Abstract:
A multi-chip package structure is provided with a first chip, a substrate adjacent to the first chip, a plurality of contacts connecting the first chip and the substrate, a second chip disposed between the first chip and the substrate and connecting to the first chip, and a underfill film, wherein the underfill film covers the contact to isolate the contact from the second chip, wherein an empty space is defined by the second chip and the substrate so that the second chip does not contact the substrate.
Abstract:
A stacked multi-chip package comprising a substrate, a first chip, a lead frame, and a second chip is provided. The first chip is placed on and electrically connected with the substrate. The lead frame is placed on the substrate and forming a space therebeneath to accommodate the first chip. The second chip is placed to the lead frame and electrically connected with the substrate through the lead frame.
Abstract:
An integrated circuit package includes a balanced-part structure. The condition of thermal stress of chips connected on a substrate decides the amount, locations, weights, and the material of at least a balanced-part fastened on a substrate. The balanced-part is fastened on the substrate to balance stress distribution before an adhering heat sinks process and a packaging molding compound process. The balanced-part also decreases thermal stress affection and avoid warpage defects of the integrated circuit packages.
Abstract:
A cavity-down stacked multi-chip package with a plurality of packages stacked together is provided. The uppermost package has a circuit board with an opening, a heat spreader, and a chip. The heat spreader is positioned on the circuit board and covers the opening. The chip is positioned in the opening and adhered to a lower surface of the heat spreader. In addition, the chip is electrically connected to a lower surface of the circuit board through at least a conductive wire.
Abstract:
A module board has embedded chips and components. A substrate has at least one large cavity and at least one small cavity, in which the large cavity passes through the substrate and a passive component is set in the small cavity. A heat-dissipation sheet is set at the bottom of the substrate. A first adhesion layer bonds the bottom of the substrate to the heat-dissipation sheet. At least one IC chip is fixed in the large cavity of the substrate by a second adhesion layer. A dielectric filling layer covers the entire surface of the module board and fills all gaps, in which the dielectric filling layer has a plurality of micro vias to expose partial areas of the IC chip, the passive component and the substrate. At least one wiring pattern layer is formed on the dielectric filling layer and provide electrical connection among the IC chip, the passive component, and the substrate.
Abstract:
A structure of a chip package and a process thereof are provided. The process of the chip package makes use of the TFT-LCD panel or IC process to increase the circuit layout density for high electrical performance. First, a multi-layer interconnection structure with pads of high layout density and thin fine circuits is formed on a base substrate with a large-area and high co-planarity surface, wherein the base substrate is made of quartz or glass or ceramics. Then, a chip is located on the top surface of the multi-layer interconnection structure by flip-chip or wire-bonding technology. Then, a substrate or a heat sink is attached on the top surface of the multi-layer interconnection structure for being a stiffener and providing mechanical support. Finally, the base substrate is removed and contacts are attached on the bottom surface of the multi-layer interconnection structure.
Abstract:
A build-up layer packaging comprising a first ceramic substrate, a second ceramic substrate, and a circuit layer is provided. The first ceramic substrate has a through hole to dispose a die therein. The second ceramic substrate, attached to a common lower surface of the ceramic substrate and the die, further has a plurality of openings to expose the pads of the die. The openings are filled with plugs electrically connecting to the pads. The circuit layer is formed under the second ceramic substrate to transmit signals generated by the die outward.
Abstract:
A bump process for fabricating bumps and an underfill layer on the active surface of a chip inside a flip chip package is disclosed. An adhesive layer is formed on each of the die pads of the chip. Thereafter, a plurality of bump balls are scattered on the active surface of the chip. The bump balls are vibrated such that only one bump ball is attached to the adhesive layer of each die pad. After removing the un-attached bump balls from the active surface of the chip, an underfill material is applied on the active surface of the chip to encapsulate the bump balls but expose their top surfaces. Thus, the bump process is capable of increasing the reliability of the flip chip package and lower the overall fabrication cost of the flip chip package.
Abstract:
A bump transfer fixture for accommodating a plurality of bumps is provided. The bump transfer fixture includes a transfer plate having a plurality of fix structures. The plurality of fix structures are disposed on the surface of the transfer plate. Each of the plurality of fix structures accommodates one of the bumps. The fix structures can be concave or convex structures. By using the transfer plate to form the bumps, no photolithography technology is used to form the patterned photoresist layer. Hence, the bump transfer process is much simpler and faster. Therefore, the present invention effectively reduces the cost and time for the bump transfer process.
Abstract:
A method for manufacturing multi-layer package substrates is shown. A substrate with a first side and a second side is first provided, and a layer of release film is formed on the first side and second side of the substrate. After drilling a plurality of through holes on the substrate bonded to the release film and plugging the through holes with a conductive material, the release film is removed. A first copper film is formed on the first and second side of the substrate. First, circuit layer patterns are formed on the first and second side of the substrate through photolithography and etching processes. After coating an build-up layer on the first and second side of the substrate and drilling the build-up layers with a laser to form counter vias on the first side and second side of the substrate, a copper seed layer is formed on the inner surfaces of the counter vias. Second circuit layer patterns are formed on the first side and second side of the substrate. Finally, contact pads are formed on the first side and second side of the substrate.