Electroluminescent semiconductor device having a restricted current flow
    1.
    发明授权
    Electroluminescent semiconductor device having a restricted current flow 失效
    具有限流电流的电致发光半导体器件

    公开(公告)号:US4048627A

    公开(公告)日:1977-09-13

    申请号:US632812

    申请日:1975-11-17

    IPC分类号: H01L33/14 H01S5/227 H01L33/00

    摘要: A body of semiconductor material has opposed end surfaces, opposed side surfaces extending to the end surfaces and opposed first and second contact surfaces which are substantially perpendicular to the end and side surfaces. The body includes a substrate having on a surface thereof a mesa shaped active region which extends to the first contact surface. The active region has side surfaces which are spaced from the side surfaces of the body. Also on the substrate are passive regions which extend from the side surfaces of the active region to the first contact surface and side surfaces of the body. The active region has a P-N junction therein. The passive regions each include a plurality of contiguous passive layers having, P-N junctions therebetween. The P-N junctions of the passive regions extend from the first contact surface to the side surface of the body. Metallic electrodes are on each of the contact surfaces. The passive regions serve to restrict current flow to the active region.

    Light emitting diode with reflector
    3.
    发明授权
    Light emitting diode with reflector 失效
    带反射器的发光二极管

    公开(公告)号:US3991339A

    公开(公告)日:1976-11-09

    申请号:US581044

    申请日:1975-05-27

    摘要: An electroluminescent semiconductor device having an optical axis includes two cylindrical surface segments spaced from and opposite each other. One of the cylindrical surface segments is the light emitting surface with a center of curvature C.sub.1 and a focal point, f, on the optical axis. The other cylindrical surface segment is a light reflecting surface having a center of curvature C.sub.2 on the optical axis. The electroaluminescent device has a pair of flat surfaces, spaced from each other and substantially perpendicular to the light emitting and reflecting surfaces. On one of the flat surfaces is a first electrical contact. On a portion of the opposite flat surface is a second electrical contact which is positioned along the optical axis on or between the center of curvature C.sub.1 and the focal point f. Light is generated in the electroluminescent device in the area of the second contact. Preferably, if the focal point f and center of curvature C.sub.2 are at the same location on the optical axis the benefits to light emission are two fold. First, the light emitted from such a point will be collimated and secondly light striking the reflected surface will be reflected back to the focal point f thereby improving the possibility of its emission as collimated light.

    摘要翻译: 具有光轴的电致发光半导体器件包括彼此间隔开并彼此相对的两个圆柱形表面片段。 其中一个圆柱形表面段是具有曲率中心C1和焦点f在光轴上的发光表面。 另一个圆柱形表面段是在光轴上具有曲率中心C2的光反射表面。 电致发光器件具有彼此间隔开并基本上垂直于发光和反射表面的一对平坦表面。 其中一个平面是第一个电接点。 在相对的平坦表面的一部分上是在曲率中心C1和焦点f之间或之间沿光轴定位的第二电接触。 在第二接触区域中的电致发光器件中产生光。 优选地,如果焦点f和曲率中心C2在光轴上处于相同位置,则对发光的益处是两倍。 首先,从这样一点发射的光将被准直,其次光线照射到反射面将被反射回到焦点f,从而提高作为准直光发射的可能性。

    Semiconductor injection laser
    4.
    发明授权
    Semiconductor injection laser 失效
    半导体注入激光器

    公开(公告)号:US3938172A

    公开(公告)日:1976-02-10

    申请号:US472292

    申请日:1974-05-22

    IPC分类号: H01S5/323 H01S3/19 H01L29/161

    CPC分类号: H01S5/323

    摘要: A body of single crystalline semiconductor material having spaced opposed end surfaces which form a Fabry-Perot cavity. The body includes four contiguous regions of alternating conductivity type forming three PN junctions which extend between the end surfaces of the body. Along one of the PN junctions at least a portion of at least one of the regions is a recombination zone where light is generated upon the recombination of oppositely charged carriers when the PN junctions are forwardly biased to inject one type of charged carriers into the recombination zone. Along at least one side of the recombination zone is a zone having an index of refraction lower than the index of refraction of the recombination zone to confine light in the recombination zone. Also, along one side of the recombination zone is a zone which confines the injected charged carriers in the recombination zone.

    摘要翻译: 具有间隔开的相对端面的单晶半导体材料体形成法布里 - 珀罗腔。 主体包括交替导电类型的四个连续区域,形成在身体的端面之间延伸的三个PN结。 沿着PN结中的一个,至少一个区域的至少一部分是复合区,其中当PN结正向偏置以将一种类型的带电载流子注入复合区时,在相反电荷的载流子的复合时产生光 。 沿着复合区的至少一侧是具有折射率低于复合区的折射率以将光限制在复合区中的区。 此外,沿复合区的一侧是将注入的带电载流子限制在复合区中的区域。

    Stripe contact providing a uniform current density
    5.
    发明授权
    Stripe contact providing a uniform current density 失效
    条纹接触提供均匀的电流密度

    公开(公告)号:US4092561A

    公开(公告)日:1978-05-30

    申请号:US615682

    申请日:1975-09-22

    摘要: A semiconductor electroluminescent device includes a body having a pair of spaced end surfaces, at least one of which is capable of emitting light generated in the body and a recombination region in the body extending from one end surface to the other end surface. The body also includes a pair of spaced contacting surfaces which are approximately perpendicular to the end surfaces. On one of the contacting surfaces is a stripe contact which includes a plurality of spaced, parallel electrically conductive sub-stripes extending from one of the end surfaces to the other end surface with insulation between the sub-stripes. The sub-stripes may be conductive films on the surface of the body or conductive regions within the body. The width of the sub-stripes and the spacing therebetween along the end surfaces, are such that the stripe contact provides a substantially uniform current density at the recombination region of the device.

    摘要翻译: 半导体电致发光器件包括具有一对间隔开的端面的主体,其中至少一个能够发射在本体中产生的光,以及主体中的复合区域,其从一个端面延伸到另一端面。 主体还包括大致垂直于端面的一对隔开的接触表面。 在一个接触表面上是条状接触件,其包括多个间隔开的平行的导电子条纹,其从一个端面延伸到另一个端面,并且在子条纹之间具有绝缘性。 子条纹可以是主体表面上的导电膜或体内的导电区域。 子条纹的宽度及其端面之间的间隔使得带状接触在器件的复合区域提供基本均匀的电流密度。