公开(公告)号：US20110117717A1

公开(公告)日：2011-05-19

申请号：US13014941

申请日：2011-01-27

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: H01L21/02

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

公开(公告)号：US09564324B2

公开(公告)日：2017-02-07

申请号：US14220440

申请日：2014-03-20

Applicant: Eunsung Kim ,  Jaewoo Nam ,  Chulho Shin

Inventor： Eunsung Kim ,  Jaewoo Nam ,  Chulho Shin

IPC: H01L21/00 ,  H01L21/027 ,  H01L29/66 ,  H01L27/108 ,  H01L27/115

CPC classification number: H01L21/0271 ,  H01L27/10855 ,  H01L27/11582 ,  H01L29/66795

Abstract: The inventive concepts provide methods of forming a pattern. In the method, a block copolymer layer may be formed on a neutral layer having an uneven structure and then phase separation is induced. The neutral layer may have an affinity for all of a hydrophilic polymer and a hydrophobic polymer, so that vertical cultivation of phases of the block copolymer may be realized on the uneven structure. Thus, a self-assembled phenomenon may be induced.

Abstract translation: 本发明的概念提供了形成图案的方法。 在该方法中，可以在具有不均匀结构的中性层上形成嵌段共聚物层，然后诱发相分离。 中性层可以对所有亲水性聚合物和疏水性聚合物具有亲和力，从而可以在不均匀结构上实现嵌段共聚物的相的垂直培养。 因此，可能引起自组装现象。

公开(公告)号：US20130095433A1

公开(公告)日：2013-04-18

申请号：US13537618

申请日：2012-06-29

Applicant: Eunsung KIM ,  Kyoungseon KIM ,  Jaewoo NAM ,  Chulho SHIN ,  Shiyong YI

Inventor： Eunsung KIM ,  Kyoungseon KIM ,  Jaewoo NAM ,  Chulho SHIN ,  Shiyong YI

IPC: G03F7/20

CPC classification number: G03F7/20 ,  G03F7/0392 ,  G03F7/2028 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40

Abstract: A photolithography method includes coating a photoresist on an active region and an edge region of a wafer, exposing the photoresist on the edge region to first ultraviolet rays, exposing the photoresist on the active region to second ultraviolet rays, depositing a first developing solution on the photoresist on the edge region to remove the photoresist on the edge region, and developing the photoresist on the active region using a second developing solution.

Abstract translation: 光刻方法包括在晶片的有源区域和边缘区域上涂覆光致抗蚀剂，将边缘区域上的光致抗蚀剂暴露于第一紫外线，将活性区域上的光致抗蚀剂暴露于第二紫外线，将第一显影溶液沉积在 在边缘区域上的光致抗蚀剂去除边缘区域上的光致抗蚀剂，并且使用第二显影溶液在活性区域上显影光致抗蚀剂。

公开(公告)号：US20110001505A1

公开(公告)日：2011-01-06

申请号：US12829873

申请日：2010-07-02

Applicant: Jaewoo Nam

Inventor： Jaewoo Nam

IPC: G01R31/02

CPC classification number: G01R1/0483

Abstract: The present invention dicloses test sockets fabricated by MEMS technology for testing of semiconductor devices. Semiconductor device test sockets fabricated by MEMS technology in accordance with one or more embodiments of the invention offer many unique advantages over conventional test sockets (e.g. sockets utilizing pogo-pins). In one embodiment of the invention, a novel test socket includes a substrate with multiple cavities of certain depths in middle region of one side, electrical contacts (electrodes) of cantilever type directly above the cavities making individual contact with each contactor of semiconductor device, and multiple signal paths electrically connecting the cantilever type contacts on one side of the substrate and the loadboard PCB(printed circuit board) or motherboard PCB placed on the other side of the substrate.

Abstract translation: 本发明公开了通过MEMS技术制造的用于半导体器件测试的测试插座。 根据本发明的一个或多个实施例的通过MEMS技术制造的半导体器件测试插座与常规测试插座（例如，使用弹簧针的插座）相比提供了许多独特的优点。 在本发明的一个实施例中，一个新的测试插座包括一侧的中间区域具有一定深度的多个空腔的基板，直接位于空腔上方的悬臂式电触头（电极），与半导体器件的每个接触器单独接触;以及 多个信号路径电连接基板的一侧上的悬臂型触点和放置在基板另一侧的装载板PCB（印刷电路板）或主板PCB。

公开(公告)号：US08846305B2

公开(公告)日：2014-09-30

申请号：US13537618

申请日：2012-06-29

Applicant: Eunsung Kim ,  Kyoungseon Kim ,  Jaewoo Nam ,  Chulho Shin ,  Shiyong Yi

Inventor： Eunsung Kim ,  Kyoungseon Kim ,  Jaewoo Nam ,  Chulho Shin ,  Shiyong Yi

IPC: G03F7/26 ,  G03F7/20

CPC classification number: G03F7/20 ,  G03F7/0392 ,  G03F7/2028 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40

Abstract: A photolithography method includes coating a photoresist on an active region and an edge region of a wafer, exposing the photoresist on the edge region to first ultraviolet rays, exposing the photoresist on the active region to second ultraviolet rays, depositing a first developing solution on the photoresist on the edge region to remove the photoresist on the edge region, and developing the photoresist on the active region using a second developing solution.

Abstract translation: 光刻方法包括在晶片的有源区域和边缘区域上涂覆光致抗蚀剂，将边缘区域上的光致抗蚀剂暴露于第一紫外线，将活性区域上的光致抗蚀剂暴露于第二紫外线，将第一显影溶液沉积在 在边缘区域上的光致抗蚀剂去除边缘区域上的光致抗蚀剂，并且使用第二显影溶液在活性区域上显影光致抗蚀剂。

公开(公告)号：US07897955B2

公开(公告)日：2011-03-01

申请号：US12263562

申请日：2008-11-03

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: H01L47/00

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract translation: 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。

公开(公告)号：US08124952B2

公开(公告)日：2012-02-28

申请号：US13014935

申请日：2011-01-27

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: H01L47/00

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

公开(公告)号：US20110121256A1

公开(公告)日：2011-05-26

申请号：US13014935

申请日：2011-01-27

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: H01L45/00

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract translation: 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。

公开(公告)号：US20140370712A1

公开(公告)日：2014-12-18

申请号：US14220440

申请日：2014-03-20

Applicant: Eunsung KIM ,  Jaewoo NAM ,  Chulho SHIN

Inventor： Eunsung KIM ,  Jaewoo NAM ,  Chulho SHIN

IPC: H01L21/027

CPC classification number: H01L21/0271 ,  H01L27/10855 ,  H01L27/11582 ,  H01L29/66795

Abstract: The inventive concepts provide methods of forming a pattern. In the method, a block copolymer layer may be formed on a neutral layer having an uneven structure and then phase separation is induced. The neutral layer may have an affinity for all of a hydrophilic polymer and a hydrophobic polymer, so that vertical cultivation of phases of the block copolymer may be realized on the uneven structure. Thus, a self-assembled phenomenon may be induced.

Abstract translation: 本发明的概念提供了形成图案的方法。 在该方法中，可以在具有不均匀结构的中性层上形成嵌段共聚物层，然后诱发相分离。 中性层可以对所有亲水性聚合物和疏水性聚合物具有亲和力，从而可以在不均匀结构上实现嵌段共聚物的相的垂直培养。 因此，可能引起自组装现象。

公开(公告)号：US08124441B2

公开(公告)日：2012-02-28

申请号：US13014941

申请日：2011-01-27

Applicant: Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

Inventor： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC: H01L21/00

CPC classification number: G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract translation: 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。