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1.发明授权Electroluminescent edge-emitting diode comprising a light reflector in a groove 失效电致发光边缘发光二极管，其包括凹槽中的光反射器
公开(公告)号：US3974514A
公开(公告)日：1976-08-10
申请号：US531614
申请日：1974-12-11
申请人： Henry Kressel , Michael Ettenberg , Ivan Ladany
发明人： Henry Kressel , Michael Ettenberg , Ivan Ladany
摘要： A body of semiconductor material having a very limited contact region. The contact region is adjacent an emitting surface of the body, is spaced from the sides of the body and extends no more than one-quarter the distance from the emitting surface to a surface opposite the emitting surface. That portion of the body in the vicinity of the contact region is the active region of the diode. The smaller the active region, relative to the total size of the body, the less the internal absorption of generated light in the body. A groove can be provided across the body adjacent to that end of the contact region opposite from the emitting surface. In the groove is a metallic layer which functions as a light reflector. Any light generated in the body striking the metallic surface may be reflected out to the emitting surface of the body.
摘要翻译： 具有非常有限接触区域的半导体材料体。 接触区域邻近主体的发射表面，与主体的侧面间隔开并且延伸不超过发射表面到与发射表面相对的表面的距离的四分之一。 接触区域附近的物体的该部分是二极管的有源区。 活性区域相对于身体的总体积越小，体内产生的光的内部吸收越少。 可以在与发射表面相对的接触区域的该端部附近的主体上设置凹槽。 在凹槽中是用作光反射器的金属层。 在身体中产生的撞击金属表面的任何光可以被反射到身体的发射表面。
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公开(公告)号：US4178564A
公开(公告)日：1979-12-11
申请号：US649324
申请日：1976-01-15
CPC分类号： H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A body of semiconductor material of an injection laser device, capable of operating at a power level up to a few milliwatts per micrometer of emitting width, has two opposed facet surfaces. On at least one of the facet surfaces is a protection layer of an insulating material having an optical thickness equal to approximately one-half the vacuum wavelength of the optical radiation emitted by the device.
摘要翻译： 注射激光装置的半导体材料体，能够以每毫米发射宽度高达几毫瓦的功率水平运行，具有两个相对的小面。 在至少一个小面表面上是绝缘材料的保护层，其光学厚度等于由器件发射的光辐射的真空波长的大约二分之一。
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公开(公告)号：US4131904A
公开(公告)日：1978-12-26
申请号：US811289
申请日：1977-06-29
申请人： Ivan Ladany , Henry Kressel
发明人： Ivan Ladany , Henry Kressel
CPC分类号： H01L33/305
摘要： The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of zinc and germanium provide an electroluminescent device having improved reliability. In the method of fabricating the P type conductivity layer, the zinc and germanium are simultaneously introduced into the layer during deposition of the layer.
摘要翻译： P型导电层或电致发光器件的层包括锌作为主导电性改性剂，锗作为二次电导率调节剂。 锌和锗的组合提供了具有改进的可靠性的电致发光器件。 在制造P型导电层的方法中，在层的沉积期间，锌和锗同时被引入层中。
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公开(公告)号：US4049994A
公开(公告)日：1977-09-20
申请号：US652224
申请日：1976-01-26
申请人： Ivan Ladany
发明人： Ivan Ladany
CPC分类号： H01L33/0025
摘要： A body of semiconductor material of an electroluminescent device is on a gallium arsenide substrate of N type conductivity. The body includes a first region of N type conductivity aluminum gallium arsenide contiguous to a surface of the substrate and a second region of silicon doped P type gallium arsenide on the first region and spaced from the substrate. The P-N junction between the first and second regions is a heterojunction, and is the only heterojunction with the second region. The second region is of a thickness, extending from the P-N junction, in the range of 50 to 200 micrometers. The electroluminescent device is capable of transient response time of 0.2 microseconds or less.
摘要翻译： 电致发光器件的半导体材料体在N型导电性的砷化镓衬底上。 主体包括与基板的表面相邻的N型导电性砷化镓铝的第一区域和在第一区域上与衬底间隔开的第二硅掺杂P型砷化镓区域。 第一和第二区域之间的P-N结是异质结，并且是与第二区域唯一的异质结。 第二区域具有从P-N结延伸的厚度，在50至200微米的范围内。 电致发光器件能够具有0.2微秒或更短的瞬态响应时间。
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公开(公告)号：US5311610A
公开(公告)日：1994-05-10
申请号：US41027
申请日：1993-03-31
申请人： Ivan Ladany , Leslie A. Reith
发明人： Ivan Ladany , Leslie A. Reith
CPC分类号： G02B6/3855 , G02B6/4236 , H01L2224/48091 , H01L2224/48137 , H01L2924/3025
摘要： An electrooptical device, such as a semiconductor laser, and an optical fiber are packaged together in light coupling alignment using an electrolytic technique that avoids heat-induced stresses that commonly result from joining methods that employ welding, soldering, or catalytic adhesive compositions. The particular technique of this invention also avoids the need to encapsulate the electrooptical device within an index matching gel to protect it from the electrolytic plating solution thereby enabling optical devices such as lenses, isolators, filters, etc, to be incorporated in the package. The electrooptical device is mounted onto a common metallic base and the optical device is mounted within the bore of a tubular metallic support member. This support member is affixed to the base by means of nodes of a flexible conductive gel and is positioned relative to the electrooptical device for maximum light coupling between the device and the optical fiber within the support member. A non-metallic bottomless container is disposed on the base over the support member and the nodes of conductive gel (but not over the electrooptical device) to form a liquid-tight interior region for containing a low-stress electrolytic plating solution. The base, the nodes of conductive gel and the portion of the fiber support member within the container form the cathode in a plating circuit and are plated together to fix the alignment of the device and the fiber at its optimum coupling position.
摘要翻译： 诸如半导体激光器和光纤的电光器件使用电解技术以光耦合对准封装在一起，该电解技术避免了通常由使用焊接，焊接或催化粘合剂组合物的接合方法引起的热引起的应力。 本发明的特定技术还避免了将电光装置封装在折射率匹配凝胶内以保护其免受电解镀液的需要，从而使诸如透镜，隔离器，滤光片等的光学装置能够被包含在封装中。 电光装置安装在公共金属基座上，并且光学装置安装在管状金属支撑构件的孔内。 该支撑构件通过柔性导电凝胶的节点固定到基座上，并且相对于电光装置定位，以在装置和支撑构件内的光纤之间实现最大的光耦合。 将非金属无底容器设置在支撑构件和导电凝胶的节点（但不在电光学装置上）的基部上，以形成用于容纳低应力电解电镀溶液的液密内部区域。 基底，导电凝胶的节点和容器内的纤维支撑构件的部分在电镀电路中形成阴极，并且被电镀在一起以将装置和纤维的对准固定在其最佳耦合位置。
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公开(公告)号：US4265699A
公开(公告)日：1981-05-05
申请号：US36058
申请日：1979-05-04
申请人： Ivan Ladany
发明人： Ivan Ladany
CPC分类号： C03C25/68 , G02B6/4203
摘要： A method for reducing the diameter of the end of an optical fiber while leaving the fiber end flat or slightly concave so that a lens can be formed thereon. The fiber end is etched in a solution of aqueous hydrofluoric acid to which is added ammonium fluoride, ammonium bifluoride or a combination thereof.
摘要翻译： 一种用于减小光纤端部的直径同时使纤维端部平坦或稍微凹进的方法，从而可以在其上形成透镜。 将纤维端蚀刻在加入氟化铵，氟化铵或其组合的氢氟酸水溶液中。
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公开(公告)号：US4149929A
公开(公告)日：1979-04-17
申请号：US915799
申请日：1978-06-15
申请人： Ivan Ladany
发明人： Ivan Ladany
CPC分类号： G02B6/245
摘要： A method of removing the protective polymeric layers of an optical fiber comprises contacting the fiber with a mixture of sulphuric acid and hydrogen peroxide to remove the outer protective coating followed by contacting the remaining protective coating with concentrated sulphuric acid.
摘要翻译： 去除光纤的保护性聚合物层的方法包括使纤维与硫酸和过氧化氢的混合物接触以除去外部保护涂层，然后将剩余的保护涂层与浓硫酸接触。
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公开(公告)号：US5048919A
公开(公告)日：1991-09-17
申请号：US593787
申请日：1990-10-05
申请人： Ivan Ladany
发明人： Ivan Ladany
CPC分类号： G02B6/2558 , G02B6/4202 , G02B6/4212 , H01L2224/48091 , H01L2224/48465 , Y10T403/69
摘要： Means for coupling an electrooptical device, such as a semiconductor laser, to an optical fiber avoids heat-induced stresses that commonly result from joining methods employing welding, soldering, or catalytic adhesive compositions. In this invention, the electrooptical device and fiber are firmly mounted within separate elements, such as copper tubes, by means of potting compound or the like, and after close end-to-end supported alignment of the device and fiber elements to obtain optimum light coupling, the assemblage is immersed in an electrolytic plating solution. Plating current is then applied and maintained until a sufficiently strong layer of plating metal encompasses the tubular elements and thereby rigidly fixes the alignment of the device and fiber end at its optimum position. Since the plating operation proceeds in a substantially isothermic environment, there is no misaligning stress introduced which would otherwise degrade the coupling efficiency.
摘要翻译： 将诸如半导体激光器之类的电光器件耦合到光纤的装置避免了通常由使用焊接，焊接或催化粘合剂组合物的接合方法引起的热引起的应力。 在本发明中，电光装置和光纤通过灌封化合物等牢固地安装在诸如铜管的分离的元件内，并且在器件和光纤元件的端对端支持的对准之后以获得最佳光 将组合物浸入电解电镀溶液中。 然后施加和保持电镀电流，直到足够强的电镀金属层包围管状元件，从而将器件和光纤端的对准刚性地固定在其最佳位置。 由于电镀操作在基本上等温的环境中进行，所以不会引入不对准的应力，否则会降低耦合效率。
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公开(公告)号：US3975555A
公开(公告)日：1976-08-17
申请号：US549494
申请日：1975-02-12
CPC分类号： H01L33/40 , Y10S148/02
摘要： An electrical contact having low electrical resistance and low optical absorption is fabricated on a semiconductor electroluminescent article of III-V semiconductor material having a P-type region and an N-type region contiguous to each other, with a P-N junction therebetween. In the method of forming the contact, Zn is diffused into a surface of the P-type region opposite the PN junction. Then, a layer of gold is evaporated onto the Zn diffused surface while the device is at a temperature of approximately 400.degree.C.
摘要翻译： 在具有彼此相邻的P型区域和N型区域的III-V族半导体材料的半导体电致发光体上制造具有低电阻和低光吸收的电接触，其间具有P-N结。 在形成接触的方法中，Zn扩散到与PN结相对的P型区域的表面。 然后，当该装置处于约400℃的温度时，一层金被蒸发到Zn扩散的表面上
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公开(公告)号：US3959522A
公开(公告)日：1976-05-25
申请号：US573387
申请日：1975-04-30
IPC分类号： H01L21/285 , H01L21/60 , B05D5/12
CPC分类号： H01L24/80 , H01L21/28575 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01079 , H01L2924/014 , H01L2924/10329 , Y10S148/02
摘要： Gold is deposited onto a heated surface of N type semiconductor material composed of either gallium arsenide, gallium phosphide, aluminum gallium arsenide or aluminum gallium phosphide. The surface of the gallium compound is cooled to room temperature whereupon tin is deposited onto the gold. The semiconductor material is then reheated until the tin alloys with and through the gold into the material. A solderable surface may be applied to the semiconductor material by applying a film nickel and then a film of gold onto the alloyed surface.
摘要翻译： 金沉积在由砷化镓，磷化镓，砷化铝镓或磷化铝镓组成的N型半导体材料的加热表面上。 将镓化合物的表面冷却至室温，然后将锡沉积在金上。 然后将半导体材料再加热直到锡合金与金并通过金成材料。 可以将可焊接表面施加到半导体材料上，方法是在合金表面上施加薄膜镍，然后施加金膜。
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