公开(公告)号：US08877340B2

公开(公告)日：2014-11-04

申请号：US12844029

申请日：2010-07-27

申请人： Jack O. Chu ,  Christos Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Chun-Yung Sung ,  Robert L. Wisnieff

发明人： Jack O. Chu ,  Christos Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Chun-Yung Sung ,  Robert L. Wisnieff

IPC分类号： B32B9/00

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02516 ,  Y10T428/30

摘要： A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry.

摘要翻译： 在具有非六边形对称性的结晶表面上形成石墨烯层。 晶体表面可以是单晶半导体碳化物层的表面。 单晶半导体碳化物层的非六边形对称表面在超高真空环境中在升高的温度下退火以形成石墨烯层。 在退火过程中，单晶半导体碳化物层的非六边形表面上的半导体原子对碳原子有选择性的蒸发。 随着半导体原子被选择性地去除，半导体 - 碳合金层表面上的碳浓度增加。 尽管半导体 - 碳合金层的表面具有非六边形对称性，但剩余的碳原子可以聚结形成具有六边形对称性的石墨烯层。

公开(公告)号：US20120028052A1

公开(公告)日：2012-02-02

申请号：US12844029

申请日：2010-07-27

申请人： Jack O. Chu ,  Christos Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Chun-Yung Sung ,  Robert L. Wisnieff

发明人： Jack O. Chu ,  Christos Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Chun-Yung Sung ,  Robert L. Wisnieff

IPC分类号： B32B17/06 ,  H01L21/20

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02516 ,  Y10T428/30

摘要： A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry.

公开(公告)号：US08541769B2

公开(公告)日：2013-09-24

申请号：US12942490

申请日：2010-11-09

申请人： Jack O. Chu ,  Christos D. Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Robert L. Wisnieff

发明人： Jack O. Chu ,  Christos D. Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Robert L. Wisnieff

IPC分类号： H01L29/12

CPC分类号： H01L21/02447 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/267

摘要： A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer.

摘要翻译： 单晶碳化硅层可以在单晶蓝宝石衬底上生长。 随后，在超高真空环境中的高温退火期间，可以通过转换单晶硅层的表面层来形成石墨烯层。 或者，石墨烯层可以沉积在单晶碳化硅层的暴露表面上。 石墨烯层也可以直接形成在蓝宝石衬底的表面上或直接在碳化硅衬底的表面上形成。 另外，也可以在半导体基板上的碳化​​硅层上形成石墨烯层。 直径为6英寸或更大的蓝宝石衬底和半导体衬底的商业可用性允许在商业可扩展的衬底上形成石墨烯层，用于使用石墨烯层的器件的低成本制造。

公开(公告)号：US20120112164A1

公开(公告)日：2012-05-10

申请号：US12942490

申请日：2010-11-09

申请人： Jack O. Chu ,  Christos D. Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Robert L. Wisnieff

发明人： Jack O. Chu ,  Christos D. Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Robert L. Wisnieff

IPC分类号： H01L29/12 ,  H01L21/04

CPC分类号： H01L21/02447 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/267

摘要： A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer.

摘要翻译： 单晶碳化硅层可以在单晶蓝宝石衬底上生长。 随后，在超高真空环境中的高温退火期间，可以通过转换单晶硅层的表面层来形成石墨烯层。 或者，石墨烯层可以沉积在单晶碳化硅层的暴露表面上。 石墨烯层也可以直接形成在蓝宝石衬底的表面上或直接在碳化硅衬底的表面上形成。 另外，也可以在半导体基板上的碳化​​硅层上形成石墨烯层。 直径为6英寸或更大的蓝宝石衬底和半导体衬底的商业可用性允许在商业可扩展的衬底上形成石墨烯层，用于使用石墨烯层的器件的低成本制造。

公开(公告)号：US08852342B2

公开(公告)日：2014-10-07

申请号：US12870967

申请日：2010-08-30

申请人： Christos D. Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Robert L. Wisnieff

发明人： Christos D. Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Robert L. Wisnieff

IPC分类号： H01L29/04 ,  H01L21/71 ,  H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L29/16 ,  H01L29/778

CPC分类号： H01L29/045 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L27/1266 ,  H01L29/1606 ,  H01L29/66068 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78684

摘要： A surface of a single crystalline semiconductor-carbon alloy layer having a surface normal along or close to a major crystallographic direction is provided by mechanical means such as cutting and/or polishing. Such a surface has naturally formed irregular surface features. Small semiconductor islands are deposited on the surface of single crystalline semiconductor-carbon alloy layer. Another single crystalline semiconductor-carbon alloy structure may be placed on the small semiconductor islands, and the assembly of the two semiconductor-carbon alloy layers with the semiconductor islands therebetween is annealed. During the initial phase of the anneal, surface diffusion of the semiconductor material proceeds to form vicinal surfaces while graphitization is suppressed because the space between the two semiconductor-carbon alloy layers maintains a high vapor pressure of the semiconductor material. Once all semiconductor material is consumed, graphitization occurs in which graphene layers can be formed on the vicinal surfaces having atomic level surface flatness.

摘要翻译： 通过诸如切割和/或抛光的机械方法提供具有沿着或接近主要晶体方向的表面法线的单晶半导体 - 碳合金层的表面。 这种表面具有自然形成的不规则表面特征。 小半导体岛沉积在单晶半导体 - 碳合金层的表面上。 另外的单晶半导体 - 碳合金结构可以放置在小的半导体岛上，并且两个半导体 - 碳合金层之间的半导体岛的组装被退火。 在退火的初始阶段期间，由于两个半导体 - 碳合金层之间的空间维持半导体材料的高蒸汽压力，所以半导体材料的表面扩散进行以形成邻近表面，同时石墨化被抑制。 一旦所有的半导体材料被消耗，就会发生石墨化，其中石墨烯层可以形成在具有原子级表面平坦度的连续表面上。

公开(公告)号：US20120319078A1

公开(公告)日：2012-12-20

申请号：US13596152

申请日：2012-08-28

申请人： Jack O. Chu ,  Christos Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Chun-Yung Sung ,  Robert L. Wisnieff

发明人： Jack O. Chu ,  Christos Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Chun-Yung Sung ,  Robert L. Wisnieff

IPC分类号： H01L29/06 ,  B82Y99/00

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02516 ,  Y10T428/30

摘要： A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry.

摘要翻译： 在具有非六边形对称性的结晶表面上形成石墨烯层。 晶体表面可以是单晶半导体碳化物层的表面。 单晶半导体碳化物层的非六边形对称表面在超高真空环境中在升高的温度下退火以形成石墨烯层。 在退火过程中，单晶半导体碳化物层的非六边形表面上的半导体原子对碳原子有选择性的蒸发。 随着半导体原子被选择性地去除，半导体 - 碳合金层表面上的碳浓度增加。 尽管半导体 - 碳合金层的表面具有非六边形对称性，但剩余的碳原子可以聚结形成具有六边形对称性的石墨烯层。

公开(公告)号：US20120049161A1

公开(公告)日：2012-03-01

申请号：US12870967

申请日：2010-08-30

申请人： Christos D. Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Robert L. Wisnieff

发明人： Christos D. Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Robert L. Wisnieff

IPC分类号： H01L29/04 ,  H01L21/71

CPC分类号： H01L29/045 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L27/1266 ,  H01L29/1606 ,  H01L29/66068 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78684

摘要： A surface of a single crystalline semiconductor-carbon alloy layer having a surface normal along or close to a major crystallographic direction is provided by mechanical means such as cutting and/or polishing. Such a surface has naturally formed irregular surface features. Small semiconductor islands are deposited on the surface of single crystalline semiconductor-carbon alloy layer. Another single crystalline semiconductor-carbon alloy structure may be placed on the small semiconductor islands, and the assembly of the two semiconductor-carbon alloy layers with the semiconductor islands therebetween is annealed. During the initial phase of the anneal, surface diffusion of the semiconductor material proceeds to form vicinal surfaces while graphitization is suppressed because the space between the two semiconductor-carbon alloy layers maintains a high vapor pressure of the semiconductor material. Once all semiconductor material is consumed, graphitization occurs in which graphene layers can be formed on the vicinal surfaces having atomic level surface flatness.

摘要翻译： 通过诸如切割和/或抛光的机械方法提供具有沿着或接近主要晶体方向的表面法线的单晶半导体 - 碳合金层的表面。 这种表面具有自然形成的不规则表面特征。 小半导体岛沉积在单晶半导体 - 碳合金层的表面上。 另外的单晶半导体 - 碳合金结构可以放置在小的半导体岛上，并且两个半导体 - 碳合金层之间的半导体岛的组装被退火。 在退火的初始阶段期间，由于两个半导体 - 碳合金层之间的空间维持半导体材料的高蒸汽压力，所以半导体材料的表面扩散进行以形成邻近表面，同时石墨化被抑制。 一旦所有的半导体材料被消耗，就会发生石墨化，其中石墨烯层可以形成在具有原子级表面平坦度的连续表面上。