Memory cell array architecture for random access memory device
    2.
    发明授权
    Memory cell array architecture for random access memory device 有权
    用于随机存取存储器件的存储单元阵列架构

    公开(公告)号:US6097621A

    公开(公告)日:2000-08-01

    申请号:US302645

    申请日:1999-05-03

    申请人: Kazuya Mori

    发明人: Kazuya Mori

    摘要: A memory cell array architecture (300) for memory cells having a 6F.sup.2 area, where F is a minimum feature size, is disclosed. The array architecture (300) includes active areas (302a-302n) arranged into even columns and odd columns. The active areas (302a-302n) each include a central portion (306) and are separated from one another within a column by column spacing structures (308). The active areas of even columns are offset from those of odd columns so that the central portion the even column active areas are aligned, in the row direction, with the column spacing structures of the odd columns. This arrangement allows bit line contacts (312a-312g) to be formed at the central portions with less restrictive alignment constraints. Two storage node contacts (316a-316t) are also formed to each active area (302a-302n). A novel lithography mask for improved creation of the storage node contacts is also disclosed.

    摘要翻译: 公开了一种用于具有6F2区域的存储单元的存储单元阵列结构(300),其中F是最小特征尺寸。 阵列架构(300)包括排列成偶数列和奇数列的有效区域(302a-302n)。 活动区域(302a-302n)各自包括中心部分(306),并且在列间隔结构(308)内彼此分离。 偶数列的有效区域与奇数列的有效区域偏移,使得偶数列有效区域的中心部分在行方向上与奇数列的列间隔结构对准。 这种布置允许位线接触(312a-312g)形成在具有较少限制性对准限制的中央部分。 两个存储节点触点(316a-316t)也形成到每个有效区域(302a-302n)。 还公开了一种用于改善存储节点接触的创建的新型光刻掩模。

    Method of manufacturing a semiconductor device having multi-layered
wiring without hillocks at the insulating layers
    3.
    发明授权
    Method of manufacturing a semiconductor device having multi-layered wiring without hillocks at the insulating layers 失效
    制造具有没有小丘的多层布线的半导体器件的方法

    公开(公告)号:US5759912A

    公开(公告)日:1998-06-02

    申请号:US653904

    申请日:1996-05-28

    摘要: An Al alloy interconnection layer is deposited on a silicon oxide layer, and a first carbon layer is formed on the Al alloy interconnection layer. Then, the first carbon layer and the Al alloy interconnection layer are patterned, thereby forming a first interconnection layer consisting of the Al alloy interconnection layer and the first carbon layer. Sequentially, a second carbon layer is formed on the first interconnection layer and the silicon oxide layer. The second carbon layer is entirely etched by the RIE method, thereby leaving the second carbon layer only on side surfaces of the first interconnection layer. A high temperature layer made of SiO.sub.2 is deposited on the second carbon layer, the first interconnection layer and the silicon oxide layer. Thereafter, the high temperature layer is etched back until the first carbon layer is exposed, thus being flattened. An interlayer insulating layer is deposited on the high temperature layer and the first interconnection layer.

    摘要翻译: 在氧化硅层上沉积Al合金配线层,在Al合金配线层上形成第一碳层。 然后,对第一碳层和Al合金配线层进行构图,形成由Al合金配线层和第一碳层构成的第一配线层。 接下来,在第一互连层和氧化硅层上形成第二碳层。 通过RIE方法完全蚀刻第二碳层,从而仅在第一互连层的侧表面上留下第二碳层。 由SiO 2制成的高温层沉积在第二碳层,第一互连层和氧化硅层上。 此后,将高温层回蚀刻直到第一碳层露出,从而变平。 在高温层和第一互连层上沉积层间绝缘层。

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US08125553B2

    公开(公告)日:2012-02-28

    申请号:US12363090

    申请日:2009-01-30

    IPC分类号: H04N5/335

    摘要: An imaging apparatus is provided. The apparatus generally comprises an array and storage elements. The array includes photosensitive cells that are arranged in a plurality of columns and a plurality of rows such that each column includes a set of photosensitive cell pairs that have a shared region with a share floating diffusion region and a shared selection transistor. Also, the location of each shared region of each column is shifted by one row in each adjacent column.

    摘要翻译: 提供了一种成像装置。 该装置通常包括阵列和存储元件。 阵列包括布置在多列和多行中的光敏单元,使得每列包括具有共享浮动扩散区域的共享区域和共享选择晶体管的一组光敏单元对。 此外,每列的每个共享区域的位置在每个相邻列中移位一行。

    SOLID-STATE IMAGING DEVICE
    6.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号:US20090201405A1

    公开(公告)日:2009-08-13

    申请号:US12363090

    申请日:2009-01-30

    IPC分类号: H04N5/335

    摘要: An imaging apparatus is provided. The apparatus generally comprises an array and storage elements. The array includes photosensitive cells that are arranged in a plurality of columns and a plurality of rows such that each column includes a set of photosensitive cell pairs that have a shared region with a share floating diffusion region and a shared selection transistor. Also, the location of each shared region of each column is shifted by one row in each adjacent column.

    摘要翻译: 提供了一种成像装置。 该装置通常包括阵列和存储元件。 阵列包括布置在多列和多行中的光敏单元,使得每列包括具有共享浮动扩散区域的共享区域和共享选择晶体管的一组光敏单元对。 此外,每列的每个共享区域的位置在每个相邻列中移位一行。

    GENES FOR PROGNOSIS OF CANCER
    7.
    发明申请
    GENES FOR PROGNOSIS OF CANCER 审中-公开
    癌症预防基因

    公开(公告)号:US20090011423A1

    公开(公告)日:2009-01-08

    申请号:US12183610

    申请日:2008-07-31

    IPC分类号: C12Q1/68

    CPC分类号: C12Q1/6886 C12Q2600/158

    摘要: To provide a novel method for determining the risk of lymph node metastasis of breast cancer uses as an index the difference in the expression levels of marker genes between metastatic breast cancer tissue (or cell) and non-metastatic breast cancer tissue (or cell). The method involves (1) measuring the expression level of a gene having a base sequence in human metastatic breast cancer tissue (or cell), (2) measuring the expression level of the same gene in human non-metastatic breast cancer tissue (or cell), and (3) comparing the expression level of (1) with the expression level of (2) and determine the risk of lymph node metastasis of breast cancer based on the difference between the expression levels.

    摘要翻译: 提供一种确定乳腺癌淋巴结转移风险的新方法作为转移性乳腺癌组织(或细胞)与非转移性乳腺癌组织(或细胞)之间标记基因表达水平差异的指标。 该方法包括(1)测量人转移性乳腺癌组织(或细胞)中具有碱基序列的基因的表达水平,(2)测量人非转移性乳腺癌组织(或细胞)中相同基因的表达水平 )和(3)比较(1)的表达水平与(2)的表达水平,并根据表达水平之间的差异确定乳腺癌淋巴结转移的风险。

    Quinazoline derivatives and drugs
    9.
    发明授权
    Quinazoline derivatives and drugs 失效
    喹唑啉衍生物和药物

    公开(公告)号:US07220751B2

    公开(公告)日:2007-05-22

    申请号:US10399803

    申请日:2001-11-01

    CPC分类号: C07D401/06 C07D239/94

    摘要: The invention provides an excellent novel analgesic which acts on a nociceptin receptor to exhibit a wide range of the analgesic effect for example on a chronic pain as well as an allodynia accompanied with a herpes zoster.The invention relates to a nociceptin receptor agonist comprising as an active ingredient a compound represented by Formula (I) or a salt thereof: wherein R1 represents a hydrogen atom or alkyl; A1 and A2 are the same or different and each represents a single bond or a divalent aliphatic hydrocarbon group; Q represents a single bond, cycloalkylene group, phenylene group or a divalent heterocyclic group; R2A and R2B are the same or different and each represents a hydrogen atom or alkyl; R3 represents an optionally substituted phenyl group or heterocyclic group; R4 and R5 are the same or different and each represents a hydrogen atom, alkyl, alkoxy, aralkyloxy, halogen, nitro, hydroxy, alkoxycarbonyl, —NR6R7 and the like.

    摘要翻译: 本发明提供了一种优异的新颖止痛剂,其作用于伤害感受肽受体以表现出广泛的止痛效果,例如慢性疼痛以及伴随带状疱疹的异常性疼痛。 本发明涉及一种伤害感受肽受体激动剂,其包含作为活性成分的由式(I)表示的化合物或其盐:其中R 1表示氢原子或烷基; A 1和A 2相同或不同,各自表示单键或二价脂族烃基; Q表示单键,亚环烷基,亚苯基或二价杂环基; R 2A和R 2B相同或不同,各自表示氢原子或烷基; R 3表示任选取代的苯基或杂环基; R 4和R 5相同或不同,各自表示氢原子,烷基,烷氧基,芳烷氧基,卤素,硝基,羟基,烷氧基羰基,-NR 6< 7>等等。