公开(公告)号：US08097870B2

公开(公告)日：2012-01-17

申请号：US12402748

申请日：2009-03-12

Applicant: Christina Laura Hutchinson ,  Insik Jin ,  Lance Stover

Inventor： Christina Laura Hutchinson ,  Insik Jin ,  Lance Stover

IPC: H01L47/00

CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C13/00 ,  H01L27/222 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1675

Abstract: A memory cell that includes a memory element configured for switching from a first data state to a second data state by passage of current therethrough. The memory cell includes a top electrode and a bottom electrode for providing the current through the memory cell, and an alignment element positioned at least between the top electrode and the top surface of the memory element, the alignment element having an electrically conductive body tapering from the top electrode to the top surface of the memory element. Methods for forming the memory cell are also described.

Abstract translation: 一种存储单元，包括被配置为通过电流通过其从第一数据状态切换到第二数据状态的存储元件。 存储单元包括用于提供通过存储单元的电流的顶部电极和底部电极，以及至少位于存储元件的顶部电极和顶部表面之间的对准元件，该对准元件具有从 顶部电极到存储元件的顶表面。 还描述了形成存储单元的方法。

公开(公告)号：US07897955B2

公开(公告)日：2011-03-01

申请号：US12263562

申请日：2008-11-03

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: H01L47/00

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract translation: 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。

公开(公告)号：US20070196673A1

公开(公告)日：2007-08-23

申请号：US11357754

申请日：2006-02-17

Applicant: Mehmet Hancer ,  John Brand ,  Lance Stover

Inventor： Mehmet Hancer ,  John Brand ,  Lance Stover

IPC: B32B9/04

CPC classification number: C10M177/00 ,  C10M2201/04 ,  C10M2203/00 ,  C10M2211/06 ,  C10M2227/04 ,  C10N2230/06 ,  C10N2230/12 ,  C10N2240/204 ,  C10N2250/06 ,  C10N2250/141 ,  C10N2270/00 ,  Y10T428/31663

Abstract: The present invention is a lubricative and protective thin film often used within micro electromechanical systems. The film comprises an adhesion layer and a self-assembled monolayer, the self-assembled monolayer having a head group bonded to the adhesion layer and a tail group attached to the head group.

Abstract translation: 本发明是在微机电系统中经常使用的润滑和保护薄膜。 该膜包括粘附层和自组装单层，自组装单层具有与粘合层结合的头基和连接到头组的尾组。

公开(公告)号：US08124952B2

公开(公告)日：2012-02-28

申请号：US13014935

申请日：2011-01-27

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: H01L47/00

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

公开(公告)号：US20110121256A1

公开(公告)日：2011-05-26

申请号：US13014935

申请日：2011-01-27

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: H01L45/00

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract translation: 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。

公开(公告)号：US08124441B2

公开(公告)日：2012-02-28

申请号：US13014941

申请日：2011-01-27

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: H01L21/00

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract translation: 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。

公开(公告)号：US20100110759A1

公开(公告)日：2010-05-06

申请号：US12263562

申请日：2008-11-03

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: G11C11/00 ,  H01L47/00 ,  H01L29/76 ,  H01L21/00 ,  G11C11/34 ,  H01L21/4763

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract translation: 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。

公开(公告)号：US20050088784A1

公开(公告)日：2005-04-28

申请号：US10691164

申请日：2003-10-22

Applicant: Declan Macken ,  Jeremy Thurn ,  Lance Stover ,  Ned Tabat ,  John Pendray

Inventor： Declan Macken ,  Jeremy Thurn ,  Lance Stover ,  Ned Tabat ,  John Pendray

IPC: G11B5/187 ,  G11B5/31 ,  G11B5/56 ,  G11B5/60

CPC classification number: G11B5/6005 ,  G11B5/187 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/483

Abstract: A slider includes a slider body having a trailing edge and a leading edge. The slider also includes a thin film structure deposited in layers on the trailing edge. The thin film structure includes a write transducer configured to read and write to a storage medium. The thin film structure also includes a non-thermally activated actuator at least partially formed with the write transducer and configured to move the write transducer relative to the trailing edge.

Abstract translation: 滑块包括具有后缘和前缘的滑块体。 滑块还包括沉积在后缘上的层的薄膜结构。 薄膜结构包括配置成读取和写入存储介质的写入传感器。 薄膜结构还包括非热致动致动器，其至少部分地由写入传感器形成并被配置为相对于后缘移动写入传感器。

公开(公告)号：US20050057841A1

公开(公告)日：2005-03-17

申请号：US10662068

申请日：2003-09-12

Applicant: Lance Stover ,  Jane Gates ,  Ladislav Pust ,  John Brand

Inventor： Lance Stover ,  Jane Gates ,  Ladislav Pust ,  John Brand

IPC: G11B5/00 ,  G11B5/02 ,  G11B21/02

CPC classification number: G11B5/02 ,  G11B2005/001 ,  G11B2005/0021

Abstract: A head with a heating element and control regime therefor is disclosed. In embodiments described, the control regime or controller energizes the heater or heating element to provide intermittent heating between read or write operations to optimize transducer temperature and operating characteristics or parameters of a data storage device. In particular, in one embodiment described, the controller provides a low amplitude signal or current to provide low grade thermal heating. In another embodiment, the controller provides a high amplitude signal or current to preheat the transducer portion for write operations.

公开(公告)号：US20110117717A1

公开(公告)日：2011-05-19

申请号：US13014941

申请日：2011-01-27

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: H01L21/02

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.