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公开(公告)号：US4241423A
公开(公告)日：1980-12-23
申请号：US972405
申请日：1978-12-22
CPC分类号： G11B7/13 , G11B7/0908 , G11B7/0917 , G11C13/048
摘要： In an optical memory device, such as an optical video disk, an injection laser is used as the source of the light, as the detector of the light reflected from the memory element and as the detector for controlling the proper focus of the light on the memory element. The light reflected from the memory element is fed back into the injection laser and variations in certain characteristics of the injection laser, such as the optical output at constant current, the electrical current through the laser at constant voltage and the voltage drop across the laser at constant current, are used to read the memory device and to maintain the focus.
摘要翻译： 在诸如光学视频盘的光学存储器件中，使用注入激光器作为光源，作为从存储元件反射的光的检测器，并且作为用于控制光的适当聚焦的检测器 记忆元素 从存储元件反射的光被反馈到注入激光器中，并且注入激光器的某些特性的变化，例如恒定电流的光输出，恒定电压下通过激光器的电流以及激光器上的电压降 恒流，用于读取存储器件并保持焦点。
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2.发明授权Electroluminescent edge-emitting diode comprising a light reflector in a groove 失效电致发光边缘发光二极管，其包括凹槽中的光反射器
公开(公告)号：US3974514A
公开(公告)日：1976-08-10
申请号：US531614
申请日：1974-12-11
申请人： Henry Kressel , Michael Ettenberg , Ivan Ladany
发明人： Henry Kressel , Michael Ettenberg , Ivan Ladany
摘要： A body of semiconductor material having a very limited contact region. The contact region is adjacent an emitting surface of the body, is spaced from the sides of the body and extends no more than one-quarter the distance from the emitting surface to a surface opposite the emitting surface. That portion of the body in the vicinity of the contact region is the active region of the diode. The smaller the active region, relative to the total size of the body, the less the internal absorption of generated light in the body. A groove can be provided across the body adjacent to that end of the contact region opposite from the emitting surface. In the groove is a metallic layer which functions as a light reflector. Any light generated in the body striking the metallic surface may be reflected out to the emitting surface of the body.
摘要翻译： 具有非常有限接触区域的半导体材料体。 接触区域邻近主体的发射表面，与主体的侧面间隔开并且延伸不超过发射表面到与发射表面相对的表面的距离的四分之一。 接触区域附近的物体的该部分是二极管的有源区。 活性区域相对于身体的总体积越小，体内产生的光的内部吸收越少。 可以在与发射表面相对的接触区域的该端部附近的主体上设置凹槽。 在凹槽中是用作光反射器的金属层。 在身体中产生的撞击金属表面的任何光可以被反射到身体的发射表面。
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公开(公告)号：US4597004A
公开(公告)日：1986-06-24
申请号：US707795
申请日：1985-03-04
IPC分类号： H01L31/0352 , H01L31/103 , H01L27/14 , H01L31/00
CPC分类号： H01L31/035281 , H01L31/1035 , Y02E10/50
摘要： A photodetector includes a cap layer over an absorptive layer with the P-N junction formed in the absorptive layer by diffusion of conductivity modifiers from the cap layer. If this diffusion extends too far into the absorptive layer, the detector is rendered useless. The invention includes a photodetector with a buffer layer between the absorptive and cap layers. The concentration of conductivity modifiers is substantially constant in the cap layer, decreases with distance in the buffer layer from the cap layer and extends into the absorptive layer. The invention also includes a method of making this device which includes the steps of forming a buffer layer over the absorptive layer, forming a cap layer over the buffer layer and diffusing the opposite type conductivity modifiers from the cap layer into the buffer and absorptive layers.
摘要翻译： 光电检测器包括在吸收层上的盖层，其中通过从盖层扩散电导率改性剂而在吸收层中形成P-N结。 如果这种扩散扩展到吸收层太远，则检测器无效。 本发明包括在吸收层和盖层之间具有缓冲层的光电检测器。 电导率改性剂的浓度在盖层中基本上是恒定的，随缓冲层中的盖层距离而延伸到吸收层中。 本发明还包括制造该器件的方法，该方法包括以下步骤：在吸收层上形成缓冲层，在缓冲层上形成覆盖层，并将相对电导率改性剂从盖层扩散到缓冲层和吸收层。
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公开(公告)号：US4416012A
公开(公告)日：1983-11-15
申请号：US323058
申请日：1981-11-19
申请人： Dan Botez , Michael Ettenberg
发明人： Dan Botez , Michael Ettenberg
CPC分类号： H01S5/227 , H01S5/205 , H01S5/2275
摘要： The invention is an improved buried heterostructure laser wherein the improvement comprises a cladding layer which is interposed between the mesa and the burying region and has a refractive index less than that of the burying region and the effective refractive index of the fundamental transverse mode. The discrimination against higher order modes of propagation provided by the structure permits the use of a wider active layer and thus a larger emitting area.
摘要翻译： 本发明是一种改进的掩埋异质结构激光器，其中改进包括介于台面和掩埋区之间的包层，其折射率小于埋藏区的折射率和基本横模的有效折射率。 由结构提供的对高阶传播模式的区分允许使用更宽的有源层，因此使用较大的发射区域。
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公开(公告)号：US4300811A
公开(公告)日：1981-11-17
申请号：US86244
申请日：1979-10-18
CPC分类号： G02B6/4246 , H04B10/2504 , G02B6/29361
摘要： A thin plate of III-V direct-bandgap semiconductor, preferably with anti-reflective coatings, operates as superior optical filter for light having a wavelength which exceeds a given wavelength in the visible or infra-red spectrum. Such a filter is particularly suitable for use in a duplex optical communication system employing a fiber-optic transmission line.
摘要翻译： 优选具有抗反射涂层的III-V直接带隙半导体薄板作为具有超过可见光或红外光谱中的给定波长的波长的光的优良光学滤波器。 这种滤波器特别适用于采用光纤传输线的双工光通信系统。
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公开(公告)号：US3963536A
公开(公告)日：1976-06-15
申请号：US524758
申请日：1974-11-18
申请人： Michael Ettenberg , Henry Kressel
发明人： Michael Ettenberg , Henry Kressel
IPC分类号： H01L21/208 , H01L33/00 , H01L7/38
CPC分类号： H01L33/0062 , H01L21/02395 , H01L21/02502 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02625 , H01L21/02628
摘要： In making electroluminescent devices comprised of layers of semiconductor material of different conductivity types, the layers are formed by a liquid phase epitaxy process in which the layer growth rate is accelerated by means of rapid cooling. The rapid cooling during deposition results in a device having resistance to the gradual degradation of light emission.
摘要翻译： 在制造由不同导电类型的半导体材料层构成的电致发光器件时，通过液相外延法形成层，其中通过快速冷却来加速层生长速率。 沉积期间的快速冷却导致具有耐发光逐渐劣化的装置。
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公开(公告)号：US4233614A
公开(公告)日：1980-11-11
申请号：US18055
申请日：1979-03-06
申请人： Dan Botez , Michael Ettenberg , Henry Kressel
发明人： Dan Botez , Michael Ettenberg , Henry Kressel
摘要： A light emitting diode includes a substrate having a body of single crystalline semiconductor material, preferably a Group III-V compound or alloy thereof, on a surface of the substrate. The body includes a window layer directly on the substrate and one or more other layers on the window layer. The layers of the body are of appropriate conductivety types to form a recombination region in which light can be generated. The substrate has an opening therethrough to the window layer. The window layer is of a material which is substantially transparent to the light generated in the recombination region and is of a thickness, 15 to 30 microns, to provide rigidity to the diode.
摘要翻译： 发光二极管包括在衬底的表面上具有单晶半导体材料体，优选III-V族化合物或其合金的衬底。 主体包括直接在基板上的窗口层和窗口层上的一个或多个其它层。 身体的各层具有适当的导电性类型，以形成能够产生光的复合区域。 衬底具有穿过其穿过窗口层的开口。 窗口层是对复合区域中产生的光基本透明的材料，其厚度为15-30微米，以提供二极管的刚性。
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公开(公告)号：US4195269A
公开(公告)日：1980-03-25
申请号：US897808
申请日：1978-04-19
申请人： Michael Ettenberg , Henry Kressel
发明人： Michael Ettenberg , Henry Kressel
CPC分类号： H04B10/2587
摘要： An injection laser diode is at one end of an optical fiber to direct modulated optical radiation into the fiber. At the other end of the fiber is a detector, such as a semiconductor photodetector, for the modulated radiation. Between the other end of the optical fiber and the detector is a reflecting shutter which is adapted to periodically reflect some of the radiation, at a lower frequency rate, back along the optical fiber to the injection laser. The radiation reflected back into the injection laser causes a variation in the characteristics of the laser so that the laser operates as a detector for the reflected radiation.
摘要翻译： 注入激光二极管位于光纤的一端，以将调制的光辐射引导到光纤中。 在纤维的另一端是用于调制辐射的检测器，例如半导体光电检测器。 在光纤的另一端和检测器之间的是反射快门，其适于以较低的频率周期地反射沿着光纤向注射激光器返回的一些辐射。 反射回注入激光器的辐射导致激光器特性的变化，使得激光器作为反射辐射的检测器工作。
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公开(公告)号：US4092659A
公开(公告)日：1978-05-30
申请号：US791944
申请日：1977-04-28
申请人： Michael Ettenberg
发明人： Michael Ettenberg
CPC分类号： H01L33/46 , H01S5/028 , H05B33/24 , H01L33/465
摘要： A reflector of optical radiation is on at least one radiation emitting facet of an electroluminescent device. The reflector includes a plurality of contiguous layers of alternating composition. The layers are of silicon and a material selected from the group consisting of aluminum oxide, magnesium fluoride and silicon dioxide. Each of the layers is approximately .lambda./4n in thickness where ".lambda." is the free space wavelength of radiation emitted from the electroluminescent device, and "n" is the index of refraction of the layer. Two of the alternating contiguous layers provide a reflector which is partially reflecting, while six of the layers provide a reflector substantially reflecting to optical radiation.
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10.发明授权
公开(公告)号：US4048627A
公开(公告)日：1977-09-13
申请号：US632812
申请日：1975-11-17
CPC分类号： H01S5/227 , H01L33/145 , H01S5/2275
摘要： A body of semiconductor material has opposed end surfaces, opposed side surfaces extending to the end surfaces and opposed first and second contact surfaces which are substantially perpendicular to the end and side surfaces. The body includes a substrate having on a surface thereof a mesa shaped active region which extends to the first contact surface. The active region has side surfaces which are spaced from the side surfaces of the body. Also on the substrate are passive regions which extend from the side surfaces of the active region to the first contact surface and side surfaces of the body. The active region has a P-N junction therein. The passive regions each include a plurality of contiguous passive layers having, P-N junctions therebetween. The P-N junctions of the passive regions extend from the first contact surface to the side surface of the body. Metallic electrodes are on each of the contact surfaces. The passive regions serve to restrict current flow to the active region.
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