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    Method of producing anti-corrosion member and anti-corrosion member
    2.
    发明授权
    Method of producing anti-corrosion member and anti-corrosion member 有权
    生产防腐蚀部件和防腐蚀部件的方法

    公开(公告)号：US06406799B1

    公开(公告)日：2002-06-18

    申请号：US09494987

    申请日：2000-01-31

    申请人： Yasufumi Aihara ,  Keiichiro Watanabe ,  Kiyoshi Araki

    发明人： Yasufumi Aihara ,  Keiichiro Watanabe ,  Kiyoshi Araki

    IPC分类号： B21D3900

    CPC分类号： C23C8/06 ,  C23C8/62 ,  Y10T428/12556

    摘要： A base member made of a metal in which aluminum is included, ceramics in which an aluminum element is included, or a composition member constructed by a metal in which aluminum and ceramics are included, is provided in a container in which a solid fluorine compound such as NaHF2 is filled. Then, the container is heated at a temperature higher than a decomposition temperature of the solid fluorine compound. After that, the base member is subjected to a heat treatment with the decomposed gas of the solid fluorine compound to form a fluoride layer on a surface of the base member. In this manner, it is possible to obtain an anti-corrosion member which shows a high corrosion property with respect to the corrosion gas of halogen series and its plasma, particularly with respect to chlorine gas and its plasma.

    摘要翻译： 在其中包含固体氟化合物的容器中设置由包含铝的金属制成的基材，包含铝元素的陶瓷或包含铝和陶瓷的金属构成的组合物构件 因为填充了NaHF2。 然后，在高于固体氟化合物的分解温度的温度下加热容器。 之后，用固体氟化合物的分解气体对基材进行热处理，在基材的表面形成氟化物层。 以这种方式，可以获得相对于卤素系列及其等离子体的腐蚀气体具有高腐蚀性的防腐蚀部件，特别是对于氯气及其等离子体。

    Electrically heated substrate with multiple ceramic parts each having different volume resitivities
    4.
    发明授权
    Electrically heated substrate with multiple ceramic parts each having different volume resitivities 有权
    具有多个陶瓷部件的电加热衬底，每个陶瓷部件具有不同的体积电阻率

    公开(公告)号：US06294771B2

    公开(公告)日：2001-09-25

    申请号：US09753481

    申请日：2001-01-03

    申请人： Yuji Katsuda ,  Kiyoshi Araki ,  Tsuneaki Ohashi

    发明人： Yuji Katsuda ,  Kiyoshi Araki ,  Tsuneaki Ohashi

    IPC分类号： H01L21205

    CPC分类号： H05B3/748 ,  H05B3/283 ,  H05B3/74 ,  Y10T29/49083

    摘要： A heater comprising a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part, wherein the substrate comprises a first ceramic material and the resistance control part comprises a second ceramic material which has higher volume resistivity than that of the first ceramics.

    摘要翻译： 一种加热器，包括具有用于处理在基板上被加热物质的加热面的基板，嵌入基板的加热元件和电阻控制部，其中，所述基板包括第一陶瓷材料，所述电阻控制部包括第二 具有比第一陶瓷体积电阻率高的陶瓷材料。

    Semiconductor supporting device
    6.
    发明授权
    Semiconductor supporting device 失效
    半导体支持装置

    公开(公告)号：US6051303A

    公开(公告)日：2000-04-18

    申请号：US122894

    申请日：1998-07-28

    申请人： Yuji Katsuda ,  Kiyoshi Araki ,  Tsuneaki Ohashi

    发明人： Yuji Katsuda ,  Kiyoshi Araki ,  Tsuneaki Ohashi

    IPC分类号： B23Q3/15 ,  C04B35/581 ,  G03F7/20 ,  H01L21/683 ,  H02N13/00 ,  B32B3/24 ,  B32B9/00

    CPC分类号： G03F7/70691 ,  H01L21/6831 ,  Y10T279/23 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/24339 ,  Y10T428/24347

    摘要： A semiconductor-supporting device comprising a substrate made of an aluminum nitride-based ceramic material and having a semiconductor-placing surface, wherein an orientation degree of the aluminum nitride-based ceramic material specified by the following formula is not less than 1.1 and not more than 2.0.Orientation degree=[I'(002)/I'(100)]/[I(002)/I(100)]in which in an X-ray diffraction measurement, I'(002) is a diffraction intensity of a (002) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I'(100) is a diffraction intensity of a (100) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I(002) is a diffraction intensity of the (002) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133, and I(100) is a diffraction intensity of the (100) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133.

    摘要翻译： 一种半导体支撑装置，包括由氮化铝基陶瓷材料制成并具有半导体放置表面的衬底，其中由下式确定的氮化铝基陶瓷材料的取向度不小于1.1，而不是更大 在其中在X射线衍射测量中，I'（002）是衍射强度（I）（002）/ I'（100）] / [I（002）/ I（100） 当从半导体放置表面照射X射线时，氮化铝基陶瓷材料的（002）面的I'（100）是氮化铝基陶瓷材料的（100）面的衍射强度 当从半导体放置面照射X射线时，I（002）是根据JCPDS卡号25-1133的氮化铝陶瓷的（002）面的衍射强度，I（100）是 根据JCPDS卡号25-1133的氮化铝陶瓷的（100）面的衍射强度。

    Quantum effect device, method of manufacturing the same
    8.
    发明授权
    Quantum effect device, method of manufacturing the same 失效
    量子效应器件，制造方法

    公开(公告)号：US5972744A

    公开(公告)日：1999-10-26

    申请号：US37016

    申请日：1998-03-09

    申请人： Kiyoshi Morimoto ,  Kiyoyuki Morita ,  Kiyoshi Araki ,  Yoshihiko Hirai ,  Koichiro Yuki

    发明人： Kiyoshi Morimoto ,  Kiyoyuki Morita ,  Kiyoshi Araki ,  Yoshihiko Hirai ,  Koichiro Yuki

    IPC分类号： H01L21/335 ,  H01L29/775 ,  H01L21/70

    CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L29/66439

    摘要： A silicon island portion is formed in a quantum wire so as to be sandwiched between a pair of tunnel barrier portions of a silicon oxide film. On one side of the silicon island portion, a gate electrode for potential control is disposed with a gate insulating film of a silicon oxide film interposed therebetween. On the other side of the silicon island portion, a control electrode for potential control is disposed with an insulating film of a silicon oxide film interposed therebetween. Each of the tunnel barrier portions has a quantum wire constriction structure, which is formed by oxidizing a quantum wire, i.e., a silicon oxide film formed as a field enhanced oxide film with an atomic force microscope or the like, from its surface to a substantially center portion in its section.

    摘要翻译： 硅岛部分形成在量子线中，以夹在氧化硅膜的一对隧道势垒部分之间。 在硅岛部分的一侧，用于电位控制的栅电极设置有介于其间的氧化硅膜的栅极绝缘膜。 在硅岛部分的另一侧，用于电位控制的控制电极设置有隔着氧化硅膜的绝缘膜。 每个隧道势垒部分具有量子线收缩结构，该量子线收缩结构通过使用原子力显微镜等将形成为场增强氧化物膜的量子线，即其表面氧化成基本上 中心部分在其部分。

    Gap control apparatus and method utilizing heterodyne signal phase difference detection
    9.
    发明授权
    Gap control apparatus and method utilizing heterodyne signal phase difference detection 失效
    利用外差信号相位差检测的间隙控制装置和方法

    公开(公告)号：US5355219A

    公开(公告)日：1994-10-11

    申请号：US168140

    申请日：1993-12-17

    申请人： Kiyoshi Araki ,  Juro Yasui

    发明人： Kiyoshi Araki ,  Juro Yasui

    IPC分类号： G03F7/20 ,  G01B11/14 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G01B9/02

    CPC分类号： G03F9/70 ,  G01B11/14

    摘要： Two diffraction gratings having the same grate pitch are respectively attached to a semiconductor wafer and a mask to be used in lithography in production of a semiconductor, such that the diffraction gratings are parallel to each other. When first and second frequency lights respectively having different frequencies, are incident, through a light path adjusting system, upon the mask- and wafer-side diffraction gratings in the directions of the first order diffraction angles symmetric with respect to normal-line directions of the diffraction gratings, the frequency lights first orderly diffracted by the diffraction gratings, interfere with each other, thus forming mask- and wafer-side interference lights. An initial phase difference .DELTA..phi.0 between the interference lights, is detected. Then, the light path adjusting system is adjusted to shift the interference lights by the same angle .theta.1 in the same direction, and a later phase difference .DELTA..phi.1 between the interference lights thus shifted, is detected. Based on the relation of .DELTA..phi.1-.DELTA..phi.0=(2.pi.Gtan .theta.1)/(P/2), a mask-wafer gap G is detected with high precision according to the change in phase difference (.DELTA..phi. 1-.DELTA..phi.0). This improves the precision of setting the gap G in a semiconductor production.

    摘要翻译： 具有相同格栅间距的两个衍射光栅分别连接到半导体生产中用于光刻的半导体晶片和掩模，使得衍射光栅彼此平行。 当分别具有不同频率的第一和第二频率灯通过光路调节系统入射到掩模和晶片侧衍射光栅沿着相对于正交线方向对称的一阶衍射角的方向 衍射光栅，由衍射光栅首先被有序衍射的频率光彼此干涉，从而形成掩模和晶片侧干涉光。 检测到干扰光之间的初始相位差DELTA phi 0。 然后，调整光路调整系统以使干涉光沿相同的方向移动相同的角度θ1，并且检测由此偏移的干涉光之间的稍后的相位差DELTA phi 1。 根据DELTA phi 1-DELTA phi 0 =（2πGtanθ1）/（P / 2）的关系，根据相位差的变化（DELTA phi-1），以高精度检测掩模晶片间隙G， DELTA phi 0）。 这提高了在半导体制造中设置间隙G的精度。

    X-ray mask and process comprising convex-concave alignment mark with alignment reflection film
    10.
    发明授权
    X-ray mask and process comprising convex-concave alignment mark with alignment reflection film 失效
    X射线掩模和包括具有对准反射膜的凸凹对准标记的工艺

    公开(公告)号：US5334466A

    公开(公告)日：1994-08-02

    申请号：US963900

    申请日：1992-10-20

    申请人： Juro Yasui ,  Kiyoshi Araki

    发明人： Juro Yasui ,  Kiyoshi Araki

    IPC分类号： G03F1/22 ,  G03F9/00

    CPC分类号： G03F1/22 ,  G03F9/00 ,  G03F9/70

    摘要： An X-ray transmission film 2 of a SiN film is formed on the surface of a mask base 1. Formed on the surface of the X-ray transmission film 2 are an LSI pattern 3, and an alignment mark 4 composed of a convex portion 4a and a concave portion 4b. On the surface of the convex portion 4a is an alignment light reflection grating pattern 5 of a tungsten film. Formed on the surface of the concave portion 4b is a metal film 7 of a tungsten film.With this arrangement, a laser light beam 13 does not reach a semiconductor substrate 30 through the alignment mark 4. Thus, when detecting a first-order reflection diffracted light beam 14 from the alignment mark 4 by means of a photodetector, there is no inclusion of unwanted reflected light beams from the semiconductor substrate 30.

    摘要翻译： 在掩模基板1的表面上形成SiN膜的X射线透射膜2.在X射线透射膜2的表面上形成有LSI图案3和由凸部形成的对准标记4 4a和凹部4b。 凸部4a的表面是钨膜的取向光反射光栅图案5。 在凹部4b的表面上形成有钨膜的金属膜7。 通过这种布置，激光束13不通过对准标记4到达半导体基板30.因此，当通过光电检测器从对准标记4检测到一级反射衍射光束14时，不存在包含 来自半导体衬底30的不需要的反射光束。