摘要:
There is provided a multilayer ceramic electronic component, including: a ceramic body including a dielectric layer and having first and third surfaces opposing each other in a length direction of the dielectric layer and second and fourth surfaces opposing each other in a width direction thereof; and a multilayer part including a first internal electrode and a second internal electrode disposed to oppose each other, while having the dielectric layer interposed there between in the ceramic body, and exposed to the first and third surfaces of the ceramic body, respectively; wherein one or more residual carbon removing path parts are formed to be protruded on both side of the first and second internal electrodes in a length direction of the ceramic body.
摘要:
Provided is a method for fabricating a semiconductor device. The method includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench; forming a high-k dielectric layer in the first trench; successively forming a diffusion layer and a blocking layer on the high-k dielectric layer; subsequently performing annealing; after the annealing, successively removing the blocking layer and the diffusion layer; forming a first barrier layer on the high-k dielectric layer; successively forming a work function adjustment layer and a gate conductor on the first barrier layer; and forming a capping layer on the gate conductor.
摘要:
A drum washing machine and washing method are provided. The washing machine directly sprays water to laundry inside the drum through a nozzle unit. The method includes passing some water through a detergent container and directly spraying some water to the inside of a drum through a nozzle unit such that a high concentration of detergent bubbles is generated while applying a force to the laundry. The washing machine includes a cabinet, a tub inside the cabinet, a drum inside the tub, a door on the cabinet, a diaphragm, and a nozzle unit installed so interference with the door is avoided and to receive water directly from an external source to spray water inside the drum during a washing cycle and a rinsing cycle. The nozzle unit adjusts water jetting according to a displacement of an actuator installed inside the nozzle unit.
摘要:
The present invention relates to TNFR2-IL21R fusion protein acting as a double-antagonist to TNF-alpha (α) and IL-21. The composition containing the double antagonist to TNF-α and Il-21 (TNFR2-IL21R fusion protein), known as major causes of autoimmune rheumatoid arthritis, one of autoimmune diseases, can reduce the secretion of inflammatory cytokine, increase the secretion of anti-inflammatory cytokine, and suppress the differentiation of osteoclasts better than single proteins such as TNFR2-Fc and IL21R-Fc. The TNFR2-IL21R fusion protein of the present invention has not only excellent treatment effect on arthritis in CIA mouse model not also excellent treatment effect on autoimmune rheumatoid arthritis by increasing the expression of Treg, the immune suppressive cells. Therefore, the TNFR2-IL21R fusion protein of the present invention can be effectively used as an active ingredient for the composition for the prevention and treatment of autoimmune disease.
摘要:
A semiconductor device includes a substrate including an NMOS region, a fin active region protruding from the substrate in the NMOS region, the fin active region including an upper surface and a sidewall, a gate dielectric layer on the upper surface and the sidewall of the fin active region, a first metal gate electrode on the gate dielectric layer, the first metal gate electrode having a first thickness at the upper surface of the fin active region and a second thickness at the sidewall of the fin active region, and a second metal gate electrode on the first metal gate electrode, the second metal gate electrode having a third thickness at the upper surface of the fin active region and a fourth thickness at the sidewall of the fin active region, wherein the third thickness is less than the fourth thickness.
摘要:
A message to be transmitted is converted into an image file. The image file is stored and location information about a location where the image file is stored, is generated. The image file is transmitted to at least one device based on the location information.
摘要:
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
摘要:
The present invention provides a hybrid composite sealant, as a sealing material for a planar type solid oxide fuel cell stack, having a matrix of a glass composition, wherein a surface layer reinforced with platelet reinforcement particles is laminated on either one or both surfaces of an inner layer reinforced with fibrous reinforcement particles. Accordingly, by applying the composite sealant of the present invention to the solid oxide fuel cell stack, excellent gas-tightness of the stack can be obtained even under low coupling pressure, thermal cycling durability can be enhanced due to low coupling strength with a contact surface of an object to be sealed, stack disassembly and maintenance can be facilitated when parts within the stack are disabled, and stack stability as well as stack performance can be maintained under a pressurized operation condition where pressure differentials between the inside and outside of the stack reach to 5 atmospheric pressures (0.5 MPa).
摘要:
Provided is a power generating apparatus using piezoelectric elements, which can increase an amount of electricity generated in the piezoelectric elements and can extend the life of the piezoelectric elements. The power generating apparatus includes: a plurality of piezoelectric elements; a main body in which the piezoelectric elements are received and fixed, with spaced apart from one another, so as to protect the piezoelectric elements; a piezoelectric element support reciprocatingly installed in the main body to support the piezoelectric elements such that the piezoelectric elements are deformed by a reciprocating motion of the piezoelectric element support; a driving unit provided in the main body to operate the piezoelectric element support; and a power transmission unit connecting the driving unit to the piezoelectric element support, such that the piezoelectric element support is reciprocated by a driving force of the driving unit.
摘要:
A flash memory cell stack includes a semiconductor substrate; a control electrode formed in a vertical pillar shape on a surface of the semiconductor substrate; an insulating film formed between the control electrode and the semiconductor substrate; a gate stack formed on a side surface of the control electrode; a plurality of first insulating films formed as layers on a side surface of the gate stack; a plurality of second doping semiconductor areas formed as layers on a side surface of the gate stack; and a first doping semiconductor area formed on a portion of side surfaces of the first insulating films and the second doping semiconductor areas and formed on side surfaces facing each other in a first direction. The first insulating films and the second doping semiconductor areas are alternately provided on the side surface of the gate stack.