Method of manufacturing semiconductor device using heated conveyance member
    2.
    发明授权
    Method of manufacturing semiconductor device using heated conveyance member 有权
    使用加热传送部件制造半导体器件的方法

    公开(公告)号:US06673654B2

    公开(公告)日:2004-01-06

    申请号:US10087910

    申请日:2002-03-05

    CPC classification number: H01L21/67248 H01L21/67109

    Abstract: A semiconductor device is manufactured by an integrated circuit forming process, and a series of subsequent steps. In the series of steps, a protection tape 18 is adhered onto a first surface of a semiconductor substrate on which a plurality of semiconductor elements are formed, and the second surface of the semiconductor substrate is ground so that the semiconductor substrate has a desired thickness, the semiconductor substrate is then conveyed while controlling the temperature of the semiconductor substrate. The semiconductor substrate is then separated into a plurality of semiconductor elements. The occurrence of warping on the semiconductor substrate during conveyance of the semiconductor substrate is thus prevented.

    Abstract translation: 通过集成电路形成工艺制造半导体器件,以及一系列后续步骤。 在一系列步骤中,将保护带18粘接到其上形成有多个半导体元件的半导体衬底的第一表面上,并且半导体衬底的第二表面被研磨以使得半导体衬底具有期望的厚度, 然后在控制半导体衬底的温度的同时传送半导体衬底。 然后将半导体衬底分离成多个半导体元件。 因此防止了在半导体衬底的传送期间在半导体衬底上翘曲的发生。

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