摘要:
The polarizing film of the present invention contains the azo compound represented by the following general formula (I). In the general formula (I), Q represents a substituted or unsubstituted aryl group, X represents a cationic group, a nitro group, a cyano group, or a hydroxyl group, and M represents a counter ion.
摘要:
Provided is a method including: a step A of extruding a mixture containing a polytetrafluoroethylene (PTFE) fine powder having a standard specific gravity (SSG) of 2.19 or less and a liquid lubricant into a sheet using a flat die so as to obtain a PTFE sheet; a step B of rolling the PTFE sheet by passing the sheet between a pair of rolls in a longitudinal direction of the sheet; a step C of stretching the rolled PTFE sheet in a transverse direction of the sheet; a step D of removing the liquid lubricant from the PTFE sheet; and a step E of stretching the PTFE sheet, from which the liquid lubricant has been removed, both in the longitudinal direction of the sheet and in the transverse direction of the sheet, for example, at an area stretch ratio of 150 to 700, so as to make the sheet porous. According to this production method, it is possible to increase the PF value of the porous PTFE membrane.
摘要:
A Bi.CMOS semiconductor memory device is provided which includes an arrangement to simultaneously select a plurality of memory cells, followed by using a 3 bit Z addressing arrangement to determine a read or write operation for the simultaneously selected memory cells. To speed up the word line selection, a static selection type operation is used with the word line selecting voltage being greater than signal amplitude of the data lines during the write operation. Also, to speed up the read operation, separate common I/O lines are provided for the read and write operations. Read signals are transmitted as current signals, and then converted to voltage signals for improving reading speed. Also, improved arrangements are provided for resistance structure, logic circuitry, input circuitry, fuse cutting circuitry, drive circuitry, power circuitry, electrostatic protection circuitry, layout structure and testing methods for the semiconductor device.
摘要:
A semiconductor integrated circuit device constituted by a plurality of sets each of which having a pair of memory mats and each memory mat having a plurality of memory cells arranged in a matrix and a sense amplifier, I/O lines for transmitting signals provided by the sense amplifiers, selecting circuitry for selecting either a condition for sending out the signals provided by the sense amplifiers on the I/O lines or a condition for not sending out the same on the I/O lines, and Y-selection lines for transmitting the selection signals. A decoder connected with selection is disposed substantially at the middle of the Y-selection lines. X- and Y-address buffers are disposed close to each other nearer to the center of the chip than X- and Y-redundant circuits. A reference voltage generating circuit is disposed nearer to the edge of the chip than an output buffer circuit. A relief selecting circuit of each memory mat is formed adjacent to a redundant line selecting circuits included in the same memory mat. At least some of wiring lines connected to each sense amplifier are formed in a wiring layer in which Y-selection lines are formed. The Y-selection lines are extended in gaps between the sense amplifiers.
摘要:
Provided is a porous polytetrafluoroethylene (PTFE) membrane that satisfies the following expressions: 0.2≦F≦4.0; 0.2≦R≦1.0; and R≧−0.1F+0.5, for the Frazier number F [cm3/sec/cm2] and the water entry pressure R [MPa]. This porous PTFE membrane may be a single-layer membrane. This porous PTFE membrane has the properties suitable for use as a waterproof air-permeable membrane, and achieves a good balance between high water resistance and high air permeability.
摘要:
The polarizing film of the present invention contains the azo compound represented by the following general formula (I). In the general formula (I), Q represents a substituted or unsubstituted aryl group, X represents a cationic group, a nitro group, a cyano group, or a hydroxyl group, and M represents a counter ion.
摘要:
This invention relates to an encapsulated pharmaceutical dosage form comprising a practically insoluble compound or salt and an intracapsular fluid, and/or a surfactant and/or cellulose derivative. It provides for increased oral absorption as compared with the conventional system because, on release of capsule contents from the capsule shell, the practically insoluble compound or salt undergoes diminution in crystal size.
摘要:
A voltage conversion circuit of the present invention is equipped with means for generating a first voltage stabilized with respect to ground potential of a semiconductor integrated circuit device including the circuit, means for generating second voltage stabilized with respect to an external supply voltage of the semiconductor integrated circuit device, and selection means for selecting either the first voltage or the second voltage. The first voltage age, stabilized with respect to the ground potential, is selected and used as the voltage at the time of normal operation, and the second voltage, stabilized with respect to the external supply voltage, is selected and used at the time of aging test. In this case, means for trimming the first voltage and/or the second voltage is, preferably, provided to raise the voltage accuracy.
摘要:
A liquid-crystal coating fluid which comprises: an azo compound represented by the following general formula (1); and a solvent to dissolve the azo compound: wherein Q1 is an aryl group which may have any substituent group; Q2 is an arylene group which may have any substituent group; R is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, an acetyl group, a benzoyl group, or a phenyl group which may have any substituent group; and M is a counter ion.