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    Apparatuses for atomic layer deposition
    2.
    发明授权
    Apparatuses for atomic layer deposition 有权
    用于原子层沉积的装置

    公开(公告)号：US08343279B2

    公开(公告)日：2013-01-01

    申请号：US11127753

    申请日：2005-05-12

    申请人： Nyi Oo Myo ,  Kenric Choi ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig R. Metzner ,  Paul Deaten

    发明人： Nyi Oo Myo ,  Kenric Choi ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig R. Metzner ,  Paul Deaten

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

    摘要： Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

    摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积材料的设备和方法。 在一个实施例中，腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。 腔室还包括至少一个管道，其连接到膨胀通道内的气体入口并且定位成提供在圆形方向（例如涡流，螺旋，螺旋或其衍生物）上的气流通过膨胀通道。 膨胀通道可以直接形成在室盖内，或者形成在其内附着的漏斗衬套中。 腔室可以包含保持环，上加工衬套，下工艺衬垫或滑阀衬套。 衬里通常具有抛光表面光洁度并且包含绝热材料，例如熔融石英或陶瓷。 在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

    Gas heater
    3.
    发明授权
    Gas heater 有权
    燃气加热器

    公开(公告)号：US08309874B2

    公开(公告)日：2012-11-13

    申请号：US12122616

    申请日：2008-05-16

    申请人： Tao Hou ,  Son T. Nguyen ,  Kenric Choi ,  Anh N. Nguyen

    发明人： Tao Hou ,  Son T. Nguyen ,  Kenric Choi ,  Anh N. Nguyen

    IPC分类号： H05B1/00

    CPC分类号： F28F7/02

    摘要： A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.

    摘要翻译： 一种用于加热或冷却流体的方法和装置。 连接到多个分配喷嘴的入口导管，与设备外围的通道流体连通。 插入件和套筒协同地限定与流体流体连通的薄间隙，流体流过该间隙。 在薄间隙附近的热插入物通过出口管道流出或流出流体。

    Reactant Delivery System For ALD/CVD Processes
    4.
    发明申请
    Reactant Delivery System For ALD/CVD Processes 审中-公开
    ALD / CVD工艺的反应物输送系统

    公开(公告)号：US20130019960A1

    公开(公告)日：2013-01-24

    申请号：US13554487

    申请日：2012-07-20

    申请人： Kenric Choi ,  Joseph Yudovsky ,  Steven D. Marcus ,  Ernesto Ulloa

    发明人： Kenric Choi ,  Joseph Yudovsky ,  Steven D. Marcus ,  Ernesto Ulloa

    IPC分类号： F16K49/00 ,  F16K11/00

    CPC分类号： C23C16/4408 ,  C23C16/4481 ,  Y10T137/6416 ,  Y10T137/86911

    摘要： Provided are apparatus and methods for generating a chemical precursor. The apparatus comprises an inlet line to be connected to an ampoule and an outlet line to be connected to an ampoule. The inlet line having an inlet valve to control the flow of a carrier gas into the ampoule and the outlet line has an outlet valve to control the flow exiting the ampoule. A bypass valve allows carrier gas to bypass the ampoule and purge the outlet valve without flowing gas into the ampoule.

    摘要翻译： 提供了用于产生化学前体的装置和方法。 该装置包括要连接到安瓿的入口管线和要连接到安瓿的出口管线。 入口管线具有用于控制载气进入安瓿和出口管线的入口阀，其具有出口阀以控制离开安瓿的流量。 旁通阀允许载气旁路安瓿并吹扫出口阀，而不会使气体流入安瓿。

    GAS HEATER
    5.
    发明申请
    GAS HEATER 有权
    气体加热器

    公开(公告)号：US20090283252A1

    公开(公告)日：2009-11-19

    申请号：US12122616

    申请日：2008-05-16

    申请人： Tao Hou ,  Son T. Nguyen ,  Kenric Choi ,  Anh N. Nguyen

    发明人： Tao Hou ,  Son T. Nguyen ,  Kenric Choi ,  Anh N. Nguyen

    IPC分类号： G05D23/00 ,  F28F1/10 ,  H05B1/00 ,  H05B1/02

    CPC分类号： F28F7/02

    摘要： A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.

    摘要翻译： 一种用于加热或冷却流体的方法和装置。 连接到多个分配喷嘴的入口导管，与设备外围的通道流体连通。 插入件和套筒协同地限定与流体流体连通的薄间隙，流体流过该间隙。 在薄间隙附近的热插入物通过出口管道流出或流出流体。

    Apparatus and Process for Atomic Layer Deposition
    6.
    发明申请
    Apparatus and Process for Atomic Layer Deposition 审中-公开
    原子层沉积的装置和工艺

    公开(公告)号：US20120135609A1

    公开(公告)日：2012-05-31

    申请号：US12956650

    申请日：2010-11-30

    申请人： Joseph Yudovsky ,  Tatsuya Sato ,  Kenric Choi ,  Anh N. Nguyen ,  Faruk Gungor

    发明人： Joseph Yudovsky ,  Tatsuya Sato ,  Kenric Choi ,  Anh N. Nguyen ,  Faruk Gungor

    IPC分类号： H01L21/30 ,  B67D7/06

    CPC分类号： C23C16/45565 ,  C23C16/45548 ,  C23C16/45574

    摘要： Provided are gas distribution plates (showerheads) for use in an apparatus configured to form a film during, for example, an atomic layer deposition (ALD) process. The gas distribution plate comprises a body defining a thickness and a peripheral edge and has a front surface for facing the substrate. The front surface has a central region with a plurality of openings configured to distribute process gases over the substrate and a focus ring with a sloped region. The focus ring is concentric to the central region such that the thickness at the focus ring is greater than the thickness at the central region.

    摘要翻译： 提供了用于在例如原子层沉积（ALD）工艺期间形成膜的装置中使用的气体分配板（喷头）。 气体分配板包括限定厚度和外围边缘的主体，并且具有面向基板的前表面。 前表面具有中心区域，其具有多个开口，其被配置成在衬底上分配工艺气体和具有倾斜区域的聚焦环。 聚焦环与中心区域同心，使得聚焦环处的厚度大于中心区域处的厚度。

    METHODS FOR DETERMINING THE QUANTITY OF PRECURSOR IN AN AMPOULE
    7.
    发明申请
    METHODS FOR DETERMINING THE QUANTITY OF PRECURSOR IN AN AMPOULE 审中-公开
    用于确定前置放大器数量的方法

    公开(公告)号：US20100305884A1

    公开(公告)日：2010-12-02

    申请号：US12781353

    申请日：2010-05-17

    申请人： Joseph Yudovsky ,  Jeffrey Tobin ,  Patricia M. Liu ,  Faruk Gungor ,  Tai T. Ngo ,  Travis Tesch ,  Kenric Choi

    发明人： Joseph Yudovsky ,  Jeffrey Tobin ,  Patricia M. Liu ,  Faruk Gungor ,  Tai T. Ngo ,  Travis Tesch ,  Kenric Choi

    IPC分类号： G01N7/00

    CPC分类号： C23C16/4481

    摘要： Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume.

    摘要翻译： 本文提供了确定安瓿中前体的量的方法。 在一些实施方案中，用于测定安瓿中的固体前体的量的方法可包括确定具有部分填充有固体前体的第一体积的安瓿中的第一压力; 将一定量的第一气体流入安瓿中以在安瓿中建立第二压力; 基于第一压力，第二压力和流入安瓿的第一气体的量之间的关系来确定第一容积的剩余部分; 并且基于第一体积和第一体积的剩余部分确定安瓿中的固体前体的量。