公开(公告)号：US20110284817A1

公开(公告)日：2011-11-24

申请号：US13109985

申请日：2011-05-17

申请人： Yoshitaka SASAGO ,  Masaharu Kinoshita ,  Mitsuharu Tai ,  Takashi Kobayashi

发明人： Yoshitaka SASAGO ,  Masaharu Kinoshita ,  Mitsuharu Tai ,  Takashi Kobayashi

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L27/2481 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472

摘要： In a nonvolatile semiconductor memory device, there is provided a technique which promotes microfabrication by reducing a thickness of the device as suppressing an OFF current of a polysilicon diode which is a selective element. A polysilicon layer to which an impurity is doped at low concentration and which becomes an electric-field relaxation layer of the polysilicon diode which is a selective element of a resistance variable memory is formed so as to be divided into two or more layers such as polysilicon layers. In this manner, it is suppressed to form the crystal grain boundaries thoroughly penetrating between an n-type polysilicon layer and a p-type polysilicon layer in the electric-field relaxation layer, and therefore, it is prevented to generate a leakage current flowing through the crystal grain boundaries in application of a reverse-bias voltage without increasing a height of the polysilicon diode.

摘要翻译： 在非易失性半导体存储器件中，提供了一种通过减小作为选择元件的多晶硅二极管的截止电流来减小器件厚度来促进微细加工的技术。 形成以低浓度掺杂有杂质并作为电阻可变存储器的选择元件的多晶硅二极管的电场弛豫层的多晶硅层，以被分成两层或多层，例如多晶硅 层。 以这种方式抑制电场弛豫层中的n型多晶硅层和p型多晶硅层之间的晶粒边界完全透过，从而防止产生流过的漏电流 在不增加多晶硅二极管的高度的情况下施加反偏压的晶粒边界。

公开(公告)号：US07906834B2

公开(公告)日：2011-03-15

申请号：US12219837

申请日：2008-07-29

申请人： Toshiyuki Mine ,  Mitsuharu Tai ,  Akio Shima

发明人： Toshiyuki Mine ,  Mitsuharu Tai ,  Akio Shima

IPC分类号： H01L23/552

CPC分类号： H01L21/268 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/78642

摘要： A display device having a thin film semiconductor device including a semiconductor thin film having first and second semiconductor regions formed each into a predetermined shape above an insulative substrate, a conductor fabricated into a predetermined shape to the semiconductor thin film and a dielectric film put between the semiconductor thin film and the conductor, in which the semiconductor thin film is a polycrystal thin film with the crystallization ratio thereof exceeding 90% and the difference of unevenness on the surface of the semiconductor thin film does not exceed 10 nm.

摘要翻译： 一种具有薄膜半导体器件的显示装置，该薄膜半导体器件包括半导体薄膜，该半导体薄膜具有在绝缘性基板的上方形成为规定形状的第一半导体区域和第二半导体区域，对该半导体薄膜形成为规定形状的导体， 半导体薄膜和导体，其中半导体薄膜是结晶比率超过90％的多晶薄膜，并且半导体薄膜的表面上的不均匀度不超过10nm。

公开(公告)号：US07902003B2

公开(公告)日：2011-03-08

申请号：US11620154

申请日：2007-01-05

申请人： Kiyoshi Ouchi ,  Mutsuko Hatano ,  Takeshi Sato ,  Mitsuharu Tai

发明人： Kiyoshi Ouchi ,  Mutsuko Hatano ,  Takeshi Sato ,  Mitsuharu Tai

IPC分类号： H01L21/84

CPC分类号： H01L21/02683 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.

摘要翻译： 一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。 在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。 当制造TFT时，该低电阻半导体层用于形成源极和漏极。 由于C，N和O杂质降低了TFT的迁移率，因此使用多晶硅，其中污染物浓度满足以下条件：碳浓度nlE 3×1019 cm -3，氮浓度NlE 5×1017 cm-3， 和氧浓度nlE; 3×1019 cm-3。

公开(公告)号：US20080290344A1

公开(公告)日：2008-11-27

申请号：US12129142

申请日：2008-05-29

申请人： Mitsuharu TAI ,  Mutsuko HATANO ,  Takeshi SATO ,  Seongkee PARK ,  Kiyoshi OUCHI

发明人： Mitsuharu TAI ,  Mutsuko HATANO ,  Takeshi SATO ,  Seongkee PARK ,  Kiyoshi OUCHI

IPC分类号： H01L31/036 ,  G02F1/136 ,  H01L21/00

CPC分类号： H01L21/02691 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  Y10S438/949

摘要： An image display device manufactured by using a polycrystalline semiconductor film. The polycrystalline semiconductor film is composed of crystal grains with a region free from crystal grain boundaries of at least 2 μm in width and at least 3 μm in length, small crystal grain boundary groups each composed of three or more crystal grain boundaries arranged substantially in parallel to each other and with an interval of not greater than 100 μm are included in a part of the region, and the small crystal grain boundary groups are partially eliminated.

摘要翻译： 一种使用多晶半导体膜制造的图像显示装置。 多晶半导体膜由具有宽度至少为2μm，长度至少为3μm的晶界的区域的晶粒构成，小晶粒边界组由三个以上构成的晶粒边界基本平行地排列 并且间隔不大于100μm的区域包含在该区域的一部分中，并且部分地消除了小的晶粒边界组。

公开(公告)号：US07456428B2

公开(公告)日：2008-11-25

申请号：US11711623

申请日：2007-02-28

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L29/04

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μos。

公开(公告)号：US07262821B2

公开(公告)日：2007-08-28

申请号：US10772431

申请日：2004-02-06

申请人： Mitsuharu Tai ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Hideo Sato

发明人： Mitsuharu Tai ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Hideo Sato

IPC分类号： G02F1/136

CPC分类号： H01L27/1296 ,  G02F1/13624 ,  G02F1/136277 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78621 ,  H01L29/78627

摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

摘要翻译： 大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。 在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。 构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。

公开(公告)号：US07192852B2

公开(公告)日：2007-03-20

申请号：US11172958

申请日：2005-07-05

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

IPC分类号： H01L21/20

CPC分类号： H01L21/02683 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

公开(公告)号：US08592789B2

公开(公告)日：2013-11-26

申请号：US13109985

申请日：2011-05-17

申请人： Yoshitaka Sasago ,  Masaharu Kinoshita ,  Mitsuharu Tai ,  Takashi Kobayashi

发明人： Yoshitaka Sasago ,  Masaharu Kinoshita ,  Mitsuharu Tai ,  Takashi Kobayashi

IPC分类号： H01L45/00

CPC分类号： H01L27/2481 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472

摘要： In a nonvolatile semiconductor memory device, there is provided a technique which promotes microfabrication by reducing a thickness of the device as suppressing an OFF current of a polysilicon diode which is a selective element. A polysilicon layer to which an impurity is doped at low concentration and which becomes an electric-field relaxation layer of the polysilicon diode which is a selective element of a resistance variable memory is formed so as to be divided into two or more layers such as polysilicon layers. In this manner, it is suppressed to form the crystal grain boundaries thoroughly penetrating between an n-type polysilicon layer and a p-type polysilicon layer in the electric-field relaxation layer, and therefore, it is prevented to generate a leakage current flowing through the crystal grain boundaries in application of a reverse-bias voltage without increasing a height of the polysilicon diode.

公开(公告)号：US08338867B2

公开(公告)日：2012-12-25

申请号：US13236338

申请日：2011-09-19

申请人： Mitsuharu Tai ,  Hideo Sato ,  Mutsuko Hatano ,  Masayoshi Kinoshita

发明人： Mitsuharu Tai ,  Hideo Sato ,  Mutsuko Hatano ,  Masayoshi Kinoshita

IPC分类号： H01L31/062

CPC分类号： H01L27/1214 ,  G09G2360/14 ,  H01L31/1136

摘要： According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo transistor is formed by using TFT, which comprises a first electrode 11 prepared on an insulating substrate 10, a photoelectric conversion region 14 and a second electrode 12, and a third electrode 13 disposed above the photoelectric conversion region 14. An impurity layer positioned closer to an intrinsic layer (density of active impurities is 1017 cm−3 or lower) is provided on the regions 15 and 16 on both sides under the third electrode 13 or on one of the regions 15 or 16 on one side.

摘要翻译： 根据本发明，通过仅使用多晶材料，通过平面法在绝缘基板上制备高灵敏度的感光元件和传感器驱动电路。 感光元件和传感器驱动电路都由多晶硅膜制成。 作为感光元件，通过使用TFT形成光电晶体管，该TFT包括在绝缘基板10上制备的第一电极11，光电转换区域14和第二电极12以及设置在光电转换器之上的第三电极13 在第三电极13下方的区域15和16上，或者在区域15或16中的一个区域上设置位于更接近本征层（活性杂质的密度为1017cm-3或更低）的杂质层。 在一边。

公开(公告)号：US07939826B2

公开(公告)日：2011-05-10

申请号：US12258738

申请日：2008-10-27

申请人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

发明人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

IPC分类号： H01L29/10

CPC分类号： H01L27/1285 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.

摘要翻译： 提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。 多晶的表面在其晶界处是平坦的。 此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜110％的范围内。