摘要:
A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.
摘要:
A nonvolatile memory apparatus including a control circuit, plural terminals having clock, command and other terminals, data and command registers, and plural nonvolatile memory cells. The clock terminal receives a clock signal and the command terminal receives commands including read and program commands. The data register receives from and outputs data to outside. The control circuit reads operation steps from memory used to control the apparatus. The control circuit, responsive to the read command, controls reading data from the memory cells, storing read data to the data register, and outputting read data via the other terminal, not the command terminal, based on the clock signal. The control circuit, responsive to the program command, controls receiving data via the other terminal, not the command terminal, based on the clock signal, storing received data to the data register and writing received data to the memory cells.
摘要:
A nonvolatile memory apparatus including a control circuit, plural terminals having clock, command and other terminals, data and command registers, and plural nonvolatile memory cells. The clock terminal receives a clock signal and the command terminal receives commands including read and program commands. The data register receives from and outputs data to outside. The control circuit reads operation steps from memory used to control the apparatus. The control circuit, responsive to the read command, controls reading data from the memory cells, storing read data to the data register, and outputting read data via the other terminal, not the command terminal, based on the clock signal. The control circuit, responsive to the program command, controls receiving data via the other terminal, not the command terminal, based on the clock signal, storing received data to the data register and writing received data to the memory cells.
摘要:
A nonvolatile memory apparatus including a control circuit, plural terminals having clock, command and other terminals, data and command registers, and plural nonvolatile memory cells. The clock terminal receives a clock signal and the command terminal receives commands including read and program commands. The data register receives from and outputs data to outside. The control circuit reads operation steps from memory used to control the apparatus. The control circuit, responsive to the read command, controls reading data from the memory cells, storing read data to the data register, and outputting read data via the other terminal, not the command terminal, based on the clock signal. The control circuit, responsive to the program command, controls receiving data via the other terminal, not the command terminal, based on the clock signal, storing received data to the data register and writing received data to the memory cells.
摘要:
A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.
摘要:
A nonvolatile memory apparatus which includes a control circuit, plural terminals including a clock, command and other terminals, a converter circuit, and plural of nonvolatile memory cells. The clock terminal receives a clock signal, the command terminal receives commands including a read and program commands, and the control circuit reads out operation steps from a program memory to be executed to control an operation of the received command. In an operation in response to the read command, the control circuit controls reading data in parallel from ones of the nonvolatile memory cells, converting parallel type data to serial type data by the converter circuit, and serially outputting data via the other terminal except the command terminal in response to the clock signal. In an operation in response to the program, the control circuit controls serially receiving data via the other terminal except the command terminal in response to the clock signal, converting serial type data to parallel type data by the converter circuit, and writing data in parallel to ones of the nonvolatile memory cells.
摘要:
A nonvolatile memory apparatus including plural terminals having clock, command and other terminals, a clock generator, and plural nonvolatile memory cells. The clock and command terminals respectively receive a first clock signal and commands having read and program commands. The clock generator generates a second clock signal. In response to the read command, the apparatus reads data from the memory cells, and outputs data to outside of the apparatus in response to the first clock signal via the other terminal except the command terminal. In response to the program command, the apparatus receives data from outside of the apparatus in response to the first clock signal via the other terminal except the command terminal and writes data to the memory cells. The data writing to the memory cells is performed using the second clock signal.
摘要:
A nonvolatile memory apparatus including plural terminals having clock, command and other terminals, plural nonvolatile memory cells, and first and second volatile memories. The clock and command terminals receive respectively a first clock signal and commands including read and program commands. In response to the read command, the apparatus reads data from the memory cells, stores read data to the second volatile memory, transfers the data to the first volatile memory, and outputs the data to outside via the other terminal not the command terminal based on the first clock signal. In response to the program command, the apparatus receives data from outside via the other terminal not the command terminal based on the first clock signal, stores the received data to the first volatile memory, transfers the data to the second volatile memory, and writes the data from the second volatile memory to the memory cells.
摘要:
A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.
摘要:
In order to eliminate erroneous reading of data by preventing noise which might otherwise be transmitted at the data reading time through parasitic capacitance in the data lines to other data lines, switches (Qt1 and Qt1′) are interposed between a sense amplifier (SA) for amplifying the potential of a data line (DL) and the data line, and the sense amplifier is fed with an operating voltage after the potential of the data line is transmitted to the sense amplifier, and the switch is turned off.