公开(公告)号：US20240385521A1

公开(公告)日：2024-11-21

申请号：US18785814

申请日：2024-07-26

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Shuhei SHIGAKI ,  Satoshi TAKEDA ,  Wataru SHIBAYAMA ,  Makoto NAKAJIMA

IPC: G03F7/075 ,  B32B27/28 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

Abstract: A surface modifier for a resist pattern, which is to be applied to a substrate prior to the formation of a resist pattern with a thickness of 0.10 μm or less on the substrate to thereby enhance the adhesion between the substrate and the resist pattern, including at least one member selected from among a compound represented by average compositional formula (1), a hydrolysate thereof and a hydrolytic condensate thereof: R1aR2b(OX)cSiO(4−a−b−c)/2 (1), wherein: R1 represents a —(CH2)nY group; Y represents a cyclohexenyl group, etc.; n is an integer of 0-4; R2 represents a monovalent C1-4 hydrocarbon group; X represents a hydrogen atom or a monovalent C1-4 hydrocarbon group; a is a numerical value of 1-2; b is a numerical value of 0-1; and c is a numerical value of 0-2, provided that a+b+c is not greater than 4.

公开(公告)号：US20240162086A1

公开(公告)日：2024-05-16

申请号：US18277809

申请日：2022-02-21

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Satoshi TAKEDA ,  Shuhei SHIGAKI ,  Ken ISHIBASHI ,  Kodai KATO ,  Makoto NAKAJIMA ,  Rikimaru SAKAMOTO

IPC: H01L21/768 ,  G03F7/075 ,  G03F7/11 ,  H01L21/027

CPC classification number: H01L21/76868 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/76876

Abstract: A substrate with a thin film, including the thin film including a Si—R1 group of a compound represented by Formula (1), and the substrate including the thin film including the Si—R1 group, the thin film being disposed on a surface of the substrate, where in Formula (1), R1 represents a monovalent organic group that bonds to Si; R2 represents a monovalent organic group that bonds to Si; R3 represents an alkoxy group, an acyloxy group, or a halogen atom that bonds to Si; n represents an integer from 0 to 2; when n is 2, R2 may be the same or different; when n is 0 or 1, R3 may be the same or different; and when n is 1, R1 and R2 may bond together to form a ring structure.


Si(R1)(R2)(R3)3-n  . . . Formula (1)

公开(公告)号：US20240069441A1

公开(公告)日：2024-02-29

申请号：US18254997

申请日：2021-11-26

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Satoshi TAKEDA ,  Wataru SHIBAYAMA ,  Shuhei SHIGAKI ,  Ken ISHIBASHI ,  Kodai KATO ,  Makoto NAKAJIMA

IPC: G03F7/11 ,  C08G77/26 ,  C09D183/08

CPC classification number: G03F7/11 ,  C08G77/26 ,  C09D183/08

Abstract: A resist underlayer film-forming composition capable of reducing occurrence of defects caused by microparticles or the like that may be generated during formation of a coating film. A silicon-containing resist underlayer film-forming composition including: [A]a polysiloxane; [B] a glycol compound having a normal boiling point of 230.0° C. or higher and being of the following Formula (1):




(wherein R1 and R2 are each independently a hydrogen atom, a C1-4 alkyl group, or a C3-4 acyl group; and n is an integer of 3 or more); and [C] a solvent (except for a compound corresponding to the compound [B]).

公开(公告)号：US20220155688A1

公开(公告)日：2022-05-19

申请号：US17667595

申请日：2022-02-09

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Makoto NAKAJIMA

IPC: G03F7/11 ,  C08G77/14 ,  C09D183/06 ,  G03F7/16 ,  G03F7/32 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308

Abstract: A composition for forming a resist underlayer film for lithography, the resist underlayer film for lithography containing silicon and being dissolved and removed with an alkaline developer in accordance with a resist pattern together with an upper layer resist during development of the upper layer resist, the composition comprising a component, which is a silane compound containing a hydrolyzable silane, a hydrolysate of the silane, a hydrolytic condensate of the silane, or any combination of these, and an element, which is an element of causing dissolution in an alkaline developer. The element, which is an element of causing dissolution in an alkaline developer, is contained in the structure of the compound as the component.

公开(公告)号：US20220100092A1

公开(公告)日：2022-03-31

申请号：US17419105

申请日：2019-12-25

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Yutaro KURAMOTO ,  Satoshi TAKEDA ,  Shuhei SHIGAKI ,  Ken ISHIBASHI ,  Makoto NAKAJIMA

IPC: G03F7/075 ,  G03F7/11 ,  G03F7/20 ,  C07F7/10

Abstract: A film-forming composition is suitable as a resist underlayer film-forming composition capable of forming an Si-containing resist underlayer film that exhibits favorable adhesion to an EUV resist and favorable etching processability because of high rate of etching with fluorine. A film-forming composition, for example, including a polymer of Formula (E1) and a solvent.

公开(公告)号：US20250044692A1

公开(公告)日：2025-02-06

申请号：US18254744

申请日：2021-11-26

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Satoshi TAKEDA ,  Shuhei SHIGAKI ,  Ken ISHIBASHI ,  Kodai KATO ,  Makoto NAKAJIMA

IPC: G03F7/075 ,  G03F7/004 ,  G03F7/11 ,  G03F7/20 ,  G03F7/40 ,  G03F7/42

Abstract: A silicon-containing resist underlayer film forming composition for forming a resist underlayer film which is able to be removed not only by a conventional dry etching method but also by a wet etching method that uses a chemical agent, and which has excellent lithography characteristics, while enabling the achievement of a high etching rate during wet etching. A silicon-containing resist underlayer film forming composition which contains (A) a polysiloxane, (B) nitric acid, (C) a bisphenol compound and (D) a solvent.

公开(公告)号：US20240393693A1

公开(公告)日：2024-11-28

申请号：US18689632

申请日：2022-09-02

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Satoshi TAKEDA ,  Shunsuke MORIYA ,  Takahiro KISHIOKA

IPC: G03F7/11 ,  C08G77/00 ,  C08G77/26 ,  C09D183/04 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

Abstract: A silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film to be used as an etching mask when a metal film containing at least one metal selected from the group consisting of Groups 6, 7, 8, and 9 of the periodic table of elements is dry-etched.

公开(公告)号：US20230152699A1

公开(公告)日：2023-05-18

申请号：US17916238

申请日：2021-03-31

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Kodai KATO ,  Satoshi TAKEDA ,  Shuhei SHIGAKI ,  Wataru SHIBAYAMA ,  Makoto NAKAJIMA

IPC: G03F7/075 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  H01L21/311 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308

CPC classification number: G03F7/0755 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/322 ,  G03F7/2043 ,  H01L21/31138 ,  H01L21/0275 ,  H01L21/0276 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086

Abstract: A film-forming composition for forming a resist underlayer film for a solvent development type resist that is capable of forming a good resist pattern which contains a hydrolysis-condensation product of a hydrolyzable silane compound, at least one substance that is selected from the group consisting of an aminoplast crosslinking agent and a phenoplast crosslinking agent, and a solvent, and wherein the hydrolyzable silane compound contains a hydrolyzable silane represented by formula (1).

公开(公告)号：US20220187709A1

公开(公告)日：2022-06-16

申请号：US17598955

申请日：2020-03-24

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Satoshi TAKEDA ,  Shuhei SHIGAKI ,  Ken ISHIBASHI ,  Kodai KATO ,  Makoto NAKAJIMA

IPC: G03F7/11 ,  C08G77/26 ,  C09D183/08 ,  H01L21/027

Abstract: A film-forming composition including one selected from among a hydrolyzable silane compound, a hydrolysate of the compound, and a hydrolysis condensate of the compound, and a solvent, the film-forming composition wherein: the hydrolyzable silane compound contains a hydrolyzable silane having a cyano group in the molecule and being of the following Formula (1): R1aR2bSi(R3)4−(a+b)  (1) (wherein R1 is a group bonded to a silicon atom and is an organic group containing a cyano group; R2 is a group bonded to a silicon atom via an Si—C bond, and is each independently a substitutable alkyl group, etc.; R3 is a group or atom bonded to a silicon atom, and is each independently a hydroxy group, an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3).

公开(公告)号：US20200041906A1

公开(公告)日：2020-02-06

申请号：US16499533

申请日：2018-03-30

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru SHIBAYAMA ,  Satoshi TAKEDA ,  Makoto NAKAJIMA

IPC: G03F7/11 ,  C09D183/06 ,  C08G77/14 ,  H01L21/266 ,  H01L21/308 ,  H01L21/02 ,  H01L21/027

Abstract: A composition for forming a resist underlayer film that mask residues after lithography can be removed only with a chemical without etching. A composition for forming a silicon-containing resist underlayer film, that includes a polysiloxane having a unit structure including a carbonyl group-containing functional group, wherein the silicon-containing resist underlayer film is used as a mask layer in a step of removing the mask layer with a hydrogen peroxide-containing chemical after transfer of a pattern to an underlayer by a lithography process. The composition for forming a silicon-containing resist underlayer film, wherein the unit structure including a carbonyl group-containing functional group may include a cyclic acid anhydride group, a cyclic diester group, or a diester group. The polysiloxane may further have a unit structure including an amide group-containing organic group. The amide group may be a sulfonamide group or a diallyl isocyanurate group.