 ,  G03F7/20 ,  H01L21/027 ,  C08G65/40

CPC classification number: G03F7/11 ,  G03F7/20 ,  H01L21/0274 ,  C08G65/4012 ,  C08G2650/40 ,  C08G2650/20

Abstract: A resist underlayer film-forming composition: in which self-curing is performed at a low temperature without an acid catalyst or a crosslinking agent, the amount of a sublimate can be reduced, and a high-hardness film having high bending resistance; suitable as a crosslinking agent; exhibits higher flattening and heat resistance when used as a crosslinking agent; has embedding properties equivalent to conventional products; and has an optical constant or etching resistance freely changeable according to monomer selection. The composition contains a solvent and a polymer (X) containing a repeating structural unit which is obtained by alternately bonding, via a linking group —O—, an aromatic compound A having an ROCH2— group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) to an aromatic compound B having at most 120 carbon atoms and different from A, and in which one to six B's are bonded to one A.

公开(公告)号：US20230152700A1

公开(公告)日：2023-05-18

申请号：US17916512

申请日：2021-03-31

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Satoshi TAKEDA ,  Shuhei SHIGAKI ,  Ken ISHIBASHI ,  Kodai KATO ,  Makoto NAKAJIMA

IPC: G03F7/075 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  H01L21/311 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308

CPC classification number: G03F7/0755 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/322 ,  H01L21/31138 ,  H01L21/0275 ,  H01L21/0276 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086

Abstract: A film-forming composition includes a solvent and hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane compound by using an acidic compound containing two or more acidic groups. The hydrolyzable silane compound contains an amino-group-containing silane with formula (1). R1 is an organic group containing an amino group. R2 is a substitutable alkyl, substitutable aryl, substitutable aralkyl, substitutable halogenated alkyl, substitutable halogenated aryl, substitutable halogenated aralkyl, substitutable alkoxyalkyl, substitutable alkoxyaryl, substitutable alkoxyaralkyl, or substitutable alkenyl group, or an organic group containing an epoxy, acryloyl, methacryloyl, mercapto, or a cyano group. R3 is an alkoxy, aralkyloxy, or acyloxy group or halogen atom. a is an integer of 1 or 2, b of 0 or 1; and a and b satisfy a relation of a+b≤2.


R1aR2bSi(R3)4−(a+b)  (1)

公开(公告)号：US20230112897A1

公开(公告)日：2023-04-13

申请号：US18077276

申请日：2022-12-08

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Hikaru TOKUNAGA ,  Ken ISHIBASHI ,  Keisuke HASHIMOTO ,  Makoto NAKAJIMA

IPC: C09D183/08 ,  C08G77/14 ,  C08G77/00 ,  C09D183/04 ,  G03F7/11 ,  C08G77/20 ,  C08G77/18 ,  C08G77/26 ,  G03F7/16 ,  G03F7/40 ,  C08G77/04 ,  C08G77/28

Abstract: A method for producing a coated substrate includes applying a photocurable silicon-containing coating film-forming composition to an uneven substrate; and exposing the photocurable silicon-containing coating film-forming composition to light, wherein the photocurable silicon-containing coating film-forming composition comprises a hydrolyzable silane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the hydrolyzable silane is a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) wherein R1 is a functional group relating to photocrosslinking; R2 is an alkyl group and is bonded to a silicon atom via an Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3.

公开(公告)号：US20220342306A1

公开(公告)日：2022-10-27

申请号：US17641235

申请日：2020-10-01

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hikaru TOKUNAGA ,  Hayato HATTORI ,  Makoto NAKAJIMA

IPC: G03F7/039 ,  G03F7/11 ,  G03F7/004 ,  G03F7/40 ,  G03F7/32 ,  H01L21/027 ,  H01L21/308

Abstract: A composition for forming a resist underlayer film includes: (A) a crosslinkable compound represented by formula (I) and (D) a solvent. [In the formula, n is an integer of 2-6, the n-number of Z each independently are monovalent organic groups including a mono-, di-, tri-, tetra-, penta-, or hexaformylaryl group, the n-number of A each independently represent —OCH2CH(OH)CH2O— or (BB), and T is an n-valent hydrocarbon group and/or repeating unit of a polymer optionally having at least one group selected from the group made of a hydroxy group, an epoxy group, an acyl group, an acetyl group, a benzoyl group, a carboxy group, a carbonyl group, an amino group, an imino group, a cyano group, an azo group, an azide group, a thiol group, a sulfo group, and an allyl group and optionally interrupted by a carbonyl group and/or an oxygen atom.]

公开(公告)号：US20220283501A1

公开(公告)日：2022-09-08

申请号：US17625176

申请日：2020-07-20

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hiroto OGATA ,  Hirokazu NISHIMAKI ,  Makoto NAKAJIMA ,  Yuki MITSUTAKE ,  Hayato HATTORI

IPC: G03F7/11 ,  C07D207/404 ,  C08G79/04 ,  G03F7/26 ,  H01L21/027 ,  H01L21/311 ,  H01L21/308

Abstract: A resist underlayer film forming composition contains a reaction product of an aromatic compound (A) having 6 to 60 carbon atoms and a compound represented by formula (B), and a solvent. (In the formula, X represent an oxygen atom or a nitrogen atom; Y represents a single bond, an oxygen atom or a nitrogen atom; X and Y may combine with each other to form a ring; and each of R1, R2, R3 and R4 independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cyclic alkyl group having 3 to 8 carbon atoms or an aromatic group having 6 to 10 carbon atoms; provided that R2 is present only in cases where X is a nitrogen atom, and R4 is present only in cases where Y is a nitrogen atom.)

公开(公告)号：US20220177653A1

公开(公告)日：2022-06-09

申请号：US17598981

申请日：2020-03-25

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Satoshi TAKEDA ,  Shuhei SHIGAKI ,  Ken ISHIBASHI ,  Kodai KATO ,  Makoto NAKAJIMA

IPC: C08G77/18 ,  C08G77/08 ,  G03F7/075

Abstract: A film-forming composition is suitable as a resist underlayer film-forming composition capable of forming a resist underlayer film that exhibits favorable adhesion to an EUV resist and favorable etching processability. A film-forming composition includes: a hydrolysis condensate (A) of a hydrolyzable silane compound produced in the presence of a basic hydrolysis catalyst; a hydrolysis condensate (B) of a hydrolyzable silane compound produced in the presence of an acidic hydrolysis catalyst; and a solvent.

公开(公告)号：US20210271169A1

公开(公告)日：2021-09-02

申请号：US17261253

申请日：2019-07-19

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hirokazu NISHIMAKI ,  Makoto NAKAJIMA ,  Keisuke HASHIMOTO

IPC: G03F7/11 ,  C08G8/04 ,  C08G12/26 ,  C08G12/08 ,  H01L21/027

Abstract: A polymer to which there is attached a group represented by the following formula (1): (wherein each of Rx, Sy, and Sz represents a hydrogen atom or a monovalent organic group; each of Ry and Rz represents a single bond or a divalent organic group; each of ring Ary and ring Arz represents a C4 to C20 cyclic alkyl group or a C6 to C30 aryl group, and ring Ary and ring Arz may be linked together to form a new ring structure therebetween; ny is an integer of 0 to the maximum number corresponding to allowable substitution to ring Ary; nz is an integer of 0 to the maximum number corresponding to allowable substitution to ring Arz; and * is a polymer bonding site).

公开(公告)号：US20190250512A1

公开(公告)日：2019-08-15

申请号：US16339555

申请日：2017-10-02

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Shuhei SHIGAKI ,  Satoshi TAKEDA ,  Wataru SHIBAYAMA ,  Makoto NAKAJIMA ,  Rikimaru SAKAMOTO

IPC: G03F7/11 ,  G03F7/20 ,  G03F7/40 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/20 ,  G03F7/2002 ,  G03F7/40 ,  H01L21/027

Abstract: Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.

公开(公告)号：US20230203299A1

公开(公告)日：2023-06-29

申请号：US17927476

申请日：2021-06-17

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hikaru TOKUNAGA ,  Makoto NAKAJIMA

IPC: C08L65/02 ,  C08G61/12 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308

CPC classification number: C08L65/02 ,  C08G61/127 ,  C08G61/124 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  C08L2203/20 ,  H01L21/0276

Abstract: A resist underlayer film forming composition capable of forming a flat film that exhibits high etching resistance, a good dry etching rate ratio and a good optical constant, while having good coverage even with respect to a so-called multileveled substrate and having a small difference in the film thickness after embedding. Also, a method for producing a polymer that is suitable for the resist underlayer film forming composition; a resist underlayer film which uses the resist underlayer film forming composition; and a method for producing a semiconductor device. This resist underlayer film forming composition contains: a reaction product of an aromatic compound (A) that has from 6 to 120 carbon atoms, and a compound that is represented by formula (1); and a solvent.