公开(公告)号：US08679341B2

公开(公告)日：2014-03-25

申请号：US11919076

申请日：2006-05-08

申请人： Yousuke Miyashita ,  Hachiro Nakanishi ,  Hitoshi Kasai ,  Akito Masuhara

发明人： Yousuke Miyashita ,  Hachiro Nakanishi ,  Hitoshi Kasai ,  Akito Masuhara

IPC分类号： B01D11/02 ,  B01D17/02 ,  B01D17/025

CPC分类号： C09B67/0091 ,  B01D11/0288 ,  C09B67/0065

摘要： A method of concentrating nanoparticles, having the steps of: adding and mixing an extraction solvent with a nanoparticles-dispersion liquid that nanoparticles are dispersed in a dispersion solvent, thereby concentrating and extracting the nanoparticles into a phase of the extraction solvent, and removing the dispersion solvent by filter-filtrating a liquid of concentrated extract, in which the extraction solvent is substantially incompatible with the dispersion solvent, and the extract solvent can form an interface after the extraction solvent is mixed with the dispersion solvent and left the mixture still; further a method of deaggregating aggregated nanoparticles, having the steps of: applying two or more ultrasonic waves different in frequency to a liquid containing aggregated nanoparticles, and thereby fining and dispersing the aggregated nanoparticles.

摘要翻译： 一种浓缩纳米颗粒的方法，具有以下步骤：将提取溶剂与纳米颗粒分散在分散溶剂中的纳米颗粒分散液相加并混合，从而将纳米颗粒浓缩并萃取到萃取溶剂的相中，并除去分散体 溶剂，其中提取溶剂与分散溶剂基本上不相容，并且萃取溶剂可以在萃取溶剂与分散溶剂混合后形成界面，并将混合物静置; 进一步解聚聚集的纳米颗粒的方法，具有以下步骤：将不同频率的两个或更多个超声波施加到含有聚集的纳米颗粒的液体上，从而使聚集的纳米颗粒澄清和分散。

公开(公告)号：US20130096097A1

公开(公告)日：2013-04-18

申请号：US13702205

申请日：2011-06-07

申请人： Hitoshi Kasai ,  Hachiro Nakanishi ,  Koichi Baba ,  Hidetoshi Oikawa ,  Tastuya Murakami ,  Hiroshi Imahori ,  Misturu Hashida ,  Isamu Oh

发明人： Hitoshi Kasai ,  Hachiro Nakanishi ,  Koichi Baba ,  Hidetoshi Oikawa ,  Tastuya Murakami ,  Hiroshi Imahori ,  Misturu Hashida ,  Isamu Oh

IPC分类号： A61K9/10

CPC分类号： A61K9/10 ,  A61K9/5123 ,  A61K31/4745 ,  A61K31/573 ,  A61K47/55

摘要： [Problem] The purpose of the present invention is to provide organic particles containing pharmaceutical particles of which the particles are small and the particle size distribution is narrow, and a manufacturing method for the same.[Solution] Provided are pharmaceutical multimeric particles of which the particles are small and the particle size distribution is narrow and which are characterized in being obtained by pouring into water a solution of a pharmaceutical multimer dissolved in a water-miscible organic solvent, and a manufacturing method for the pharmaceutical multimeric particles. Pharmaceutical dimeric particles thereof are characterized in being obtained by pouring into water a solution of a compound represented by general formula (I) dissolved in a water-miscible organic solvent.

摘要翻译： 本发明的目的是提供含有粒子小，粒径分布狭窄的药物粒子的有机粒子及其制造方法。 [解决方案]提供了颗粒小且粒度分布窄的药物多聚体颗粒，其特征在于通过将溶解在水混溶性有机溶剂中的药物多聚体的溶液倒入水中而获得， 药物多聚体颗粒的方法。 其特征在于通过将溶解在与水可混溶的有机溶剂中的通式（I）表示的化合物的溶液倒入水中而获得的药物二聚体颗粒。

公开(公告)号：US08404569B2

公开(公告)日：2013-03-26

申请号：US12949268

申请日：2010-11-18

申请人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

发明人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

IPC分类号： H01L21/00

CPC分类号： H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

公开(公告)号：US20100032644A1

公开(公告)日：2010-02-11

申请号：US12307586

申请日：2008-03-28

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32

摘要： An active layer (17) is provided so as to emit light having an emission wavelength in the 440 nm to 550 nm band. A first-conductivity-type gallium nitride semiconductor region (13), the active layer (17), and a second-conductivity-type gallium nitride semiconductor region (15) are arranged along a predetermined axis (Ax). The active layer (17) includes a well layer composed of hexagonal InxGa1-xN (0.16≦x≦0.4, x: strained composition), with the indium fraction x represented by the strained composition. The m-plane of the hexagonal InxGa1-xN is oriented along the predetermined axis (Ax). The well-layer thickness is between greater than 3 nm and less than or equal to 20 nm. Having the well-layer thickness be over 3 nm makes it possible to fabricate light-emitting devices having an emission wavelength of over 440 nm.

摘要翻译： 提供有源层（17）以发射具有440nm至550nm波段的发射波长的光。 第一导电型氮化镓半导体区域（13），有源层（17）和第二导电型氮化镓半导体区域（15）沿预定轴线（Ax）布置。 活性层（17）包括由六方晶系In x Ga 1-x N（0.16 <= x <= 0.4，x：应变组成）构成的阱层，其中铟组分x由应变组合物表示。 六边形In x Ga 1-x N的m面沿预定轴线（Ax）取向。 阱层厚度大于3nm且小于或等于20nm。 具有超过3nm的阱层厚度使得可以制造发射波长超过440nm的发光器件。

公开(公告)号：US20060039984A1

公开(公告)日：2006-02-23

申请号：US10537497

申请日：2003-07-09

申请人： Hachiro Nakanishi ,  Hitoshi Kasai ,  Hirohiko Miura ,  Hidetoshi Oikawa ,  Shuji Okada

发明人： Hachiro Nakanishi ,  Hitoshi Kasai ,  Hirohiko Miura ,  Hidetoshi Oikawa ,  Shuji Okada

IPC分类号： A61K9/14 ,  B29B9/00

CPC分类号： C08J9/28 ,  C08J2201/0543 ,  C08J2201/0546 ,  C08J2379/08 ,  C08L79/08

摘要： A method for preparation of porous polyimide microparticles comprising, forming polyamide acid microparticles by pouring polymer solution prepared by dissolving polyamide acid containing 0.5 to 80 weight % of alkali metal salt to polyamide acid by 0.1 to 15 weight % concentration into a poor solvent selected from the group consisting of aliphatic solvents, alicyclic solvents, aromatic solvents, CS2 and mixture of two or more these solvents and the temperature of which is adjusted to the range from −20° C. to 60° C., wherein particle size of said polyamide acid microparticles is adjusted to 50 nm to 10000 nm by controlling the temperature of said poor solvent, pore size of said polyamide acid microparticles is adjusted to the range from 20 nm to 500 nm and porosity of said polyamide acid microparticles is adjusted to the range from 0.1% to 30% by controlling a content or a kind of said alkali metal salt, then treating said polyamide acid microparticles by chemical imidation or thermal imidation, or by thermal imidation after chemical imidation so that the particle size distribution, pore size and porosity of said polyamide acid microparticles can be maintained.

摘要翻译： 一种多孔聚酰亚胺微粒的制备方法，其特征在于，包括：将聚合物溶液倒入聚酰胺酸性微粒中形成聚酰胺酸微粒，所述聚合物溶液是将含有0.5〜80重量％的碱金属盐的聚酰胺酸溶解在0.1〜15重量％浓度的聚酰胺酸中， 由脂族溶剂，脂环族溶剂，芳族溶剂，CS 2和两种或更多种这些溶剂的混合物组成的组，其温度调节至-20℃至60℃。 通过控制所述不良溶剂的温度将所述聚酰胺酸微粒的粒径调整为50nm〜10000nm，将所述聚酰胺酸微粒的孔径调整为20nm〜500nm，将所述聚酰胺酸的孔隙率 通过控制所述碱金属盐的含量或种类将微粒调节至0.1％至30％的范围，然后通过化学酰亚胺化处理所述聚酰胺酸微粒 或热酰亚胺化，或通过化学酰亚胺化后的热酰亚胺化，使得可以维持所述聚酰胺酸微粒的粒度分布，孔径和孔隙率。

公开(公告)号：US4618043A

公开(公告)日：1986-10-21

申请号：US625203

申请日：1984-06-27

申请人： Toshihiro Hattori ,  Masaki Ishihara ,  Makoto Uriuhara ,  Hitoshi Kasai ,  Yasuyoshi Asagi

发明人： Toshihiro Hattori ,  Masaki Ishihara ,  Makoto Uriuhara ,  Hitoshi Kasai ,  Yasuyoshi Asagi

IPC分类号： F02D29/00 ,  B60K23/02 ,  B60K26/02 ,  B60W10/02 ,  B60W10/04 ,  B60W10/06 ,  B60W50/00 ,  F16D23/12 ,  F16D48/02 ,  F16D48/06 ,  F16H59/16 ,  F16H59/18 ,  F16H59/42 ,  F16H59/68 ,  F16H61/02 ,  F16H61/18 ,  F16H63/50 ,  B60K41/02

CPC分类号： B60W10/06 ,  B60W10/02 ,  B60W10/04 ,  B60W30/18 ,  B60W30/1819 ,  B60W2050/0045 ,  B60W2510/0225 ,  B60W2510/0638 ,  B60W2510/1005 ,  B60W2510/104 ,  B60W2540/10 ,  B60W2540/12 ,  B60W2710/023 ,  B60W2710/0605 ,  Y10T477/6424

摘要： An electronic control method for vehicles, wherein, when exercising control to start a vehicle from rest, the vehicle engine and clutch are controlled in a very low speed control mode, if the amount by which an accelerator pedal is depressed is less than a set value. If, however, the amount of accelerator pedal depression is greater than the set value, the engine and clutch are controlled in an ordinary start control mode. When the vehicle is travelling and the speed thereof is less than a set value, the clutch is controlled in a start control mode. When the travelling speed of the vehicle is greater than the set value, the clutch is controlled in a shift mode.

摘要翻译： 一种用于车辆的电子控制方法，其中，当进行停止起动车辆的控制时，如果加速踏板被压下的量小于设定值，则以非常低的速度控制模式控制车辆发动机和离合器 。 然而，如果加速器踏板踩踏量大于设定值，则以普通起动控制模式控制发动机和离合器。 当车辆行驶并且其速度小于设定值时，离合器被控制在起动控制模式。 当车辆的行驶速度大于设定值时，离合器被控制在换档模式。

公开(公告)号：US07973322B2

公开(公告)日：2011-07-05

申请号：US12440643

申请日：2008-04-17

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

公开(公告)号：US07968864B2

公开(公告)日：2011-06-28

申请号：US12390036

申请日：2009-02-20

申请人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

发明人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≦X

摘要翻译： 提供III族氮化物发光器件。 具有量子阱结构的有源层在氮化镓基半导体区域的基底面上生长。 量子阱结构形成为具有410nm以上的发光峰值波长。 阱层的厚度为4nm以上，10nm以下。 阱层由InXGa1-XN（0.15＆nlE; X <1，其中X是应变组成）组成。 氮化镓基半导体区域的基面相对于六边形系统的{0001}面或{000-1}面以15度以上且85度以下的倾斜角度倾斜 III族氮化物。 该范围内的基面是半极性平面。

公开(公告)号：US20100059759A1

公开(公告)日：2010-03-11

申请号：US12440643

申请日：2008-04-17

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

公开(公告)号：US07589000B2

公开(公告)日：2009-09-15

申请号：US11643675

申请日：2006-12-22

申请人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

发明人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

IPC分类号： H01L21/00

CPC分类号： H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。 因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。