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    Scanning method and system using 2-D ion implanter
    1.
    发明授权
    Scanning method and system using 2-D ion implanter 有权
    2-D离子注入机的扫描方法和系统

    公开(公告)号：US08294124B2

    公开(公告)日：2012-10-23

    申请号：US12688086

    申请日：2010-01-15

    Applicant: Keung Hui ,  Chun-Lin Chang

    Inventor： Keung Hui ,  Chun-Lin Chang

    IPC: G21K5/08 ,  G21K5/10 ,  G21K5/04 ,  H01L21/68

    CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/20228

    Abstract: An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer.

    Abstract translation: 离子注入机系统具有用于保持半导体晶片的可移动晶片支撑件和在晶片移动时产生用于在半导体晶片中注入离子的光束的光束源。 识别多个路径段，晶片支撑件将通过该路径段移动以将半导体晶片暴露于离子束。 针对多个路径段中的每一个识别第一位置和第二位置，使得当晶片处于每个第一位置和每个第二位置时，投影在晶片平面中的光束的周边是切线的 到晶片的周边。 离子注入器被配置为沿着每个相应的路径段上的相应的第一位置自动地移动晶片沿着多个路径段中的每一个，并且在相同的段上的相应的第二位置处停止，以将晶片暴露于 用于在晶片中注入离子的光束。

    Chemical mechanical polish process control for improvement in within-wafer thickness uniformity
    3.
    发明授权
    Chemical mechanical polish process control for improvement in within-wafer thickness uniformity 有权
    化学机械抛光过程控制，以提高晶片内厚度均匀性

    公开(公告)号：US08129279B2

    公开(公告)日：2012-03-06

    申请号：US12250239

    申请日：2008-10-13

    Applicant: Shen-Nan Lee ,  Ying-Mei Lin ,  Yu-Jen Cheng ,  Keung Hui ,  Huan-Just Lin

    Inventor： Shen-Nan Lee ,  Ying-Mei Lin ,  Yu-Jen Cheng ,  Keung Hui ,  Huan-Just Lin

    IPC: H01L21/302

    CPC classification number: B24B37/013 ,  B24B49/12

    Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.

    Abstract translation: 在晶片上进行化学机械抛光（CMP）工艺的方法包括提供晶片; 确定晶片表面上的特征的厚度分布; 并且在确定厚度分布的步骤之后，使用抛光配方对特征进行高速率CMP处理，以基本上实现特征的晶片内厚度均匀性。 根据厚度分布确定抛光配方。

    System and Method of Dosage Profile Control
    4.
    发明申请
    System and Method of Dosage Profile Control 有权
    剂量分布控制系统与方法

    公开(公告)号：US20120009692A1

    公开(公告)日：2012-01-12

    申请号：US12831699

    申请日：2010-07-07

    Applicant: Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

    Inventor： Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

    IPC: H01L21/66 ,  H01J37/317 ,  H01J37/20

    CPC classification number: C23C14/48 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30461 ,  H01J2237/31703 ,  H01L21/265 ,  H01L22/14

    Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.

    Abstract translation: 公开了一种用于控制剂量分布的系统和方法。 一个实施例包括将晶片分离成网格阵列的组件，并且基于测试来分配每个网格组件所需的剂量分布，以补偿晶片的不同区域之间的拓扑差异。 期望的剂量被分解为定向剂量组分，并且定向剂量组分转化成用于离子注入机的离子束的扫描速度。 速度可以被馈送到离子注入机中以控制晶片到光束的速度，从而控制注入。

    System and method of dosage profile control
    5.
    发明授权
    System and method of dosage profile control 有权
    剂量分布控制系统和方法

    公开(公告)号：US08309444B2

    公开(公告)日：2012-11-13

    申请号：US12831699

    申请日：2010-07-07

    Applicant: Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

    Inventor： Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

    IPC: H01L21/425

    CPC classification number: C23C14/48 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30461 ,  H01J2237/31703 ,  H01L21/265 ,  H01L22/14

    Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.

    Abstract translation: 公开了一种用于控制剂量分布的系统和方法。 一个实施例包括将晶片分离成网格阵列的组件，并且基于测试来分配每个网格组件所需的剂量分布，以补偿晶片的不同区域之间的拓扑差异。 期望的剂量被分解为定向剂量组分，并且定向剂量组分转化成用于离子注入机的离子束的扫描速度。 速度可以被馈送到离子注入机中以控制晶片到光束的速度，从而控制注入。

    SCANNING METHOD AND SYSTEM USING 2-D ION IIMPLANTER
    8.
    发明申请
    SCANNING METHOD AND SYSTEM USING 2-D ION IIMPLANTER 有权
    扫描方法和使用二维离子印迹的系统

    公开(公告)号：US20110174991A1

    公开(公告)日：2011-07-21

    申请号：US12688086

    申请日：2010-01-15

    Applicant: Keung HUI ,  Chun-Lin CHANG

    Inventor： Keung HUI ,  Chun-Lin CHANG

    IPC: G21K5/10 ,  H01L21/68 ,  G21K5/08 ,  G21K5/04

    CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/20228

    Abstract: An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer.

    Abstract translation: 离子注入机系统具有用于保持半导体晶片的可移动晶片支撑件和在晶片移动时产生用于在半导体晶片中注入离子的光束的光束源。 识别多个路径段，晶片支撑件将通过该路径段移动以将半导体晶片暴露于离子束。 针对多个路径段中的每一个识别第一位置和第二位置，使得当晶片处于每个第一位置和每个第二位置时，投影在晶片平面中的光束的周边是切线的 到晶片的周边。 离子注入机被配置为沿着每个相应路径段上的相应第一位置自动地移动晶片沿着多个路径段中的每一个，并且在相同的段上的相应的第二位置处停止，以将晶片暴露于 用于在晶片中注入离子的光束。

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