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公开(公告)号：US4597004A
公开(公告)日：1986-06-24
申请号：US707795
申请日：1985-03-04
IPC分类号： H01L31/0352 , H01L31/103 , H01L27/14 , H01L31/00
CPC分类号： H01L31/035281 , H01L31/1035 , Y02E10/50
摘要： A photodetector includes a cap layer over an absorptive layer with the P-N junction formed in the absorptive layer by diffusion of conductivity modifiers from the cap layer. If this diffusion extends too far into the absorptive layer, the detector is rendered useless. The invention includes a photodetector with a buffer layer between the absorptive and cap layers. The concentration of conductivity modifiers is substantially constant in the cap layer, decreases with distance in the buffer layer from the cap layer and extends into the absorptive layer. The invention also includes a method of making this device which includes the steps of forming a buffer layer over the absorptive layer, forming a cap layer over the buffer layer and diffusing the opposite type conductivity modifiers from the cap layer into the buffer and absorptive layers.
摘要翻译： 光电检测器包括在吸收层上的盖层，其中通过从盖层扩散电导率改性剂而在吸收层中形成P-N结。 如果这种扩散扩展到吸收层太远，则检测器无效。 本发明包括在吸收层和盖层之间具有缓冲层的光电检测器。 电导率改性剂的浓度在盖层中基本上是恒定的，随缓冲层中的盖层距离而延伸到吸收层中。 本发明还包括制造该器件的方法，该方法包括以下步骤：在吸收层上形成缓冲层，在缓冲层上形成覆盖层，并将相对电导率改性剂从盖层扩散到缓冲层和吸收层。
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公开(公告)号：US4761680A
公开(公告)日：1988-08-02
申请号：US912633
申请日：1986-09-29
IPC分类号： H01L31/105 , H01L31/109 , H01L27/14 , H01L31/00
CPC分类号： H01L31/109 , H01L31/105
摘要： A photodetector comprising a light absorptive region, a wide bandgap region adjacent to the light absorptive region and a region of a first conductivity type extending through the wide bandgap region into the light absorptive region is improved by the incorporation of a lattice matched, intermediate bandgap region between the wide bandgap region and the light absorptive region. The p-n junction lies in the intermediate bandgap region in proximity to the interface thereof with the light absorptive region. The quantum efficiency of the disclosed device is significantly improved over prior art devices.
摘要翻译： 包括光吸收区域，与光吸收区域相邻的宽带隙区域和延伸穿过宽带隙区域进入光吸收区域的第一导电类型区域的光电检测器通过掺入晶格匹配的中间带隙区域而得到改善 在宽带隙区域和光吸收区域之间。 p-n结位于其与光吸收区域的界面附近的中间带隙区域中。 所公开的器件的量子效率比现有技术的器件显着改善。
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公开(公告)号：US4699675A
公开(公告)日：1987-10-13
申请号：US813409
申请日：1985-12-26
申请人： Paul A. Longeway
发明人： Paul A. Longeway
IPC分类号： C30B25/02 , H01L21/203
CPC分类号： C30B25/02 , C30B29/40 , Y10S117/90
摘要： The fabrication of a layer of a III-V semiconductor material by vapor phase epitaxy is improved by precoating the walls of the deposition chamber in a suitable apparatus with the desired material. The coating of the deposition chamber is continued until the material being deposited is depth-uniform and of the same composition as the desired layer. Material then deposited on the substrate is free of depth compositional gradient. In a further improvement, the walls of the deposition chamber of the apparatus are roughened, thus providing nucleation sites for the growing coating and substantially reducing the time required to precoat the walls of the deposition chamber.
摘要翻译： 通过气相外延制备III-V半导体材料的层可以通过在具有所需材料的合适的装置中预涂覆沉积室的壁来改进。 沉积室的涂层继续进行，直到沉积的材料是深度均匀且与所需层具有相同的组成。 然后沉积在基底上的材料没有深度组成梯度。 在进一步的改进中，设备的沉积室的壁被粗糙化，从而为生长涂层提供成核位置，并且显着减少了预沉积沉积室壁所需的时间。
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公开(公告)号：US4547648A
公开(公告)日：1985-10-15
申请号：US470572
申请日：1983-02-28
申请人： Paul A. Longeway
发明人： Paul A. Longeway
摘要： A thickness monitor useful in deposition or etching reactor systems comprising a crystal-controlled oscillator in which the crystal is deposited or etched to change the frequency of the oscillator. The crystal rests within a thermally conductive metallic housing and arranged to be temperature controlled. Electrode contacts are made to the surface primarily by gravity force such that the crystal is substantially free of stress otherwise induced by high temperature.
摘要翻译： 一种用于沉积或蚀刻反应堆系统的厚度监测器，包括晶体被沉积或蚀刻以改变振荡器频率的晶体振荡器。 晶体位于导热金属外壳内，并被设置为受温度控制。 电极触点主要通过重力作用于表面，使得晶体基本上不受高温引起的应力。
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