Semiconductor storage device and method for controlling the semiconductor storage device
    1.
    发明授权
    Semiconductor storage device and method for controlling the semiconductor storage device 有权
    半导体存储装置及其控制方法

    公开(公告)号:US09032235B2

    公开(公告)日:2015-05-12

    申请号:US13727984

    申请日:2012-12-27

    摘要: According to one embodiment, a semiconductor storage device includes a nonvolatile memory, memory controller storing control information, a switch between the nonvolatile memory/memory controller and a power supply terminal, a second memory, an interpreter interprets a command, a switch controller, and a third memory stores an address of the control information in the second memory. The memory controller instructs the switch controller to open the switch after writing the control information into the second memory and reads the control information from the second memory based on the address stored in the third memory when the memory controller is electrically connected to the first power supply terminal.

    摘要翻译: 根据一个实施例,半导体存储装置包括非易失性存储器,存储控制信息的存储器控​​制器,非易失性存储器/存储器控制器和电源端子之间的切换,第二存储器,解释器解释命令,开关控制器和 第三存储器将控制信息的地址存储在第二存储器中。 当存储器控制器电连接到第一电源时,存储器控制器指示开关控制器在将控制信息写入第二存储器之后打开开关,并且基于存储在第三存储器中的地址从第二存储器读取控制信息 终奌站。

    MEMORY SYSTEM AND DATA WRITING METHOD
    2.
    发明申请
    MEMORY SYSTEM AND DATA WRITING METHOD 有权
    记忆系统和数据写入方法

    公开(公告)号:US20130246716A1

    公开(公告)日:2013-09-19

    申请号:US13616466

    申请日:2012-09-14

    IPC分类号: G06F3/06

    摘要: According to one embodiment, when a controller writes update data in a second memory to a first memory which is nonvolatile and a difference between a size of a page and a size of the update data is equal to or greater than a size of a cluster, the controller configured to generate write data by adding, to the update data, data which has the size of the cluster, store an update content of management information corresponding to the update data and an update content storage position indicating a storage position of the update content of the management information in the first memory, and write the generated write data to a block in writing of the first memory.

    摘要翻译: 根据一个实施例,当控制器将第二存储器中的更新数据写入非易失性的第一存储器,并且页面的大小与更新数据的大小之间的差等于或大于集群的大小时, 所述控制器被配置为通过向所述更新数据添加具有所述集群的大小的数据来存储与所述更新数据相对应的管理信息的更新内容和指示所述更新内容的存储位置的更新内容存储位置来生成写入数据 的第一存储器中的管理信息,并将生成的写入数据写入到第一存储器的写入块中。

    Memory system and data writing method
    4.
    发明授权
    Memory system and data writing method 有权
    内存系统和数据写入方式

    公开(公告)号:US08825946B2

    公开(公告)日:2014-09-02

    申请号:US13616466

    申请日:2012-09-14

    IPC分类号: G06F12/00

    摘要: According to one embodiment, when a controller writes update data in a second memory to a first memory which is nonvolatile and a difference between a size of a page and a size of the update data is equal to or greater than a size of a cluster, the controller configured to generate write data by adding, to the update data, data which has the size of the cluster, store an update content of management information corresponding to the update data and an update content storage position indicating a storage position of the update content of the management information in the first memory, and write the generated write data to a block in writing of the first memory.

    摘要翻译: 根据一个实施例,当控制器将第二存储器中的更新数据写入非易失性的第一存储器,并且页面的大小与更新数据的大小之间的差等于或大于集群的大小时, 所述控制器被配置为通过向所述更新数据添加具有所述集群的大小的数据来存储与所述更新数据相对应的管理信息的更新内容和指示所述更新内容的存储位置的更新内容存储位置来生成写入数据 的第一存储器中的管理信息,并将生成的写入数据写入到第一存储器的写入块中。

    SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR CONTROLLING THE SEMICONDUCTOR STORAGE DEVICE
    5.
    发明申请
    SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR CONTROLLING THE SEMICONDUCTOR STORAGE DEVICE 有权
    半导体存储器件和控制半导体存储器件的方法

    公开(公告)号:US20140040650A1

    公开(公告)日:2014-02-06

    申请号:US13727984

    申请日:2012-12-27

    IPC分类号: G06F1/32

    摘要: According to one embodiment, a semiconductor storage device includes a nonvolatile memory, memory controller storing control information, a switch between the nonvolatile memory/memory controller and a power supply terminal, a second memory, an interpreter interprets a command, a switch controller, and a third memory stores an address of the control information in the second memory. The memory controller instructs the switch controller to open the switch after writing the control information into the second memory and reads the control information from the second memory based on the address stored in the third memory when the memory controller is electrically connected to the first power supply terminal.

    摘要翻译: 根据一个实施例,半导体存储装置包括非易失性存储器,存储控制信息的存储器控​​制器,非易失性存储器/存储器控制器和电源端子之间的切换,第二存储器,解释器解释命令,开关控制器和 第三存储器将控制信息的地址存储在第二存储器中。 当存储器控制器电连接到第一电源时,存储器控制器指示开关控制器在将控制信息写入第二存储器之后打开开关,并且基于存储在第三存储器中的地址从第二存储器读取控制信息 终奌站。

    MEMORY SYSTEM AND CONTROL METHOD OF MEMORY SYSTEM
    6.
    发明申请
    MEMORY SYSTEM AND CONTROL METHOD OF MEMORY SYSTEM 有权
    存储系统的存储系统和控制方法

    公开(公告)号:US20130232296A1

    公开(公告)日:2013-09-05

    申请号:US13599087

    申请日:2012-08-30

    IPC分类号: G06F12/02

    摘要: A memory system in embodiments includes a nonvolatile semiconductor memory that stores user data, a forward lookup address translation table and a reverse lookup address translation table, and a controller. The controller is configured to determine that the user data stored in the nonvolatile semiconductor memory is valid or invalid based on these two tables. The controller may perform data organizing of selecting data determined valid and rewriting the data in a new block. The controller may perform write processing and rewriting processing to the new block alternately at a predetermined ratio. The controller may determine whether a predetermined condition is satisfied on a basis of addresses included in write requests and write data in the MLC mode when the condition is satisfied and write data in the SLC mode when the condition is not satisfied.

    摘要翻译: 实施例中的存储器系统包括存储用户数据的非易失性半导体存储器,正向查找地址转换表和反向查找地址转换表以及控制器。 控制器被配置为基于这两个表来确定存储在非易失性半导体存储器中的用户数据有效或无效。 控制器可以执行数据组织,选择确定有效的数据并在新的块中重写数据。 控制器可以以预定的比例交替地对新的块执行写入处理和重写处理。 当条件满足时,控制器可以基于写入请求中包括的地址和写入数据来确定是否满足预定条件,并且当条件不满足时将控制器写入SLC模式中的数据。

    MEMORY SYSTEM
    8.
    发明申请
    MEMORY SYSTEM 失效
    记忆系统

    公开(公告)号:US20120159244A1

    公开(公告)日:2012-06-21

    申请号:US13326872

    申请日:2011-12-15

    IPC分类号: G06F12/16 G06F11/14

    CPC分类号: G06F11/1441

    摘要: According to one embodiment, a memory system includes a data manager and a data restorer. The data manager multiplexes difference logs by a parallel writing operation and stores them in a second storage area, the difference logs being difference logs indicating difference information before and after update of a management table; and thereafter multiplexes predetermined data as finalizing logs and stores them in the second storage area. The data restorer determines a system status at startup of the memory system, by judging whether irregular power-off occurs or data destruction occurs in the second storage area, based on a data storage state of the difference logs and the finalizing logs stored in the second storage area.

    摘要翻译: 根据一个实施例,存储器系统包括数据管理器和数据恢复器。 数据管理器通过并行写入操作来复用差异日志,并将它们存储在第二存储区域中,差异日志是指示更新管理表之前和之后的差异信息的差异日志; 然后将预定数据多路复用为完成日志并将它们存储在第二存储区域中。 数据恢复器通过基于存储在第二存储区域中的不同日志的数据存储状态和存储的完成日志来判断在启动存储器系统时的系统状态,通过判断是否发生不规则的电源关闭或在第二存储区域中发生数据破坏 储藏区域。

    Memory device including nonvolatile memory and memory controller
    9.
    发明申请
    Memory device including nonvolatile memory and memory controller 审中-公开
    存储器件包括非易失性存储器和存储器控制器

    公开(公告)号:US20070016719A1

    公开(公告)日:2007-01-18

    申请号:US11101440

    申请日:2005-04-08

    IPC分类号: G06F12/00

    摘要: A memory device includes a first nonvolatile memory and a second nonvolatile memory. The first nonvolatile memory is used as a main memory and includes a plurality of physical blocks which store data. The second nonvolatile memory is used as a cache memory for the first nonvolatile memory and includes a plurality of block entries which store data and an information table in which cache management information used to allow the second nonvolatile memory to operate as the cache memory is stored.

    摘要翻译: 存储器件包括第一非易失性存储器和第二非易失性存储器。 第一非易失性存储器用作主存储器,并且包括存储数据的多个物理块。 第二非易失性存储器用作第一非易失性存储器的高速缓冲存储器,并且包括存储数据的多个块条目和信息表,其中用于允许第二非易失性存储器作为高速缓冲存储器被存储的操作的高速缓存管理信息。