公开(公告)号：US20080175044A1

公开(公告)日：2008-07-24

申请号：US11970550

申请日：2008-01-08

Applicant: Sadamichi MAEKAWA ,  Saburo Takahashi ,  Hiroshi Imamura ,  Masahiko Ichimura ,  Hiromasa Takahashi

Inventor： Sadamichi MAEKAWA ,  Saburo Takahashi ,  Hiroshi Imamura ,  Masahiko Ichimura ,  Hiromasa Takahashi

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal. Reading is performed by detecting a magnetic resistance attributable to a change in relative magnetization direction between the first magnetization pinned terminal and the magnetization free terminal.

Abstract translation: 本发明的目的在于减少存储单元的热量波动，从而当不使用反转磁场的磁化反转处理用于写入存储单元时提供稳定的写入操作。 磁存储单元的结构是将第一和第二磁化锁定端子与它们之间的空间连接到非磁性区域的一个表面，并且无磁性端子连接到另一个表面。 第一和第二磁化钉扎端子的磁化方向彼此反平行。 通过控制通过非磁性区域在第一和第二磁化被固定端子之间流动的电流的极性，从而使无磁性端子的磁化反转来进行写入。 通过检测归因于第一磁化固定端子和无磁化端子之间的相对磁化方向的变化的磁阻来执行读取。

公开(公告)号：US06299990B1

公开(公告)日：2001-10-09

申请号：US09375439

申请日：1999-08-17

Applicant: Satoshi Watanabe ,  Toshiyuki Onogi ,  Masahiko Ichimura ,  Yoshimasa Ono ,  Tomihiro Hashizume ,  Yasuo Wada ,  Yuji Suwa

Inventor： Satoshi Watanabe ,  Toshiyuki Onogi ,  Masahiko Ichimura ,  Yoshimasa Ono ,  Tomihiro Hashizume ,  Yasuo Wada ,  Yuji Suwa

IPC: G11B566

CPC classification number: B82Y30/00 ,  B82B1/00 ,  B82B3/00 ,  B82Y15/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/3945 ,  G11B5/3961 ,  G11B5/3967 ,  G11B5/49 ,  G11B5/4984 ,  G11B2005/0005 ,  H01F1/0036 ,  H01F1/0302 ,  Y10S428/90 ,  Y10T428/1136 ,  Y10T428/1193 ,  Y10T428/32

Abstract: A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

Abstract translation: 铁磁材料可以以原子尺寸的数量级的非常小的尺寸形成，并且能够被稳定地磁化。 铁磁材料包括各自由与第一原子（11）相同类型的第一原子（11），第二原子（12）和与第一原子（11）相同种类的第二原子（12）和相同种类的第一原子（或原子团） 作为第一原子（11）或与第一原子（11）不同的一种。 在每个基本单元结构中，原子布置在基板的表面上，使得在第一原子或分子与第三原子或分子之间形成化学键（14），在第一原子或分子与第三原子或分子之间形成化学键（14）， 在第一和第二原子或分子之间形成第二原子或分子和第三原子或分子，以及不通过第三原子的化学键或电子通路（15），其中所述第三原子或分子由As原子 。

公开(公告)号：US06187458B1

公开(公告)日：2001-02-13

申请号：US09110183

申请日：1998-07-06

Applicant: Tomihiro Hashizume ,  Satoshi Watanabe ,  Toshiyuki Onogi ,  Yasuo Wada ,  Masahiko Ichimura ,  Yoshimasa Ono

Inventor： Tomihiro Hashizume ,  Satoshi Watanabe ,  Toshiyuki Onogi ,  Yasuo Wada ,  Masahiko Ichimura ,  Yoshimasa Ono

IPC: G11B566

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/62 ,  G11B5/64 ,  G11B5/74 ,  G11B5/855 ,  G11B2005/0002 ,  H01F1/0072 ,  H01F1/0081 ,  H01F1/009 ,  H01F10/3227 ,  Y10S428/90

Abstract: A ferromagnetic fine line has no loss of spontaneous magnetization even when fabricated ultra-small. The magnetization can be controlled by the proximity of the electrodes and the atomic level structure, and is protected from adsorption of impurities by embedding the ferromagnetic fine line in a nonmagnetic atomic layer.

Abstract translation: 铁磁细线即使制造超小，也不会有自发磁化的损失。 可以通过电极和原子水平结构的接近来控制磁化，并且通过将铁磁细线嵌入非磁性原子层中来防止杂质的吸附。

公开(公告)号：US07688623B2

公开(公告)日：2010-03-30

申请号：US11970550

申请日：2008-01-08

Applicant: Sadamichi Maekawa ,  Saburo Takahashi ,  Hiroshi Imamura ,  Masahiko Ichimura ,  Hiromasa Takahashi

Inventor： Sadamichi Maekawa ,  Saburo Takahashi ,  Hiroshi Imamura ,  Masahiko Ichimura ,  Hiromasa Takahashi

IPC: G11C11/14

CPC classification number: G11C11/16

Abstract: The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal. Reading is performed by detecting a magnetic resistance attributable to a change in relative magnetization direction between the first magnetization pinned terminal and the magnetization free terminal.

Abstract translation: 本发明的目的在于减少存储单元的热量波动，从而当不使用反转磁场的磁化反转处理用于写入存储单元时提供稳定的写入操作。 磁存储单元的结构是将第一和第二磁化锁定端子与它们之间的空间连接到非磁性区域的一个表面，并且无磁性端子连接到另一个表面。 第一和第二磁化钉扎端子的磁化方向彼此反平行。 通过控制通过非磁性区域在第一和第二磁化被固定端子之间流动的电流的极性，从而使无磁性端子的磁化反转来进行写入。 通过检测归因于第一磁化固定端子和无磁化端子之间的相对磁化方向的变化的磁阻来执行读取。

公开(公告)号：US07298594B2

公开(公告)日：2007-11-20

申请号：US10862323

申请日：2004-06-08

Applicant: Toshiyuki Onogi ,  Masahiko Ichimura ,  Tomihiro Hashizume

Inventor： Toshiyuki Onogi ,  Masahiko Ichimura ,  Tomihiro Hashizume

IPC: G11B5/127

CPC classification number: G11C19/0808 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/332 ,  G11B5/376 ,  G11B5/3903 ,  G11B5/3993 ,  G11B2005/3996 ,  G11C11/14 ,  H01L43/08

Abstract: Magnetoresistive devices with increased response sensitivity to external magnetic fields and an increased magnetoresistive ratio (MR ratio) to cope with rapid advances made in a highdensity magnetic recording device. A patterned dielectric layer is laminated in a flat shape on a substrate capable of being doped with carriers (holes) in an electric field, and an FET structure with gate electrodes is then fabricated on that dielectric layer, and the substrate spatially modulated by applying a nonuniform electrical field to induce a first ferromagnetic domain, a nonmiagnetic domain and a second ferromagnetic domain.

Abstract translation: 具有对外部磁场的响应灵敏度增加的磁阻器件和增加的磁阻比（MR比），以应对高密度磁记录装置中的快速进展。 在能够在电场中掺杂有载流子（空穴）的基板上的平坦形状层叠图案化的介电层，然后在该电介质层上制造具有栅电极的FET结构，并且通过施加空穴调制 不均匀电场以诱导第一铁磁畴，非磁畴和第二铁磁畴。

公开(公告)号：US20050196675A1

公开(公告)日：2005-09-08

申请号：US10928252

申请日：2004-08-30

Applicant: Tomihiro Hashizume ,  Masahiko Ichimura ,  Masahiro Kasai ,  Rikizo Hatakeyama ,  Yoshiyuki Kawazoe

Inventor： Tomihiro Hashizume ,  Masahiko Ichimura ,  Masahiro Kasai ,  Rikizo Hatakeyama ,  Yoshiyuki Kawazoe

IPC: H01M10/05 ,  B05D5/12 ,  C01B31/30 ,  H01M4/1393 ,  H01M4/36 ,  H01M4/587 ,  H01M4/58

CPC classification number: H01M4/587 ,  H01M4/1393

Abstract: A rechargeable lithium battery includes an anode doped with lithium ions in an amount corresponding to the irreversible capacity. The anode is produced by applying lithium ions to an anodic active carbonaceous material. The anode may be produced by applying a slurry of the anodic active material composition containing a carbonaceous material to an anodic collector, drying and compression-molding the resulting article, and applying lithium ions to the molded article. Alternatively, the lithium-doped anode may be produced by applying lithium ions in the production of a carbonaceous material to yield a carbonaceous material containing lithium ions, and mixing the same with a carbonaceous material containing no lithium ions. The resulting rechargeable lithium battery using, for example, amorphous carbon as an anodic active material and a lithium transition metal compound as a cathodic active material shows a reduced irreversible capacity.

Abstract translation: 可再充电锂电池包括掺杂有相当于不可逆容量的量的锂离子的阳极。 通过将锂离子施加到阳极活性碳质材料上来制造阳极。 阳极可以通过将含有碳质材料的阳极活性物质组合物的浆料施加到阳极集电体上，干燥和压缩所得制品，并将锂离子施加到模塑制品上来制备。 或者，掺杂锂的阳极可以通过在生产碳质材料中施加锂离子以产生含有锂离子的碳质材料，并将其与不含锂离子的碳质材料混合来制造。 使用例如作为阳极活性物质的无定形碳和作为阴极活性物质的锂过渡金属化合物的所得可再充电锂电池显示降低的不可逆容量。

公开(公告)号：US4151340A

公开(公告)日：1979-04-24

申请号：US870098

申请日：1978-01-17

Applicant: Masahiko Ichimura ,  Haruhisa Miyake ,  Shun-ichi Kodama ,  Michio Hisasue

Inventor： Masahiko Ichimura ,  Haruhisa Miyake ,  Shun-ichi Kodama ,  Michio Hisasue

IPC: C08F14/00 ,  C08F14/18 ,  C08F14/24 ,  C08F16/00 ,  C08F16/16 ,  C08F214/18 ,  C08F216/16 ,  C08F214/24 ,  C08F214/26

CPC classification number: C08F216/165 ,  C08F214/188 ,  Y10T428/31649 ,  Y10T428/31699 ,  Y10T428/31855

Abstract: A fluorocopolymer is produced by copolymerizing a fluoroolefin and cyclohexyl vinyl ether in the presence of a polymerization initiator at -30.degree. to +150.degree. C. at a molar ratio of the fluoroolefin to cyclohexyl vinyl ether in charge of 95:5 to 5:95.

Abstract translation: 氟聚烯烃与环己基乙烯基醚在聚合引发剂存在下，在-30至+ 150℃下以氟乙烯与环己基乙烯基醚的摩尔比为95:5至5:95的摩尔比共聚制得含氟共聚物 。

公开(公告)号：US20140132257A1

公开(公告)日：2014-05-15

申请号：US14079195

申请日：2013-11-13

Applicant: Ryoko SUGANO ,  Masahiko ICHIMURA ,  Akihiko KANDORI

Inventor： Ryoko SUGANO ,  Masahiko ICHIMURA ,  Akihiko KANDORI

IPC: G01R33/09

CPC classification number: G01R33/093

Abstract: To increase an output from a magnetoresistive element without using a special magnetic material, provided is a magnetic detection device including a magnetoresistive element including a ferromagnetic reference layer having a fixed magnetization direction, to which a spin wave induction layer is connected, so that the spin wave induction layer injects, into the ferromagnetic reference layer, electrons having spins in a specific direction by a spin electromotive force internally generated.

Abstract translation: 为了增加来自磁阻元件的输出而不使用特殊的磁性材料，提供了一种磁检测装置，其包括磁阻元件，磁阻元件包括具有固定磁化方向的铁磁参考层，自旋波感应层连接到该铁磁参考层，使得旋转 波感应层通过内部产生的自旋电动势向铁磁参考层中注入具有沿特定方向旋转的电子。

公开(公告)号：US20090161265A1

公开(公告)日：2009-06-25

申请号：US12314769

申请日：2008-12-16

Applicant: Ryoko Sugano ,  Masahiko Ichimura ,  Hiromasa Takahashi

Inventor： Ryoko Sugano ,  Masahiko Ichimura ,  Hiromasa Takahashi

IPC: G11B5/127 ,  G01R33/07

CPC classification number: G11B5/374 ,  G01R33/1284 ,  G11B5/378 ,  G11C11/161 ,  G11C11/18 ,  Y10T428/1107

Abstract: A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair.

Abstract translation: 磁传感器减少热波动，并使用仅配置有一个磁性层的简单结构的旋转霍尔器件来实现高灵敏度信号检测。 磁传感器包括层叠非磁性旋转霍尔层，非磁性绝缘体层和磁性层的叠层膜，与非磁性旋转霍尔层的侧面连接的电极非磁性端子对，以及施加电流的单元 在层叠膜的膜厚度方向上。 非磁性旋转霍尔层的厚度比构成非磁性旋转霍尔层的材料的自旋扩散长度的两倍更薄。 由于电极非磁性端子对的两端的电压的极性，检测由外部磁场磁化的磁性层的磁化方向。

公开(公告)号：US5968677A

公开(公告)日：1999-10-19

申请号：US993196

申请日：1997-12-18

Applicant: Satoshi Watanabe ,  Toshiyuki Onogi ,  Masahiko Ichimura ,  Yoshimasa Ono ,  Tomihiro Hashizume ,  Yasuo Wada

Inventor： Satoshi Watanabe ,  Toshiyuki Onogi ,  Masahiko Ichimura ,  Yoshimasa Ono ,  Tomihiro Hashizume ,  Yasuo Wada

IPC: B82B1/00 ,  B82B3/00 ,  G01Q60/16 ,  G11B5/00 ,  G11B5/39 ,  G11B5/49 ,  H01F1/00 ,  H01F1/03 ,  G11B5/66

CPC classification number: B82Y30/00 ,  B82B1/00 ,  B82B3/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/3945 ,  G11B5/3961 ,  G11B5/3967 ,  G11B5/49 ,  G11B5/4984 ,  H01F1/0036 ,  H01F1/0302 ,  G11B2005/0005 ,  Y10S428/90 ,  Y10S977/788 ,  Y10T428/1136

Abstract: A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or and the third atom or molecule, a chemical bond (14) is formed between the second atom and the third atom or molecule, a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom.

Abstract translation: 铁磁材料可以以原子尺寸的数量级的非常小的尺寸形成，并且能够被稳定地磁化。 铁磁材料包括各自由与第一原子（11）相同类型的第一原子（11），第二原子（12）和与第一原子（11）相同种类的第二原子（12）和相同种类的第一原子（或原子团） 作为第一原子（11）或与第一原子（11）不同的一种。 在每个基本单元结构中，原子布置在基板的表面上，使得在第一原子或第三原子或分子之间形成化学键（14），化学键（14）形成在 第二原子和第三原子或分子，在第一和第二原子之间形成化学键或不通过第三原子的电子通路（15）。